Definition
Solar cells are sources of electrical energy when they are illuminated by solar radiations . They deliver to a load a photocurrent and a photovoltage . First used for space applications, solar cells were progressively taken into account for terrestrial applications. The main problems to solve are, today, the photovoltaic energy cost which is too high and the conversion efficiency which is limited. Most of the cells are based on a p–n junction made with a p-type semiconductor and an n-type semiconductor. When both materials are the same, the cell is based on a homojunction. When the materials are different, the cell is based on a heterojunction. One silicon cell, 15.6 × 15.6 cm2, can deliver 7–9 A under ∼0.6 V only, and for this reason, the cells are connected in modules in order to provide a substantial electrical power (about 100–250 W). The semiconductor silicon is known as an extremely pure material; 9 N purity level is...
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Abbreviations
- Antireflection coating layer (ARC):
-
Layer deposited on the illuminated surface of a cell which reduces the reflection of the light.
- Dislocations:
-
Lack or additional line of atoms in the crystal.
- Gettering process:
-
Extraction of unwanted impurities and trapping in a region of a wafer which does not contribute to the photocurrent.
- Grain boundary (GB):
-
Border zone of two adjacent crystalline grains.
- Homojunction (heterojunction):
-
Part of a semiconductor diode which separates a p-type region from an n-type one made with the same material (in a heterojunction, the materials are different).
- Minority carrier lifetime τ and diffusion length L:
-
Duration and distance run by an electron in excess (generated by the sunlight) in p-type silicon or by a hole in excess in n-type silicon.
- Minority carrier diffusion length L:
-
Distance run by carriers in excess.
- Multicrystalline silicon:
-
Large grained polycrystalline material, a few mm to 1 cm in size.
- Passivation:
-
Mechanism which reduces the electrical activity of crystallographic defects, of surfaces, of interfaces, and of unwanted impurities.
- Precipitates:
-
Agglomeration of impurity atoms within the crystal.
- Solar cell conversion efficiency η:
-
Ratio of the electrical power output to the sunlight power input.
- Texturization:
-
Chemical or physical technique which increases the roughness of the surface in order to reduce the light reflection and the diffusion.
- Wafer:
-
Trench of silicon cut out from an ingot, ∼200 μm in thickness.
Bibliography
Primary Literature
Hunt LP (1990) Silicon precursors: their manufacture and properties. In: O’Mara WC, Herring RB, Hunt LP (eds) Handbook of semiconductor silicon technology. William Andrew/Noyes, Park Ridge, pp 1–32
Rogers LC (1990) Polysilicon preparation. In: O’Mara WC, Herring RB, Hunt LP (eds) Handbook of semiconductor silicon technology. William Andrew Publishing/Noyes, Park Ridge, pp 33–933
Bischoff F (1954) German Patents n° 1102117 and 1140549, filed May 18, USP 3146123
Weihaus D, Schlimbeck E, Hesse K, Dornberger E (2005) Pilot production of granular polysilicon from trichlorosilane using a fluidized bed reactor. In: 20th EUPVSEC, Barcelona, Spain, pp 564–568
Cecarolli B, Lohne O (2003) Solar grade silicon feedstock. In: Luque A, Hegedus S (eds) Handbook of photovoltaic science and engineering. Wiley, Sussex, pp 153–204
Hesse K, Schindlbeck E, Dornberger E, Fischer M (2009) Status and development of solar grade silicon feedstock. In: 24th EUPVSEC, Hamburg, Germany, p 883
Joyce DB, Khattak CP, Schmid F (2001) Segregation steps applied to the purification of metallurgical silicon. In: 11th NREL workshop on crystalline silicon solar cell materials and processes, Estes Park (CO), USA, p 177
Di Sabatino M, Ǿvrelid EJ, Kopecek R, Binetti S, Mihailetchi VD, Geerligs L, Vaenes AN (2009) FoXy-development of solar grade silicon feedstock for crystalline wafers and cells by purification and crystallisation. In: 3rd international workshop on crystalline silicon solar cells, Trondheim, Norway
Enebakk E, Tranell GM, Tronstad R (2003) Calcium-silicate based slag for phosphorus and boron removal from molten silicon, patent PCT/NO03/00091
Amouroux J, Morvan D (1981) Production of high-purity silicon ingot. US Patent 4399116
Yuge N, Baba H, Sakaguchi Y, Nishikawa K, Terashima H, Aratami F (1994) Purification of metallurgical silicon up to solar grade. Sol Energ Mat Sol Cells 34:243–250
Naomichi N, Misamichi A, Kazuhiro H, Hiroyuki B, Kenkichi Y, Yasuhiko S, Yoshihide K (1998) Purification of silicon for solar battery and apparatus, Japanese patent JP10273311
Nakamura N, Baba H, Sakaguchi S, Kato Y (2004) Boron removal in molten silicon by a steam-added plasma melting method. Mater Trans 45:858–864
Alemany C, Trassy C, Pateyron B, Li KI, Delannoy Y (2002) Refining of metallurgical-grade silicon by inductive plasma. Sol Energ Mat Sol Cells 72:41–48
