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Electrical Transport in Porous Silicon

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Handbook of Porous Silicon

Abstract

The future development of porous silicon (PS)-based optoelectronic devices depends on a proper understanding of electrical transport properties of the PS material. Electrical transport in PS is influenced not only by each step of processing and fabrication methods but also by the properties of the initial base substrate. This chapter endeavors to chronologically document how the knowledge base on the nature of carrier transport in PS and the factors governing the electrical properties has evolved over the past years. The topics covered include the proposed electrical transport models including those based on effective medium theories, studies on contacts, studies on physical factors influencing electrical transport, anisotropy in electrical transport, and attempts to classify the PS material.

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References

  • Aroutiounian VM, Ghulinyan MZ (2003) Electrical conductivity mechanisms in porous silicon. Phys Stat Sol (a) 197:462

    Article  Google Scholar 

  • Axelrod E, Givant A, Shappir J, Feldman Y, Sa’ar A (2002) Dielectric relaxation and transport in porous silicon. Phys Rev B 65:165429

    Article  Google Scholar 

  • Balagurov LA, Yarkin DG, Petrova EA (2000) Electronic transport in porous silicon of low porosity made on a p+ substrate. Mater Sci Eng B 69–70:127

    Article  Google Scholar 

  • Balberg I (2000) Transport in porous silicon: The pea-pod model. Philos Mag B 80:691

    Article  Google Scholar 

  • Beale MIJ, Benjamin JD, Uren MJ, Chew NG, Cullis AG (1985) An experimental and theoretical study of the formation and microstructure of porous silicon. J Cryst Growth 73:622

    Article  Google Scholar 

  • Ben-Chorin M, Moller F, Koch F (1994) Nonlinear electrical transport in porous silicon. Phys Rev B 49:2981

    Article  Google Scholar 

  • Ben-Chorin M, Moller F, Koch F, Schirmacher W, Eberhard M (1995a) Hopping transport on a fractal: ac conductivity of porous silicon. Phys Rev B 51:2199

    Article  Google Scholar 

  • Ben-Chorin M, Möller F, Koch F (1995b) Band alignment and carrier injection at the porous-silicon–crystalline-silicon interface. J Appl Phys 77:4482

    Article  Google Scholar 

  • Bhattacharya E, Ramesh P, Suresh Kumar C (2000) J Porous Mater 7:299

    Article  Google Scholar 

  • Bisi O, Ossicini S, Pavesi L (2000) Porous silicon: a quantum sponge structure for silicon based optoelectronics. Surf Sci Rep 38:1

    Article  Google Scholar 

  • Boarino L, Borini S, Amato G (2009) Electrical properties of mesoporous silicon: from a surface effect to coulomb blockade and more. J Electrochem Soc 156:K223

    Article  Google Scholar 

  • Borini S, Boarino L, Amato G (2006) Anisotropic resistivity of (100)-oriented mesoporous silicon. Appl Phys Lett 89:132111

    Article  Google Scholar 

  • Bouaicha M, Khardani M, Bessais B (2006) Correlation of electrical conductivity and photoluminescence in nanoporous silicon. Mater Sci Eng C 26:486

    Article  Google Scholar 

  • Bouaicha M, Khardani M, Bessais B (2008) Evaluation of the electrical conductivity of nano-porous silicon from photoluminescence and particle size distribution. Mater Sci Eng B 147:235

    Article  Google Scholar 

  • Canham LT (ed) (1997) Properties of Porous Silicon. IEE INSPEC, The Institution of Electrical Engineers, London

    Google Scholar 

  • Diligenti A, Nannini A, Pennelli G, Pieri F (1996) Current transport in freestanding porous silicon. Appl Phys Lett 68:687

    Article  Google Scholar 

  • Dutta SK, Hossain SM, Chakraborty S, Saha H (2002) Conductivity modulation of porous silicon by formation parameters. Phys Stat Sol (a) 191:535

    Article  Google Scholar 

  • Fejfar A, Pelant I, Sipek E, Kocka J, Juska G, Matsumoto T, Kanemitsu Y (1995) Transport study of self-supporting porous silicon. Appl Phys Lett 66:1098

    Article  Google Scholar 

  • Foll H, Christophersen M, Carstensen J, Hasse G (2002) Formation and application of porous silicon. Mater Sci Eng R 280:1

    Google Scholar 

  • Forsh PA, Osminkina LA, Timoshenko VY, Kashkarov PK (2004) Specific features of electrical transport in anisotropically nanostructured silicon. Semiconductors 38:603

    Article  Google Scholar 

  • Forsh P, Zhigunov D, Osminkina L, Timoshenko V, Kashkarov P (2005) Strong anisotropy of lateral electrical transport in 110 porous silicon films. Phys Stat Sol (c) 2:3404

