Abstract
At high electric fields the scattering of carriers is significantly influenced by carrier heating. Usually scattering is increased and counteracts an enhanced accumulation of carrier energy from the field. Such increased scattering is observed for interaction with phonons, causing a decrease in mobility: first mostly from acoustical scattering and at higher fields from LO-phonon scattering. The drift velocity is thereby limited to values close to the thermal carrier velocity. The deformed carrier distribution can be approximated by a Boltzmann distribution, assuming a carrier temperature elevated above the lattice temperature. Above the energy of longitudinal optical phonons the distribution is skewed substantially, and a description of the distribution function and carrier mobility by a Fourier series is more appropriate. Also numerical solutions of transport problems are then advantageous.
This is a preview of subscription content, log in via an institution.
Notes
- 1.
This sublinearity occurs as long as no run-away currents preceding the dielectric breakdown are initiated (Yu and Cardona 1996). The run-away current regime will be discussed in Sect. 2.2 of chapter “Carrier Generation”.
- 2.
The parameters vsat and β are obtained from curve-fitting, depending on materials; for Si they are (Canali et al. 1975) for electrons vsat n = 1.53·109×T -0.87 (cm/s), βn = 2.57·10−2×T 0.66 (cm/s), and for holes vsat p = 1.62·108×T -0.52 (cm/s), βp = 0.46×T 0.17 (cm/s), with the temperature given in K.
- 3.
For example, conductivity measurements rely on carrier densities obtained from low-field measurements using Hall-effect data; time-of-flight techniques can hardly exclude shallow-level trapping.
- 4.
Compare to the high-field domains in superlattices discussed in Sect. 2.3.2 of chapter “Carrier Transport in Low-Dimensional Semiconductors”.
- 5.
This approximation is no longer acceptable for electrons exceeding the energy of LO phonons, as the tail of the distribution becomes substantially deformed, see Sect. 2.2.1 in chapter “Carrier Generation”.
- 6.
G is the Green function and W is the screened Coulomb potential; GW is employed for calculating the electron exchange-correlation interactions – see also Sects. 2.1.7 and 2.2.3 of chapter “Quantum Mechanics of Electrons in Crystals”.
- 7.
The effective mass in one of the four satellite minima is 0.4 m0; the density-of-state mass is hence (0.43/2 × 4)2/3 m0 = 1.01 m0).
References
Abramowitz M, Stegun IA (eds) (1968) Handbook of mathematical functions. Dover, New York
Alberigi-Quaranta A, Jacoboni C, Ottaviani G (1971) Negative differential mobility in III-V and II-VI semiconducting compounds. Rivista del Nuovo Comento 1:445
Asche M (1989) Multivalued hot electron distributions as spontaneous symmetry breaking. Solid State Electron 32:1633
Baroni S, de Gironcoli S, Dal Corso A, Paolo G (2001) Phonons and related crystal properties from density-functional perturbation theory. Rev Mod Phys 73:515
Bass FG, Yerema VD, Kulagin OP (1996) Emission of hot electrons out of semiconductors. In: Proceeding of the IEEE international vacuum microelectronics conference (IVMC), Piscataway, NJ, USA, pp 107–111
Bernardi M, Vigil-Fowler D, Ong CS, Neaton JB, Louie SG (2015) Ab initio study of hot electrons in GaAs. Proc Natl Acad Sci U S A 112:5291
Böer KW (1985a) High-field carrier transport in inhomogeneous semiconductors. Ann Phys 497:371
Böer KW (1985b) Current-voltage characteristics of diodes with and without light. Phys Stat Sol A 87:719
Böer KW, Bogus K (1968) Electron mobility in CdS at high electric fields. Phys Rev 176:899
Böer KW, Voss P (1968) Stationary high-field domains in the range of negative differential conductivity in CdS single crystals. Phys Rev 171:899
Bray R, Brown DM (1960) Lattice scattering mechanisms in p-type germanium. In: Proceedings of the 5th international conference on the physics of semiconductors, Prague, Academic, New York, pp 82–85