Delannoy Y, Alemany C, Li KI, Proulx P, Trassy C (2002) Plasma-refining process to provide solar-grade silicon. Sol Energ Mat Sol Cells 72:69–75
Einhaus R, Kraiem J, Cocco F, Caratini Y, Bernou D, Sarti D, Rey G, Monna R, Trassy C, Degoulange J, Delannoy Y, Martinuzzi S, Périchaud I (2006) PHOTOSIL-simplified production of solar silicon from metallurgical silicon. In: 21st EUPVSEC, Dresden, Germany, p 580
Pizzini S, Acciari M, Binetti S (2005) From electronic grade to solar grade silicon: chances and challenges in photovoltaics. Phys Stat Sol (a) 15:1928–1942
Peter K, Kopecek R, Soiland A, Enebakk E (2008) Future potential for SoG-Si feedstock from the metallurgical route. In: 23 rd EUPVSEC, Valencia, Spain, Sept 2008, pp 947–950
Hoffman V, Petter K, Djordjevic-Reiss J, Häckedal JT, Tronstad R, Vlasenko T, Buchovskaja I, Beringov S, Bauer M (2008) First results on industrialization of ELKEM solar silicon at Pillar JSC and Q-Cells. In: 23 rd EUPVSEC, Valencia, Spain, p 1117
Prettyman K, Pfeiffer G, Krause R, Hovel H (2009) Solar cell production using UMG silicon. In: 24th EUPVSEC, Hamburg, Germany, p 1333
Dietze W, Keller K, Mühlbauer A (1981) Float zone silicon in crystals. In: Grabmaier J (ed) Crystals, growth, properties, and applications. Springer, Berlin/Heidelbreg, pp 1–42
Pfann WG (1952) Principle of zone melting. Trans AIME 194:747
Theuerer H (1952) USP 3060123 filed Dec 17
Emeis RZ (1954) Tiegelfreies ziehen von silicium einkristallen, Naturforsch. 9a, 67
Czochralski JZ (1918) Phys Chem 92:219
Teal GT, Little JB (1950) Phys Rev 78:657
O’ Mara WC (1990) Oxygen, carbon and nitrogen in silicon. In: O’Mara WC, Herring RB, Hunt LP (eds) Handbook of semiconductor silicon technology. William Andrew Publishing/Noyes, Park Ridge, pp 451–537
Dietl J, Helmreich D, Sirtl E (1981) Solar silicon. In: Grabmaier J (ed) Crystals, growth, properties, and applications. Springer, Berlin, pp 43–107
Schmid F, Basaran M, Khattak CP (1980) Purification of metallurgical silicon by slagging and segregation. In: 3rd EUPVSEC, Berlin, Germany, p 252
Le Quang N, Gauthier M, Pihan E, Nichiporuk O, Madon F, Goaer G (2007) 22nd EUPVSEC Milan, p 943–947
Kraiem J, Einhaus R, Lissalde F, Dubois S, Enjalbert N, Drevet B, Servant F, Camel D (2008) Innovative crystallisation on mc-Si ingots from different types of silicon feedstock. In: 23rd EUPVSEC, Valencia, Spain, p1071
Kawamura R, Sasatani K, Onizuka T, Kaneko K (1994) Continuous growth of mc-Si ingots by cold crucible technique. In: 24th IEEE PVSC, vol 2, Waikola, Hawai, USA, pp 1652–55
Landaud D (2006) Continuous growth of mc-Si ingot in a cold crucible. Photon Int 12:38
Dour G, Erhet H, Laugier A, Sarti D, Garnier M, Durand F (1998) Continuous solidification of mc-Si from an inductive cold crucible. J Cryst Growth 193(1–2):230
Weber B, Bierwisch C, Kübler R, Kleer G (2008) Investigation on the sawing of solar silicon by application of wires of 100 μm diameter. In: 23rd EUPVSEC, Valencia, p 1285
Kondo Y, Watanabe N, Ide D, Matsuki T, Takato H, Sakata I (2008) Characterization of mc-Si wafers for solar cell applications sliced with a fixed abrasive wire. In: 23rd EUPVSEC, Valencia, p 1297
Dross F, Milhe A, Robbelein J, Gordon I, Bouchard PO, Beaucarne G, Poortsmans J (2008) SLIM-CUT a kerf-loss free method for wafering 50 μm thick crystalline Si wafers based on stress-induced lift-off. In: 23rd EUPVSEC, Valencia, Spain, p 127
Ciszek J (1985) Crystallographic growth forms of Si on a free melt surface. J Electrochem Soc 132:422
Wald F (1981) Crystal growth of silicon ribbons for terrestrial solar cells by the EFG method. In: Grabmaier J (ed) Silicon. Springer, Berlin, p 147
Kalejs JP (2002) Silicon ribbons and foils-state of the art. Sol Energ Mat Sol Cells 72:139
Mosel F, Birkmann B, Müller M, Westram I, Seidl A (2009) Growth conditions and material properties of EFG ribbon silicon. In: 3rd international workshop on crystalline silicon solar cells, SINTEF/NTU, Trondheim
Ciszek TF, Hurd LL, Schietzelt MJ (1982) Filament materials for edge-supported pulling of silicon sheet crystals. J Electrochem Soc 19:2838
Ro A, Kim DS, Nakayashiki K, Yelundur V, Rounsainville B (2004) High efficiency solar cells on edge defined film def grown 18.2% and string ribbon 17.8% by rapid thermal processing. Appl Phys Lett 84:145
Hayes JR, Zhang X, Meier DL, Maahjan S (2001) Origins of defect structures in dendritic web silicon. J Cryst Growth 233:451
Nakayashiki K, Rounsainville B, Yelundur V, Kim DS, Rohatgi A, Clarkphelps R, Hanoka JJ (2006) Fabrication and analysis of high-efficiency string ribbon Si solar cells. Solid-State Electron 50:1406
Wallace R, Hanoka JJ, Rohatgi A, Grotty G, SOLMAT 48: 179
Seren H, Kaes M, Hahn G, Gutjahr A, Burgers AR, Schönecker A (2007) Efficiency potential of RGS Si from current R&D production. In: 22nd EUPVSEC, Milan, Italy, p 854
Focsa A, Slaoui A, Schmitt SB, Jolivet E, Belouet C (2009) Gettering effect and FG annealing on thin RST Si solar cells. In: 24th EUPVSEC, Hamburg, Germany, p 1887
