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Porous Silicon Formation by Photoetching

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Handbook of Porous Silicon

Abstract

The literature on the photoetching technique of preparing photoluminescent mesoporous silicon films using both hydrofluoric acid-based and alkali electrolytes is reviewed. The benefits of using an incoherent light source and specific oxidizing agents are highlighted. The technique is particularly useful for creating thin porous regions in n-type Si wafers, SOI wafers, micromachined wafers, or those that contain electronic circuitry.

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Authors and Affiliations

  1. Division of Electronics and Informatics, Faculty of Science and Technology, Gunma University, Kiryu-shi, 376-8515, Gunma, Kiryu-shi, Japan

    Sadao Adachi

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  1. Sadao Adachi
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Correspondence to Sadao Adachi .

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Editors and Affiliations

  1. Malvern, Worcestershire, United Kingdom

    Leigh Canham

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© 2014 Springer International Publishing Switzerland

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Adachi, S. (2014). Porous Silicon Formation by Photoetching. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-05744-6_6

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