Abstract
This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.
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Li, ZY., Kuo, HC., Shieh, CY., Chiu, CH., Tu, PM., Uen, WY. (2017). LED Materials: Epitaxy and Quantum Well Structures. In: Karlicek, R., Sun, CC., Zissis, G., Ma, R. (eds) Handbook of Advanced Lighting Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-00176-0_10
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