Yamatsugu H, Goma S, Kidoguchi S, Oishi R, Yoshida K, Yano K, Taniguchi H (2008) Characteristics of CDS silicon wafers. In: 23rd EUPVSEC, Valencia, Spain
Eltran YY (2000) SOI-epi and SCLIPS by epitaxial layer transfer from porous Si. In: Parthulik V, Canham L (eds) Proceedings of the 2nd international conference on porous semiconductors – science and technology, Technical University of Valencia, Valencia
Bergmann RB, Werner JH (2002) The future of crystalline silicon films on foreign substrates. Thin Solid Films 403–404:162
Brendel R (2004) Thin-film crystalline silicon mini-modules using porous Si for layer transfer. Solar Energy 77:969
Solanki CS, Bilyalov RR, Poortmans J (2004) Porous silicon layer transfer processes for solar cells. Sol Energ Mat Sol Cells 83:101
Fave A, Quoizola S, Kraiem J, Kaminski A, Lemiti M, Laugier A (2004) Comparative study of LPE and VPE silicon thin film on porous sacrificial layer. Thin Solid Films 451–452:308
Kraiem J, Papet P, Nichiporuk O, Amtablian S, Lelievre J-F, Quoizola S, Fave A, Kaminski A, Ribeyron P-J, Jaussaud C, Lemiti M (2006) ELIT Process: epitaxial layers for interdigitated back contacts solar cells transferred. In: 4th World conference on photovoltaic energy conversion, Waikoloa, Hawaii, USA, p 1126
Duffar Th (2010) Comprehensive review on grain boundary and twin structures in bulk photovoltaic silicon. Recent Res Dev Cryst Growth 5:61–11
Chen J, Sekikuchi T, Ito S, Yang D (2008) Carrier recombination activity and structural properties of small angle grain boundaries in mc-Si. Solid State Phenomena 131–133:9
Scott McHugo A, Thompson AC, Mohammed A, Lamble G, Périchaud I, Martinuzzi S, Werne M, Koch W (2001) Nanometer scale metal precipitates in mc-Si solar cells. J Appl Phys 89:4282
Arafume K, Sasaki T, Wakabayashi F, Terada Y, Oshida Y, Yamaguchi M (2006) Study on defects and impurities in cast-grown polycrystalline silicon substrates for dollar cells. Physica B 376–377:236
Dubois S, Palais O, Pasquinelli M, Martinuzzi S, Ribeyron P-J, Enjalbert N (2007) Effect of intentional iron contamination on multicrystalline silicon solar cell properties. J Appl Phys 102:083525
Martinuzzi S, Pizzini S (1994) Large grain polysilicon substrates for solar cells. In: Nijs J (ed) Advanced silicon and semiconducting silicon alloy based materials and devices. IOP, Bristol, pp 323–357
Kaminski A, Breitenstein O, Boyeaux JP, Rakotaniaina P, Laugier A (2004) J Phys Condens Matter 16:S9
Sopori B, Nilson T, Mclure M (1981) Diodes arrays for photovoltaic characterization of silicon substrates. J Electrochem Soc 128:215
El Ghitani H, Martinuzzi S (1989) Influence of dislocations on electrical properties of polycrystalline silicon. J Appl Phys 66:1717
El Ghitani H, Martinuzzi S (1989) Influence of dislocations on electrical properties of polycrystalline silicon experimental. J Appl Phys 66:1723
Kieliba T, Riepe S, Warta W (2006) Effect of dislocations on minority carrier diffusion length in practical solar cells. J Appl Phys 100:063706
Kieliba T, Riepe S, Warta W (2006) Effect of dislocations on open circuit voltage in crystalline silicon solar cells. J Appl Phys 100:093708
Mcdonald D, Cuevas A, Kinomura NY, Geerligs LJ (2005) Transition-metal profiles in a multicrystalline silicon ingot. J Appl Phys 97:033523
Martinuzzi S, Palais O, Perichaud I (2007) Segregation phenomena in large-size cast multicrystalline ingots. Sol Ener Mat Sol Cells 91:1172
Hanoka J (1986) Hydrogen passivation of polycrystalline silicon. In: Bowman RC (ed) Hydrogen in disordered and amorphous solids. Plenum, New York, p 81
Seifert W, Morgenstern G, Kittler M (1993) Influence of dislocation density on recombination at grain boundaries in mc-Si. Semicond Sci Technol 9:1687
Périchaud I, Martinuzzi S (1998) Recombination strength at intra and intergrain defects in mc-Si investigated by low temperature LBIC scan maps. In: Proceedings of MRS spring meeting, vol 510, San Francisco USA, p 633
Martinuzzi S, Gauthier M, Barakel D, Périchaud I, Le Quang N, Palais O, Goaer G (2007) Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell properties. Eur Phys J Appl Phys 40:83
Dube C, Hanoka J (1984) Hydrogen passivation of defects in silicon. Appl Phys Lett 45:1135
Hahn G, Sontag D, Seren S, Schönecker A, Burgers A, Stavola M (2004) Hydrogenation of mc-Si: the story continues. In: 19th EPVSEC, Paris, p 861
Pearton SJ, Corbett JW, Stavola M (1992) Hydrogen in crystalline semiconductors. Springer, Berlin
Narayan S, Wenham SR, Green MA (1986) High efficiency polycrystalline silicon solar cells using phosphorus pre-treatment. Appl Phys Lett 48:873
Périchaud I, Martinuzzi S, Stemmer M (1991) Additivity of phosphorus gettering and hydrogenation improvements in multicrystalline silicon cells. In: 22nd IEEE-PVSC, Las Vegas, p 877