    Article  Google Scholar 

  • Futagi T, Matsumoto T, Katsuno M, Ohta Y, Mimura H, Kitamura K (1993) Visible light emission from a pn junction of porous silicon and microcrystalline silicon carbide. Appl Phys Lett 63:1209

    Article  Google Scholar 

  • Giebel G, Pavesi L (1995) About the I–V characteristic of metal-porous silicon diodes. Phys Stat Sol (a) 151:355

    Article  Google Scholar 

  • Hamilton B, Jacobs J, Hill DA, Pettifer RF, Teehan D, Canham LT (1998) Size-controlled percolation pathways for electrical conduction in porous silicon. Nature 393:443

    Article  Google Scholar 

  • Islam MN, Kumar S (2001) Influence of crystallite size distribution on the micro-Raman analysis of porous Si. Appl Phys Lett 78:715

    Google Scholar 

  • Islam MN, Pradhan A, Kumar S (2005) Effects of crystallite size distribution on the Raman-scattering profiles of silicon nanostructures. J Appl Phys 98:024309

    Article  Google Scholar 

  • Islam MN, Ram SK, Kumar S (2007) Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions. J Phys D Appl Phys 40:5840

    Article  Google Scholar 

  • Islam MN, Ram SK, Kumar S (2009) Mott and Efros-Shklovskii hopping conductions in porous silicon nanostructures. Physica E 41:1025

    Article  Google Scholar 

  • John GC, Singh VA (1994) Theory of the photoluminescence spectra of porous silicon. Phys Rev B 50:5329

    Article  Google Scholar 

  • Kanungo J, Maji S, Saha H, Basu S (2009) Stable aluminium ohmic contact to surface modified porous silicon. Solid-State Electron 53:663

    Article  Google Scholar 

  • Kanungo J, Maji S, Saha H, Basu S (2010) Chemical surface modification of porous silicon with palladium and characterizations. Mater Sci Eng B 167:91

    Article  Google Scholar 

  • Khardani M, Bouaicha M, Dimassi W, Zribi M, Aouida S, Bessais B (2006) Electrical conductivity of free-standing mesoporous silicon thin films. Thin Solid Films 495:243

    Article  Google Scholar 

  • Kocka J, Oswald J, Fejfar A, Sedlacik R, Zelezny V, The-Ha H, Luterowa K, Pelant I (1996a) Charge transport in porous silicon: considerations for achievement of efficient electroluminescence. Thin Solid Films 276:187

    Article  Google Scholar 

  • Kocka J, Pelant I, Fejfar A (1996b) Light emitting silicon, recent progress. J Non-Cryst Solids 198–200:857

    Article  Google Scholar 

  • Koshida N, Koyama H (1992) Visible electroluminescence from porous silicon. Appl Phys Lett 60:347

    Article  Google Scholar 

  • Koyama H, Koshida N (1993) Electrical properties of luminescent porous silicon. J Lumin 57:293

    Article  Google Scholar 

  • Lee WH, Lee C, Jang J (1996) Quantum size effects on the conductivity in porous silicon. J Non-Cryst Solids 198:911

    Article  Google Scholar 

  • Lehmann V, Hofinann H, Moller F, Gruning U (1995) Resistivity of porous silicon: a surface effect. Thin Solid Films 255:20

    Article  Google Scholar 

  • Lubianiker Y, Balberg I (1997) Two Meyer-Neldel rules in porous silicon. Phys Rev Lett 78:2433

    Article  Google Scholar 

  • Lubianiker Y, Balberg I, Partee J, Shinar J (1996) Porous silicon as a near-ideal disordered semiconductor. J Non-Cryst Solids 198–200:949

    Article  Google Scholar 

  • Mares JJ, Kristofik J, Pangrac J, Hospodkova A (1993) On the transport mechanism in porous silicon. Appl Phys Lett 63:180

    Article  Google Scholar 

  • Marsh G (2002) Porous silicon a useful imperfection. Mater Today 5:36

    Article  Google Scholar 

  • Martin-Palma RJ, Perez-Rigueiro J, Guerrero-Lemus R, Moreno JD, Martinez-Duart J (1999) Aging of aluminum electrical contacts to porous silicon. J Appl Phys 85:583

    Article  Google Scholar 

  • Martin-Palma RJ, Martinez-Duart JM, Li L, Levy RA (2002) Electrical behavior of double-sided metal/porous silicon structures for optoelectronic devices. Mater Sci Eng C 19:359

    Article  Google Scholar 

  • Mathur RG, Vivechana, Mehra RM, Mathur PC, Jain VK (1998) Jain, Electron transport in porous silicon. Thin Solid Films 312:254

    Google Scholar 

  • Mehra RM, Agarwal V, Singh VA, Mathur PC (1998) Unified model for the luminescence and transport data in self-supporting porous silicon. J Appl Phys 83:2235

    Article  Google Scholar 

  • Mikrajuddin, Shi FG, Okuyama K (2000) Electrical conduction in porous silicon: temperature dependence. Microelectron J 31:187