Brunetti R, Jacoboni C (1984) Transient and stationary properties of hot-carrier diffusivity in semiconductors. In: Alfano RR (ed) Semiconductors probed by ultrafast laser spectroscopy vol I. Academic, Orlando, pp 367–412
Brunetti R, Jacoboni C, Nava F, Reggiani L, Bosman G, Zijlstra RJJ (1981) Diffusion coefficient of electrons in silicon. J Appl Phys 52:6713
Budd HF (1966) Hot carriers and the variable path method. J Phys Soc Jpn Suppl 21:420
Burtyka MV, Glukhov OV, Yakovenko VM (1991) Interaction of hot electrons with two-dimensional gas in semiconductor superlattices. Solid State Electron 34:559
Canali C, Majni G, Minder R, Ottaviani G (1975) Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature. IEEE Trans Electron Devices 22:1045
Chambers RG (1952) The kinetic formulation of conduction problems. Proc Phys Soc Lond, Sect A 65:458
Conwell EM (1967) High-field transport in semiconductors. Academic, New York
Cross AJ, Kent AJ, Hawker P, Lehmann D, Cz J, Henini M (1999) Phonon emission by warm electrons in GaAs quantum wells: the effect of well width on the acoustic-optic crossover. Physica B 263:526
Dalven R (1990) Introduction to applied solid state physics, 2nd edn. Plenum Press, New York
Dember H (1931) Über eine photoelektronische Kraft in Kupferoxydul-Kristallen. Phys Z 32:554. (On a photoelectric E.M.F. in cuprous oxide crystals, in German)
Evans AGR, Robson PN (1974) Drift mobility measurements in thin epitaxial semiconductor layers using time-of-flight techniques. Solid State Electron 17:805
Ferry DK (1975) High-field transport in wide-band-gap semiconductors. Phys Rev B 12:2361
Ferry DK (1980) Modeling of carrier transport in the finite collision duration regime: effects in submicron semiconductor devices. In: Ferry DK, Barker JR, Jacoboni C (eds) Physics of nonlinear transport in semiconductors. Plenum Press, New York, pp 577–588
Fröhlich H, Paranjape BV (1956) Dielectric breakdown in solids. Proc Phys Soc Lond, Sect B 69:21
Giustino F, Cohen ML, Louie SG (2007) Electron-phonon interaction using Wannier functions. Phys Rev B 76:165108
Gunn JB (1963) Microwave oscillations of current in III–V semiconductors. Solid State Commun 1:88
Habegger MA, Fan HY (1964) Oscillatory intrinsic photoconductivity of GaSb and InSb. Phys Rev Lett 12:99
Haug H, Koch SW (1990) Quantum theory of optical and electronic properties of semiconductors. World Scientific, Singapore
Henneberger F, Schmidt-Rink S, Göbel EO (eds) (1993) Optics of semiconductor nanostructures. Akademie-Verlag, Berlin
Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL, Singh R (2000) ‘Classical’ current-voltage characteristics of 4H-SiC p+-n junction diodes. Semicond Sci Technol 15:908
Jacoboni C, Reggiani L (1979) Bulk hot-electron properties of cubic semiconductors. Adv Phys 28:493
Jacoboni C, Reggiani L (1983) The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev Mod Phys 55:645
Jacoboni C, Canali C, Ottaviani G, Alberigi Quaranta A (1977) A review of some charge transport properties of silicon. Solid State Electron 20:77
Jacoboni C, Nava F, Canali C, Ottaviani G (1981) Electron drift velocity and diffusivity in germanium. Phys Rev B 24:1014
Kim D-S, Yu PY (1991) Hot-electron relaxations and hot phonons in GaAs studied by subpicosecond Raman scattering. Phys Rev B 43:4158
Kurosawa T (1966) Monte Carlo simulation of hot electron problems. J Phys Soc Jpn Suppl 21:424
Lebwohl PA, Price PJ (1971) Hybrid method for hot electron calculations. Solid State Commun 9:1221
Mickevicius R, Reklaitis A (1990) Electron intervalley scattering in gallium arsenide. Semicond Sci Technol 5:805
Nag BR (1980) Electron transport in compound semiconductors. Springer, Berlin
Nag BR (1984) Relaxation of carriers. In: Alfano RR (ed) Semiconductors probed by ultrafast laser spectroscopy vol I. Academic, Orlando, pp 3–44
Oh KH, Ong CK, Tan BTG (1992) Field dependence of the overshoot phenomena in InP. J Phys Chem Solids 53:555