Périchaud I, Martinuzzi S (1992) Effet Getter dans des plaquettes de silicium multicristallin par diffusion de phosphore : J de Phys III, 2:313
Périchaud I (2002) Gettering of impurities in solar silicon. Sol Energ Mat Sol Cells 72:315
Joshi SM, Ulrich M, Gösele UM, Tan TY (2001) Extended high temperature Al gettering for improvement and homogenisation of minority carriers in mc-Si. Sol Energ Mat Sol Cells 70:231
Boudaden J, Monna R, Loghmarti M, Muller JC (2002) Comparison of phosphorus gettering for different mc-Si. Sol Energ Mat Sol Cells 72:381
Estreicher SK, Hastings JL, Fedders L (1999) Hydrogen-defects interactions in Si. Mat Sci Eng B 58:130
Martinuzzi S, Périchaud I, Warchol F (2003) Hydrogen passivation of defects in mc-Si solar cells. Sol Energ Mat Sol Cells 80:343
Geerligs LJ, Komatsu Y, Röver I, Wambach K, Yamaga I, Saitoh T (2007) Precipitates and hydrogen passivation at crystal defects in n and p-type mc-Si. J Appl Phys 102:093702
Seibt M, Sattler A, Rudolf C, Vos O, Kveder V, Schröter W (2006) Gettering in silicon photovoltaics: current state and future perspectives. Phys Stat Sol (a) 4:696
Sheoran M, Upadhyaya A, Rohatgi A (2008) Bulk lifetime efficiency enhancement due to gettering and hydrogenation of defects during cast mc-Si solar cell fabrication. Solid State Electron 52:612
Tan J, Macdonald D, Bennet N, Kong D, Cuevas A, Romijn I (2007) Dissolution of metal precipitates in mc-Si during annealing and the protective effect of phosphorus emitters. Appl Phys Lett 91:043505
Dubois S, Enjalbert N, Warchol F, Martinuzzi S (2009) Is hydrogen or aluminium gettering the improvement key of mc-Si wafers? Mat Sci Eng B 151:239
Macdonald D, Geerligs LJ (2004) Recombination activity of interstitial iron and other transition metal point defects in n and p-type crystalline silicon. Appl Phys Lett 85:4061
Cuevas A, Kerr MJ, Samundsell C, Ferrazza F, Coletti G (2002) Millisecond minority carrier lifetime in n type multicrystalline silicon. Appl Phys Lett 81(26):4952
Libal J, Buck T, Kopecek R, Fath P, Wambach K, Acciari A, Binetti S, Geerligs L (2004) Properties of n-type mc-Si: lifetime, gettering and H-passivation. In: 19th EUPVSEC, Paris, France, p 1013
Schmiga C, Schmidt J, Gosh M, Metz A, Hezel R (2004) Gettering and passivation of recombination centres in n-type mc-Si. In: 19th EPUVSEC Paris, p 439
Cotter JE, Guo JH, Cousins PJ, Abbott MD, Chen FW, Fisher KC (2005) p-type vs. n-type silicon wafers. In: 15th Workshop on crystalline silicon solar cells, Vail, CO, (NREL), Golden, CO, pp 3–10
Martinuzzi S, Palais O, Ferrazza M (2005) N-type mc-Si wafers and rear junction solar cells. Eur Phys J Appl Phys 32:187–192
Istratov AA, Hieslmair H, Weber EW (1999) Iron and its complexes in silicon. Appl Phys A 69:13
Martinuzzi S, Warchol F, Dubois S, Enjalbert N (2009) Influence of chromium on minority carrier properties in intentionally contaminated n-type mc-Si wafers. Mat Sci Eng B 151:239
Kang JS, Schroder DK (1982) Gettering in silicon. J Appl Phys 65:2974
Woditsch P, Koch W (2002) Solar grade silicon feedstock supply for PV industry. Sol Energ Mat Sol Cells 72:11
Möller HJ, Funke C, Würzner S (2009) Melt growth of SiC and Si3N4 precipitates during crystallization of multicrystalline silicon for solar cells. In: 3rd international workshop on crystalline silicon solar cells, SINTEF/NTU, Trondheim Norway
Liu L, Nakano S, Kakimoto K (2008) Carbon concentration and particle precipitation during directional solidification of mc-Si for solar cells. J Cryst Growth 310:2192
Bauer J, Breitenstein O, Rakotoniaina JP (2007) Electronic activity of SiC precipitates in mc-solar silicon. Phys Stat Sol A 204:2190
Degoulange J, Périchaud I, Trassy C, Martinuzzi S (2008) Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock. Sol Energ Mat Sol Cells 92:1269–1273
Martinuzzi S, Périchaud I, Trassy C, Degoulange J (2009) n-type multicrystalline silicon wafers prepared from plasma torch refined upgraded metallurgical feedstock. Prog Photovolt Res Appl 17:297–305
Rodot M, Bourrée JE, Mesli A, Revel G, Kishore R, Pizzini S (1987) Al-related recombination centre in polycrystalline Si. J Appl Phys 62:2556
Rosenith O, Roth T, Glunz SW (2007) Determining the defect parameters of the deep aluminium related defect centre in silicon. Appl Phys Lett 91:122109
Pizzini S, Borsani F, Acciari M (1989) Effect of oxygen and carbon on the electrical properties of grain boundaries in silicon. Mat Sci Eng B4:353
Green MA (1995) Silicon solar cells, advanced principle and practice, centre for photovoltaic devices and systems. Bridge, Sydney
Sopori BL, Pryor RA (1983) Design of anti-reflection coatings for textured silicon solar-cells. Solar Cells 8:249
Duerinckx F, Noppe A, Choulat P, Szlufcik J, Nijs J, Habbraken B (2000) Advanced industrial process for large area screen printed mc-Si solar cells. In: 16th EU PVSEC, Glasgow, p 1301
Revesz AG (1973) Vitreous oxide antireflection films in high-efficiency solar cells. In: 10th IEEE PVSEC, Lisbon, p 180