    Article  Google Scholar 

  • Mikrajuddin, Shi FG, Okuyama K (2001) Temperature-dependent electrical conduction in porous silicon: Non-Arrhenius behavior. Europhys Lett 54:234

    Article  Google Scholar 

  • Parkutik VP (1996) Residual electrolyte as a factor influencing the electrical properties of porous silicon. Thin Solid Films 276:195

    Article  Google Scholar 

  • Pavesi L, Ceschini M, Mariotto G, Zanghellini E, Bisi O, Anderle M, Calliari L, Fedrizzi M (1994) Spectroscopic investigation of electroluminescent porous silicon. J Appl Phys 75:1118

    Article  Google Scholar 

  • Peng C, Hirschman KD, Fauchet PM (1996) Carrier transport in porous silicon light-emitting devices. J Appl Phys 80:295

    Article  Google Scholar 

  • Pulsford NJ, Rikken GLJA, Kessener YARR, Lous EJ, Venhuizen AHJ (1993) Carrier injection and transport in porous silicon Schottky diodes. J Lumin 57:181

    Article  Google Scholar 

  • Pulsford NJ, Rikken GLJA, Kessener YARR, Lous EJ, Venhuizen AHJ (1994) Behavior of a rectifying junction at the interface between porous silicon and its substrate. J Appl Phys 75:636

    Article  Google Scholar 

  • Ray AK, Mabrook MF, Nabok AV, Brown S (1998) Transport mechanisms in porous silicon. J Appl Phys 84:3232

    Article  Google Scholar 

  • Saha H, Dutta SK, Hossain SM, Chakraborty S, Gangopadhyay U, Saha A (1998) Mechanism and control of formation of porous silicon on p-type Si. Bull Mater Sci 21:195

    Article  Google Scholar 

  • Schwarz R, Wang F, Ben-Chorin M, Grebner S, Nikolov A, Koch F (1995) Photocarrier grating technique in mesoporous silicon. Thin Solid Films 255:23

    Article  Google Scholar 

  • Simons AJ, Cox TI, Uren MJ, Calcott PDJ (1995) The electrical properties of porous silicon produced from n + silicon substrates. Thin Solid Films 255:12

    Article  Google Scholar 

  • Theodoropoulou M, Karahaliou PK, Krontiras CA, Georga SN, Xanthopoulos N, Pisanias MN, Tsamis C, Nassiopoulou AG (2004) Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous silicon/p-cSi structures. J Appl Phys 96:7637

    Article  Google Scholar 

  • Yakimov AI, Stepina NP, Dvurechenskii AV, Scherbakova LA (1995) Low-dimensional hopping conduction in porous amorphous silicon. Physica B 205:298

    Article  Google Scholar 

  • Yakimov AI, Stepina NP, Dvurechenskii AV, Adkins CJ, Darvin VA (1996) Current–voltage characteristics of porous amorphous Si1-xMnx in the one-dimensional hopping regime. Philos Mag Lett 73:17

    Article  Google Scholar 

  • Zhang L, Coffer JL, Gnade BE, DaXue X, Pinizzotto RF (1995) Effects of local ambient atmosphere on the stability of electroluminescent porous silicon diodes. J Appl Phys 77:5936

    Article  Google Scholar 

  • Zimin SP (2000) Classification of electrical properties of porous silicon. Semiconductors 34:353

    Article  Google Scholar 

  • Zimin SP (2006) Hopping conductivity in low-porosity mesoporous silicon formed on p+-Si:B. Semiconductors 40(11):1350

    Article  Google Scholar 

  • Zimin SP, Bragin AN (1999) Conductivity relaxation in coated porous silicon after annealing. Semiconductors 33:457

    Article  Google Scholar 

  • Zimin SP, Bragin AN (2004) Tensoresistive effect in porous silicon layers with different morphology. Semiconductors 38:594

    Article  Google Scholar 

  • Zimin SP, Komarov EP (1998) Influence of short-term annealing on the conductivity of porous silicon and the transition resistivity of an aluminum-porous silicon contact. Tech Phys Lett 24:226

    Article  Google Scholar 

  • Zimin SP, Kuznetsov VS, Prokaznikov AV (1995) Electrical characteristics of aluminum contacts to porous silicon. Appl Surf Sci 91:355

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, 8000, Aarhus C, Denmark

    Sanjay K. Ram

  2. Interdisciplinary Nanoscience Center – iNANO, Aarhus University, Gustavs Wieds Vej 14, 8000, Aarhus C, Denmark

    Sanjay K. Ram

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  1. Sanjay K. Ram
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Correspondence to Sanjay K. Ram .

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Editors and Affiliations

  1. Malvern, Worcestershire, United Kingdom

    Leigh Canham

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© 2014 Springer International Publishing Switzerland

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Ram, S.K. (2014). Electrical Transport in Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-05744-6_28

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