Ohno Y (1990) Estimation of velocity-overshoot in small size semiconductors. Solid State Electron 33:935
Ohno Y (1994) A new bulk negative differential conductance mechanism with multiple steady states. Semicond Sci Technol 9:615
Price PJ (1977) Calculation of hot electron phenomena. Solid State Electron 21:9
Prior AC (1960) A reversed carrier transport effect in germanium. Proc Phys Soc 76:465
Rees HD (1969) Calculation of distribution functions by exploiting the stability of the steady state. J Phys Chem Solids 30:643
Rees HD (1972) Numerical solution of electron motion in solids. J Phys C 5:641
Reklaitis A (2012) High field electron and hole transport in wurtzite InN. Phys Stat Sol (b) 249:1566
Ridley BK (1997) Electrons and phonons in semiconductor multilayers. Cambridge University Press, Cambrisge/New York
Roberson HS (1993) Statistical thermophysics. Prentice-Hall, Englewood Cliffs
Rode DL (1970) Electron mobility in direct-gap polar semiconductors. Phys Rev B 2:1012
Sasaki W, Shibuya M, Mizuguchi K, Hatoyama G (1959) Anisotropy of hot electrons in germanium. J Phys Chem Solids 8:250
Schwierz F (2005) An electron mobility model for wurtzite GaN. Solid State Electron 49:889
Seeger K (2004) Semiconductor physics, 9th edn. Springer, Berlin
Shibuya M (1955) Hot electron problem in semiconductors with spheroidal energy surfaces. Phys Rev 99:1189
Shockley W (1951) Hot electrons in germanium and Ohm’s law. Bell Syst Tech J 30:990
Singh J (1993) Physics of semiconductors and their heterostructures. McGraw-Hill, New York
Smirl AL (1984) Dynamics of high-density transient electron-hole plasmas in germanium. In: Alfano RR (ed) Semiconductors probed by ultrafast laser spectroscopy vol I. Academic, Orlando, pp 198–273
Smirl AL, Moss SC, Lindle JR (1982) Picosecond dynamics of high-density laser-induced transient plasma gratings in germanium. Phys Rev B 25:264
Srivastava GP (1990) The physics of phonons. Hilger, Bristol
Tanimura H, Kanasaki J, Tanimura K, Sjakste J, Vast N, Calandra M, Mauri F (2016) Formation of hot-electron ensembles quasiequilibrated in momentum space by ultrafast momentum scattering of highly excited hot electrons photoinjected into the Γ valley of GaAs. Phys Rev B 93:161203
van Driel HM (1985) Physics of pulsed laser processing of semiconductors. In: Alfano RR (ed) Semiconductors probed by ultrafast laser spectroscopy vol II. Academic, Orlando, pp 57–94
Wirner C, Witzany M, Kiener C, Zandler G, Bohm G, Gornik E, Vogl P, Weimann G (1992) Experimental and theoretical investigation of the drift velocity and velocity distribution function in GaAs/AlGaAs heterostructures. Semicond Sci Technol 7:B267
Yu PY, Cardona M (1996) Fundamentals of semiconductors, ch 5. Springer, Berlin
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2017 Springer International Publishing AG
About this entry
Cite this entry
Böer, K.W., Pohl, U.W. (2017). Carrier Scattering at High Electric Fields. In: Semiconductor Physics. Springer, Cham. https://doi.org/10.1007/978-3-319-06540-3_24-2
Download citation
DOI: https://doi.org/10.1007/978-3-319-06540-3_24-2
Received:
Accepted:
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-06540-3
Online ISBN: 978-3-319-06540-3
eBook Packages: Springer Reference Physics and AstronomyReference Module Physical and Materials ScienceReference Module Chemistry, Materials and Physics
Publish with us
Chapter history
-
Latest
Carrier Scattering at High Electric Fields- Published:
- 12 June 2022
DOI: https://doi.org/10.1007/978-3-319-06540-3_24-4
-
Carrier Scattering at High Electric Fields
- Published:
- 26 March 2020
DOI: https://doi.org/10.1007/978-3-319-06540-3_24-3
-
Carrier Scattering at High Electric Fields
- Published:
- 28 September 2017
DOI: https://doi.org/10.1007/978-3-319-06540-3_24-2
-
Original
Carrier Scattering at High Electric Fields- Published:
- 09 February 2017
DOI: https://doi.org/10.1007/978-3-319-06540-3_24-1