Kern W, Tracy E (1980) Titanium dioxide antireflection coating for silicon solar cells by spray deposition. RCA Rev 41:19
Zhao J, Green MA (1991) Optimized antireflection coatings for high-efficiency silicon solar cells. IEEE Trans Electron Devices 38(8):1925–1934
Richards BS (2004) Comparison of TiO2 and other dielectric coatings for buried contact solar cells: a review. Prog Photovolt Res Appl 12:253–281
Streling HF, Swann RCG (1965) Chemical vapour deposition promoted by RF discharge. Solid State Electron 8:653
Bilyalov RR, Stalmans L, Schirone L, Lévy-Clément C (1999) Use of porous silicon antireflection coating in multicrystalline silicon solar cells. IEEE Trans Electron Devices 46(10):2035–2040
Strehlke S, Bastide S, Guillet J, Lévy-Clément C (2000) Design of porous silicon antireflection coatings for silicon solar cells. Mat Sci Eng B69–70:81–86
Green MA (1982) Solar cells, operating principles, technology and system applications. Prentice Hall, Englewood Cliffs. ISBN 0-13-82270
Hylton JD, Burgers AR, Sinke WC (2004) Alkaline etching for reflectance reduction in multicrystalline silicon solar cells. J Electrochem Soc 151(6):G408–G427
Nunoi T (1990) Cast polycrystalline silicon solar cell with grooved surface. In: 21st IEEE –PVSC, p 664
Seidel H, Csepregi L, Heuberger A, Baumgärtel H (1990) Anisotropic etching of crystalline silicon in alkaline solutions – I – orientation dependence and behavior of passivation layers. J Electrochem Soc 137(11):3612
Bastide S, Lévy-Clément C (2006) Electrochemical macroporous texturization of multicrystalline silicon. J New Mater Electrochem Syst 9(3):269
Luque A (1988) Solar cells and optics for photovoltaic concentration. Adam Hilger, Bristol, Chapter 14
Campbell P (1993) Enhancement of light absorption from randomising and geometric textures. J Opt Soc Am B 10:2410–2415
Hylton JD, Kinderman K, Burgers AR, Sinke WC, Bressers PMMC (1996) Uniform pyramid formation on alkaline-etched polished monocrystalline (100) silicon wafers. Prog Photovol Res Appl 4:435–438
Papet P, Nichiporuk O, Kaminski A, Roz Y, Kraiem J, Lelievre JF, Chaumart A, Fave A, Lemiti M (2006) Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching. Sol Energ Mat Sol Cells 90:2319
Hylton JD (2006) Light coupling and light trapping in alkaline textured multicrystalline silicon wafers for solar cells, PhD thesis, Utrecht. ISBN-10- 90-810463-1-4, ISBN—13-978-90-810463-1-2
Sarti D, Le QN, Bastide S, Goaer G, Ferry D (1995) Thin industrial mc-Si solar cells and improved optical absorption. In: 13th EUPVSEC, Nice, France, p 25
Einhaus R, Vazsonyi E, Szlufcik J, Nijs J, Mertens R (1997) In: 26th IEEE PV SC, Anaheim, CA, USA, p 170
Stocks MJ, Carr AJ, Blakers AW (1996) Texturing of polycrystalline silicon. Sol Energ Mat Sol Cells 40:33–42
Zhao J, Wan A, Green MA (1998) 19.8% Efficient multicrystalline silicon solar cells with “honeycomb” textured front surface. In: The 2nd World conference and exhibition on photovoltaic solar energy conversion, Vienna, Austria, July 1998, p 516
Gittlemen JM, Sichel EK, Lehman HW, Widner R (1979) Textured silicon – selective absorber for solar thermal conversion. Appl Phys Lett 35:742
Winderbaum S, Reinhold O, Yun F (1997) Reactive ion etching (RIE) as a method for texturing polycrystalline silicon solar cells. Sol Energ Mat Sol Cells 46:239
Inomata Y, Fukui K, Shirasawa K (1997) Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method. Sol Energ Mat Sol Cells 48:237, Part II
Koynov S, Brandt MS, Stutzmann M (2007) Black multi-crystalline silicon solar cells. Phys Stat Sol A 1(2):R53
Green MA (1987) High efficiency silicon solar cells. Trans Tech, Aedermannsdorf. ISBN 0-87849-537-1
Eades WD, Swanson RM (1985) Calculation of surface generation and recombination velocities at the Si-SiO2 interface. J Appl Phys 58:4267
Hoex B, Schmidt J, Bock R, Altermatt PP, Van de Sanden MM, Kessels MM (2007) Excellent passivation of highly doped p-type Si surfaces by the negatively charged dielectric Al2O3. Appl Phys Lett 91:112107
Lammert MD, Schwartz RJ (1997) The interdigitated back contact solar cell: a silicon solar cell for use in concentrated sunlight. IEEE Trans Electron Dev ED-24:337
Swanson RM, Beckwith SK, Crane RA, Eades WD, Sinton RA, Swirhun SE (1984) Interdigitated back contact solar cells. Trans Electron Devices ED-31:661
Van Kerschaver E, Beaucarne G (2006) Back-contact solar cells: a review. Prog Photovolt Res Appl 14:107
Gee J (1993) Emitter wrap through solar cells. In: 23rd IEEE PVSC, Louisville, p 265
Dicke J Jr, Schumacher O, Warta W, Glunz SW (2002) Analysis of one-sun monocrystalline rear-contacted silicon solar cells with efficiencies of 22.1%. J Appl Phys 91:4335
Hezel R, Meyer R, Metz A (2001) A new generation of crystalline silicon solar cells: Simple processing and record efficiencies for industrial-size devices. Sol Energ Mat Sol Cells 65:311
Sinton RA, Swanson RM (1990) Simplified backside-contact solar cells. IEEE Trans Electron Devices 37:348
