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Self-Formation of Semiconductor Quantum Dots

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Handbook of Nano-Optics and Nanophotonics

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Abstract

We reviewed the self-formation control of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. Uniform InAs/GaAs QDs were demonstrated by self-size-limiting effect, the optimized capping growth, and the closely stacked growth using the nanoholes. High-density InAs QDs were achieved by Sb-mediated growth. In addition, an intermittent growth method was presented for ultralow density InAs QDs. Furthermore, the vertical and in-plane arrangements of InAs/GaAs QDs were attempted by using the strain-controlled underlying layers. One-dimensional QD chains were spontaneously formed along the [1–10] direction on the GaAs/InGaAs/GaAs(001) buffer layers. Two-dimensional arrangement of InAs QDs was demonstrated by using GaAsSb/GaAs(001) buffer layers.

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Authors and Affiliations

  1. Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, 182-8585, Tokyo, Japan

    Koichi Yamaguchi

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  1. Koichi Yamaguchi
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Correspondence to Koichi Yamaguchi .

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Editors and Affiliations

  1. Graduate School of Engineering, The University of Tokyo Graduate School of Engineering, Tokyo, Japan

    Motoichi Ohtsu

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Yamaguchi, K. (2013). Self-Formation of Semiconductor Quantum Dots. In: Ohtsu, M. (eds) Handbook of Nano-Optics and Nanophotonics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-31066-9_22

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