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Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

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Handbook of Laser Micro- and Nano-Engineering

Abstract

Semiconductor lithography currently provides a resolution close to 10 nm, with the aim of producing extremely fine patterning. Over the last decade, lithography techniques have progressed from ArF immersion to multiple patterning to extreme ultraviolet lithography (EUVL) operating at a wavelength of 13.5 nm. During this period, the first-generation lithography devices were immersion systems and achieved 40 nm resolution through a 1.35 numerical aperture (NA) projection lens in conjunction with an ArF laser (operating at 193 nm) and water immersion. To make full use of the capability of the projection lens, flexible illumination systems were developed involving mirror components combined with microelectromechanical systems. Such improvements occurred simultaneously with the optimization of pattern designs and improved image quality. In order to adhere to Moore’s law, multiple patterning technologies followed, combined with ArF immersion devices. Semiconductor process technologies were applied to lithography and provided doubled or even quadrupled resolution.

The realization of practical EUVL devices has been delayed by more than 10 years from the original schedule, but the high potential of EUVL has ensured continued work toward the goal. Significant improvements in EUVL, including the development of high-power light sources, have been realized during the past 5 years, and the basic resolution capability of this technique has been demonstrated. Though some issues still remain, such as stochastic effects, EUVL is now transitioning to the high-volume manufacturing stage in conjunction with projection optics having an NA of 0.33 and capable of resolving 13 nm half-pitch patterns. Future systems are also being developed that incorporate a special anamorphic projection optics with an NA of 0.55, capable of resolving 8 nm half-pitch patterns.

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Authors and Affiliations

  1. Head quarter, AS Lithography Consulting, Tokyo, Japan

    Akiyoshi Suzuki

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  1. Akiyoshi Suzuki
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Correspondence to Akiyoshi Suzuki .

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Editors and Affiliations

  1. RIKEN-SIOM Joint Research Unit, RIKEN Center for Advanced Photonics RIKEN-SIOM Joint Research Unit, Wako, Saitama, Japan

    Koji Sugioka

Section Editor information

  1. State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China

    Ya Cheng

  2. Paradigm Laser Research Limited, Tokyo, Japan

    Kunihiko Washio

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Suzuki, A. (2020). Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography. In: Sugioka, K. (eds) Handbook of Laser Micro- and Nano-Engineering. Springer, Cham. https://doi.org/10.1007/978-3-319-69537-2_7-1

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