Abstract
Carbon impurity contamination during growth of crystalline silicon has been systematically studied in a representative unidirectional furnace. Mechanism of carbon incorporation into silicon has been illuminated. To better understand the carbon contamination process, a global simulation in a unidirectional solidification furnace was implemented. The effects of flow rate and pressure on impurities were examined.
To reduce carbon contamination, an improved unidirectional solidification furnace with a crucible cover was designed. Results show that this improvement enables the production of a high-purity multicrystalline silicon crystal in a unidirectional solidification furnace. In addition, the material of crucible cover has a great influence on carbon contamination. Another possible contamination mechanism due to the reaction between silica crucible and the graphite susceptor has also been given. Results show that the crucible reaction with graphite susceptor has a marked effect on carbon impurity in the crystal.
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References
J.A. Baker, Semiconductor Silicon 1969, ed. by R.R. Haberecht, E.L. Kern (Electrochemical Society, New York, 1969)
J. Bauer, O. Breitenstein, J. P. Rakotoniaina, in Proceedings of 21st EUPVSEC, Dresden, 2006, p. 1115
D.E. Bornside, R.A. Brown, J. Electrochem. Soc. 142, 2790 (1995)
T. Fukuda, M. Koizuka, A. Ohsawa, J. Electrochem. Soc. 141, 2216 (1994)
R.B. Ganesh, H. Matsuo, T. Kawamura, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto, J. Cryst Growth 310, 2697 (2008)
B. Gao, S. Nakano, K. Kakimoto, Global simulation of coupled carbon and oxygen transport in a unidirectional solidification furnace for solar cells. J. Electrochem. Soc. 157(2), H153–H159 (2010a)
B. Gao, X.J. Chen, S. Nakano, K. Kakimoto, J. Cryst Growth 312, 1572 (2010b)
U. Goesele, Oxygen, carbon, hydrogen and nitrogen in crystalline silicon, in Mater. Res. Soc. Symp. Proc., ed. by J. C. Mikkelsen Jr., S. P. Peaton, J. W. Corbett, S. J. Pennycook, (MRS, Pittsburgh, 1986), p. 419
N.N. Greenwood, A. Earnshaw, Chemistry of the Elements (Pergamon, Oxford, 1984), pp. 393–399. ISBN 0-08-022057-6
M. Higasa, Y. Nagai, S. Nakagawa, K. Kashima, ECS Trans. 72(4), 57 (2016)
H. Hirata, K. Hoshikawa, J. Cryst Growth 125, 181 (1992)
K.A. Hoffmann, S.T. Chiang, Computational Fluid Dynamics, vol II (Engineering Education System, Wichita, 2000), p. 69
K. Hoshikawa, X. Huang, Mater. Sci. Eng. B72, 73 (2000)
P. Jenny, B. Müller, Comput. Fluids 28, 951 (1999)
K. Kakimoto, K.W. Yi, M. Eguchi, J. Cryst Growth 163, 238 (1996)
T.A. Kinney, R.A. Brown, J. Crystal Growth 132, 551 (1993)
S. Kishino, M. Kanamori, N. Yoshihiro, M. Tajima, I. Lizuka, J. Appl. Phys. 50, 8240 (1979)
N. Kobayashi, J. Cryst Growth 108, 240 (1991)
B.O. Kolbesen, in Aggregation Phenomena of Point Defects in Silicon, ed. by E. Sirtl, J. Goorissen. The Electrochemical Society Proceedings Series, vol 83–4 (Pennington, 1983), pp. 155–175
Y.R. Li, M.W. Li, N. Imaishi, Y. Akiyama, T. Tsukada, J. Cryst Growth 267, 466 (2004)
L.J. Liu, K. Kakimoto, Int. J. Heat Mass Transf 48, 4481 (2005)
L.J. Liu, S. Nakano, K. Kakimoto, J. Cryst Growth 299, 48 (2007)
N. Machida, Y. Suzuki, K. Abe, N. Ono, M. Kida, Y. Shimizu, J. Cryst Growth 186, 362 (1998)
N. Machida, K. Hoshikawa, Y. Shimizu, J. Cryst Growth 210, 532 (2000)
H. Matsuo, R.B. Ganesh, S. Nakano, L.J. Liu, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto, J. Cryst Growth 310, 2204 (2008)
Y. Nagai, S. Nakagawa, K. Kashima, J. Cryst Growth 401, 737 (2014)
M. Ogino, Appl. Phys. Lett. 41, 847 (1982)
S. Pizzini, A. Sandrinelli, M. Beghi, D. Narducci, F. Allegretti, S. Torchio, G. Fabbri, G.P. Ottaviani, F. Demartin, A. Fusi, J. Electrochem. Soc. 135, 155 (1988)
L. Raabe, O. Patzold, I. Kupka, J. Ehrig, S. Wurzner, M. Stelter, J. Cryst Growth 318, 234 (2011)
R.C. Reid, J.M. Prausnitz, T.K. Sherwood, The Properties of Gases and Liquids, 3rd edn. (McGraw-Hill, Inc, New York, 1987)
C. Reimann, J. Friedrich, G. Müller, S. Wurzner, H.J. Möller, 22nd European Photovoltaic Solar Energy Conference (WIP-Munich, Milan, 2007)
C. Reimann, T. Jung, J. Friedrich, G. Müller, in Proceedings of the 33rd IEEE Photovoltaic Specialists Conference, 2008. ISBN 978-1-4244-1641-7
F. Schmid, C.P. Khattack, J. Electrochem. Soc. 126, 935 (1979)
F. Shimura, Semiconductor Silicon Crystal Technology (Academic Press, New York, 1989), p. 148
A.D. Smirnov, V.V. Kalaev, J. Cryst Growth 310, 2970 (2008)
A.D. Smirnov, V.V. Kalaev, J. Cryst Growth 311, 829 (2009)
Q. Sun, K.H. Yao, J. Lagowski, H.C. Gatos, J. Appl. Phys. 67, 4313 (1990)
M. Watanabe, K.W. Yi, T. Hibiya, K. Kakimoto, Progr. Cryst Growth Charact Mater. 38, 215 (1999)
A.G. Whittaker, Science 200, 763 (1978)
K.W. Yi, K. Kakimoto, M. Eguchi, H. Noguchi, J. Cryst Growth 165, 358 (1996)
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Gao, B., Kakimoto, K. (2019). Carbon Impurity in Crystalline Silicon. In: Yang, D. (eds) Handbook of Photovoltaic Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52735-1_21-1
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DOI: https://doi.org/10.1007/978-3-662-52735-1_21-1
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