Verlinden P (1991) High-efficiency backside contact solar cells with a self-aligned process and new texturization technique for silicon. In: 10th EUPVSEC, Lisbon, Portugal, p 246
Papet P, Kaminski A, Fourmond E, Calmon F, Lemiti M, Jozwik J (2008) Interdigitated back contact solar cells with SiO2 and SiN back surface passivation. J Non Cryst Solids 354(35–39):4341
Swanson RM (2006) A vision for crystalline silicon solar cells. Prog Photovolt Res Appl 14:443
Papet P, Nychyporuk O, Kaminski A, Lemiti M (2008) Realization of self-aligned back-contact solar cells. Electrochem Solid State Lett 11:H114
Bothe K, Schmidt J, Hezel R (2002) Effective reduction of the metastable defect concentration in boron-doped Czochralski silicon for solar cells. In: 29th IEEE-PVSC, New Orleans LA, USA, p 194
Lee JY, Peters S, Rein S, Glunz SW (2001) Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing. Prog Photovol Res Appl 9:417
Glunz SW, Rein S, Warta W, Knobloch J, Wettling W (2001) Degradation of carrier lifetime in Cz silicon solar cells. Sol Energ Mat Sol Cells 65:219
Lim B, Liu A, Macdonald D, Bothe K, Schmidt J (2009) Appl Phys Lett 95:232109
Shultz O, Glunz SW, Willeke GP (2004) mc-Si solar cells exceeding 20% in efficiency. Prog Photovol Res Appl 12:553
Inoue S, Sakamoto T, Komoda H, Ohwada H, Fukui K, Shirasawa K (2008) High efficiency mc-Si back contact solar cells. In: 23rd EUPVSEC, Valencia, p 988
Romijn IG, Mewe AA, Lamers M, Kossen E, Bende EE, Weeber AW (2008) An overview of MWT cells and evolution to the aspire concept : a new integrated mc-Si cell and module design for high efficiencies. In: 23rd EUPVSEC, Valencia, Spain, p 1000
Van der Heide A, Gribenski D, Szlufcik J (2009) Industrial fabrication of multicrystalline silicon MWT cells with interconnection flexibility. In: 24th EUPVSEC, Hamburg, Germany, p 942
Peters C, Engelhart P, Wade R, Jesswein R, Rychtarik D, Müller JW (2008) Alba-development for high efficiency mc-Si solar for industrial fabrication at Q-Cells. In: 23rd EUPVSEC, Valencia, Spain, p 1010
Hamamoto S, Ishihara T, Sato T, Fujikawa M, Morikawa H, Matsuno S, Fujioka H Arimoto Investigation for 19% at mc-Si solar cell by industrial probable approach. In: 24th EUVSEC, Hamburg, Germany, p 1410
Shi Z, Wenham S, Ji J (2009) Mass production of new high efficiency mc-Si solar cells with selective emitter. In: 24th EUPVSEC, Hamburg, Germany, p 1090
Kaes M, Hahn G, Metz A, Agostinelli G, Ma Y, Junge J, Zuschlag A, Groetschel D (2007) Progress in high efficiency processing of EFG silicon solar cells. In: 22rd EUPVSEC, Milan, Italy, p 897
Oberholtzner F, Dubé CM (2007) Efficiency improvements of string ribbon silicon solar cells. In: 22rd EUPVSEC, Milan, Italy, p 916
Seren S, Kaes M, Hahn G, Gutjahr A, Burgers AR, Schoneker A (2007) Efficiency potential of RGS Si from current R&D production. In: 22rd EUPVSEC, Milan, Italy, p 854
Kim DS, Yelundur V, Nakayashiki K, Rousaville B, Rohatgi A (2006) Ribbon Silicon solar cells with efficiencies over 18% by hydrogenation of defects. Sol Energ Mat Sol Cells 9(23):1227
Bronsveld PCP, Naber RCG, Geerligs LJ, Pozigun S, Syvertsen M, Knopf C, Kvande R (2009) p and n-type mono and mc-Si solar cells using blended upgraded metallurgical grade silicon. In: 24th EUPVSEC, Hamburg, Germany, p 1137
Braun S, Raab B, Kohler D, Seren S, Hahn G (2009) Comparison of buried contacts and screen printed 100% UMG solar cells resulting in 16.2% efficiency. In: 24th EPVSEC, Hamburg, Germany, p 1736
Kraiem J, Einhaus R, Lauvray H (2009) Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell, WO Patent number WO/2009/130,409
Veirman J, Dubois S, Enjalbert N, Garandet JP, Lemiti M, Heslinga DR (2010) Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donor activation. Solid State Electron 54:671
Dubois S, Enjalbert N, Garandet JP (2008) Effects of the compensation level on the carrier lifetime of crystalline silicon. Appl Phys Lett 93:032114
Macdonald D, Rougieux F, Cuevas A, Lim B, Schmidt J, Di Sabatino M, Geerligs LJ (2009) Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon. J Appl Phys 105:093705
De Ceuster D, Cousins P, Rose D, Vicente, Tipones P, Mulligan W (2007) Low cost, high volume production of >22% efficiency silicon solar cells. In: 22nd EUPVSEC, Milan, Italy, p 816
Nakamura K, Kohira M, Abiko, Isaka Y, Funakoshi Y, Machida T (2008) Development of back contact solar cells and modules in production line. In: 23rd EUPVSEC Valencia, Spain, p 1006
Granek F, Hermle M, Reichel C, Schlutz-Wittmann O, Glunz SW (2008) High efficiency back contact back junction silicon solar cell. In: 23rd EUPVSEC,Valencia, Spain, p 991
Mertens V, Bordihn S, Larionova Y, Harder NP, Brendel R (2009) The buried emitter solar cell concept: interdigitated back-junction structure. In: 24th EUPVSEC Hamburg, Germany, p 934
Okuda K, Okamoto H, Yamakawa H (1983) Amorphous Si-polycrystalline Si stacked solar cells having more than 12% conversion efficiency. Jpn J Appl Phys 22:L605
Fuhs W, Niemann K, Stuke J (1974) Heterojunctions of amorphous silicon and silicon single crystals. Bull Am Phys Soc 19:345
Wakisaka K, Taguchi M, Sawada T, Tanaka M, Matsuyama T, Matsuoka T, Tsuda S, Nakano S, Kishi Y, Kuwano Y (1991) More than 16% solar cells with a new “HIT” (doped a-Si/nondoped a-Si/crystalline Si) structure. In: Conference record of the 22nd IEEE-PVSC, Washington DC, p 887
Tanaka M, Taguchi M, Matsuyama T, Sawada T, Tsuda S, Nakano S, Hanafusa H, Kuwano Y (1992) Development of new a-Si/c-Si heterojunction solar cells, ACJ-HIT (artificially constructed junction–heterojunction with intrinsic thin layer). Jpn J Appl Phys 31:3518
Taguchi M, Kawamoto K, Tsuge S, Baba T, Sakata T, Morizane M, Uchihashi K, Nakamura N, Kiyama S, Oota O (2000) HITTM cells – high-efficiency crystalline Si cells with novel structure. Prog Photovolt Res Appl 8:503
Taguchi M, Terakawa A, Maruyama E, Tanaka M (2005) Obtaining a higher Voc in HIT cells. Prog Photovolt Res Appl 13:481
Taira S, Yoshimine Y, Baba T, Taguchi M, Kanno H, Kinoshita T, Sakata H, Maruyama E, Tanaka M (2007) Our approaches for achieving HIT solar cells with more than 23% efficiencies. In: 22nd EUPVSEC, Milan, Italy, p 932
Taguchi M, Tsunomura Y, Inoue H, Taira S, Nakashima T, Baba T, Sakata H, Maruyama E (2009) High-efficiency hit solar cell on thin (<100 μm) silicon wafer. In: 24th EUPVSEC, Hamburg, Germany, p 1690
Kleider JP, Gudovskikh AS, Roca Cabarrocas P (2008) Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements. Appl Phys Lett 92:162101
Schmidt M, Korte L, Laades A, Stangl R, Schubert Ch, Angermann H, Conrad E, Kv M (2007) Physical aspects of a-Si:H/c-Si hetero-junction solar cells. Thin Solid Films 515:7475
Favre W, Labrune M, Dadouche F, Gudovskikh AS, Roca i Cabarrocas P, Kleider JP (2010) Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static coplanar conductance measurements. Phys Stat Sol (c) 7:1037
Angermann H, Rappich J, Korte L, Sieber I, Conrad E, Schmidt M, Hübener K, Polte J, Hauschild J (2008) Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application. Appl Surf Sci 254:3615–3625
Moreno M, Labrune M, Roca i Cabarrocas P (2010) Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation. Sol En Mat Sol Cells 94:402
Das UK, Burrows MZ, Lu M, Bowden S, Birkmire RW (2008) Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films. Appl Phys Lett 92: 063504.1
Fesquet L, Olibet S, Vallat-Sauvain E, Shah A, Ballif C (2007) High quality surface passivation and heterojunction fabrication by VHF-PECVD deposition of amorphous silicon on crystalline Si: theory and experiment. In: 22nd EUPVSEC, Milan, Italy, p 1678
Schmidt M, Schoepke A, Korte L, Milch O, Fuhs W (2004) Density distribution of gap states in extremely thin a-Si:H layers on crystalline silicon wafers. J Non Cryst Solids 338–340:211
De Wolf S, Kondo M (2009) Nature of doped a-Si:H/c-Si interface recombination. J Appl Phys 105: 103707–1
Fujiwara H, Kondo M (2007) Impact of epitaxial growth at the heterointerface of a-Si: H/c-Si solar cells. Appl Phys Lett 90:013503–1
Korte L, Conrad E, Angermann H, Stangl R, Schmidt M (2007) Overview on a-Si:H/c-Si heterojunction solar cells – physics and technology. In: 22nd EUPVSEC, Milan, Italy, p 859
Mueller T, Schwertheim S, Meusinger K, Wdowiak B, Fahrner WR (2009) Application of plasma deposited nanocomposite silicon suboxides and microcrystalline silicon alloys to heterojunction solar cells. In: 34th IEEE-PVSC, Philadelphia, PA, USA, p 002378
Fesquet L, Olibet S, Vallat-Sauvain E, Shah A, Ballif C (2007) High quality surface passivation and heterojunction fabrication by VHF-PECVD deposition of amorphous silicon on crystalline Si: theory and experiment. In: Proceedings of the 22nd EUPVSEC, Milan, Italy, p 1678
Wang Q, Page MR, Iwaniczko E, Xu Y, Roybal L, Bauer R, To B, Yuan HC, Duda A, Hasoon F, Yan YF, Levi D, Meier D, Branz HM, Wang TH (2010) Efficient heterojunction solar cells on p-type crystal silicon wafers. Appl Phys Lett 96: 01350.1
Muñoz D, Ozanne AS, Harrison S, Danel A, Souche F, Denis C, Favier A, Nguyen N, Hickel PE, Mur P, Salvetat T, Ribeyron PJ (2010). Towards high efficiency on full wafer a-Si:H/c-Si heterojunction solar cells: 19.5% on 148 cm2. In: 35th IEEE – PVSC, Hawaï, to be published
Wünsch F, Citarella G, Abdallah O, Kunst M (2006) An inverted a-Si:H/c-Si hetero-junction for solar energy conversion. J Non Cryst Sol 352:1962
Lu M, Bowden S, Das UK, Birkmire RW (2007) A-Si/c-Si heterojunction for interdigitated back contact solar cell. In: 22nd EPVSEC, Milan, Italy, pp 924–927
Dicker J, Schumacher JO, Warta W, Glunz SW (2002) Analysis of one-sun monocrystalline rear-contacted silicon solar cells with efficiencies of 22.1%. J Appl Phys 91:4335
Stangl R, Bivour M, Conrad E, Didschuns I, Korte L, Lips K, Schmidt M (2007) RECASH a novel high efficiency buried grid rear contact amorphous/crystalline silicon heterojunction solar cell concept. In: 22nd EUPVSEC, Milan, Italy, p 870
Stangl R, Haschke J, Bivour M, Korte L, Schmidt M, Lips K, Rech B (2009) Planar rear emitter back contact silicon heterojunction solar cells. Sol Energ Mat Sol Cells 93:1900
Tucci M, Serenelli L, Salza E, De Luliis S, Geerligs LJ, Caputo D, Ceccarelli M, de Cesare G (2008) Back contacted a-Si:H/c-Si heterostructure solar cells. J Non Cryst Solids 354:2386
Swanson RM (2005) Approaching the 29% limit efficiency of silicon solar cells. In: 31st IEEE-PVSC, Orlando, Florida, USA, pp 889–894
Diouf D, Kleider JP, Desrues T, Ribeyron PJ (2009) Study of interdigitated back contact silicon heterojunctions solar cells by two-dimensional numerical simulations. Mat Sci Eng B 159–160:291
Desrues T, Ribeyron PJ, Vandeneynde A, Ozanne AS, Souche F, Muñoz D, Denis C, Diouf D, Kleider JP (2010) B-doped a-Si:H contact improvement on silicon heterojunction solar cells and interdigitated back contact structure. Phys Stat Sol (c) 7:1011–1015
Stelzner Th, Pietsch M, Andrä G, Falk F, Ose E, Christiansen S (2008) Silicon nanowire-based solar cells. Nanotechnology 19:295203
Guao JH, Tjahjono BS, Cotter JE (2005) In: 31st IEEE-PVSC, Orlando, Florida, USA, p 983
Schmiga C, Nagel H, Schmidt J (2006) Czochraslki silicon solar cells with screen printed Al alloyed rear emitter. Prog Photovolt Res Appl 14:533–539
Schmiga C, Hermle M, Glunz SW (2008) Towards 20% efficient n-type Si solar cells with screen printed Al-alloyed rear emitter. In: 23rd EUPVSEC, Valencia, Spain, p 982
Weeber A, Naber R, Guillevin N, Barton P, Carr A, Saynova D, Burgers T, Geerligs B (2009) Status of n-type solar cells for low cost industrial production. In: 24th EUPVSEC, Hamburg, Germany, p 891
Schmiga C, Hörteis M, Rauer M, Meyer K, Lossen J, Hermle M, Glunz J (2009) Large area n-type silicon solar cells with printed contacts and aluminium-alloyed rear emitter. In: 24th EUPVSEC, Hamburg, Germany, p 1167
Cong C, Posthuma N, Dross F, Giovanni F, Van Kerschaver, Beaucarne G, Poortmans J (2008) Comparison of n and p-type high efficiency silicon solar cell performance under low illumination conditions. In: 23rd EUPVSEC, Valencia, Spain, p 1360
Meier DL, Davis HP, Garcia RA, Salami J, Rohatgi A, Ebing A, Doshi P (2001) Aluminium alloy back p-n junction dendritic web silicon cell. Sol Energ Mat Sol Cells 65:621
Benick J, Hoex B, van de Sanden MCM, Kessels W, Schultz O, Glunz SW (2008) High efficiency n-type solar cells on Al2O3 passivated boron emitter. Appl Phys Lett 92:253504–253504-3
Mihailetchi VD, Komatsu K, Geerligs LJ (2008) Nitric acid pretreatment for the passivation of boron emitter for n-type base silicon solar cells. Appl Phys Lett 92:063510
Zhao J, Wang A (2006) Rear emitter n-type passivated emitter, rear totally diffused silicon solar cell structure. Appl Phys Lett 88:242102
Benick J, Hoex B, Dingemans G, Kessels W, Richter A, Hermle A, Glunz SW (2009) High efficiency n-type silicon solar cells with front side boron emitter. In: 24th EUPVSEC, Hamburg, Germany, p 863
Schutz-Kuchly T, Veschetti Y, Cabal R, Sanzone V, Heslinga D (2009) High efficiency on inversed emitter n-type Si solar cells. In: 24th EUPVSEC, Hamburg, Germany, p 955
Veschetti Y, Schutz-Kuchly T, Sanzone V, Heslinga D (2009) Electrical properties of n-type solar grade silicon – fabrication of solar cells and investigation of LID effect. In: 24th EUPVSEC, Hamburg, Germany, p 2209
Stoddard N, Wu B, Witting L, Wagener M, Park Y, Rozgonyi GA, Clark RF (2008) Casting single crystal silicon: novel defect profiles form BP Solar’s Mono 2TM wafers. Solid State Phenomena 131(1):8
Engelhart P, Zimmermann G, Klenke C, Wendt J, Kaden T, Junghänel M, Barkenfelt B, Petter K, Herman S, Schmidt S, Rychtarik D, Fischer M, Müller JW, Wawer P (2011) In: 37th IEEE- PVSC, Seattle, USA
Woehl R, Keding R, Rüdiger M, Gentischer H, Clement F, Wilde J, Biro D (2001) 20% efficient screen-printed and aluminium-alloyed back contact back junction and interconnection scheme of point-shaped metalized cells. In: 37th PVSC, Seattle, USA
Kiefer F, Ulzhofer C, Bendenmühl T, Harder NP, Brendel R, Mertens V, Bordihn S, Peters C, Müller JW (2011) In: 37th IEEE-PVSC, Seattle, USA
Weeber AW, Burgers AR, Guillevin N, Carr AJ, Barton PC, Geerligs LJ, Jingfeng X, Gaofer L, Weipeng S, Haijiao A, Zhiyan H, Venema PR, Vlooswijk AHG (2010) Recent developments of low cost industrial processing of n-type silicon solar cells. In: Proceedings of crystalline silicon solar cells 4, Taipei
Veschetti Y, Cabal R, Brand P, Sanzone V, Raymond G, Betinelli A (2011) High efficiency on boron emitter n-type Cz silicon solar cells with industrial process. In: 37th IEEE-PVSC, Seattle, USA
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Abbreviations
- EUPVSEC
-
European Photovoltaic Solar Energy Conferences
- IEEE-PVSC
-
Photovoltaic Specialist Conferences
- SOLMAT
-
Solar Energy Materials and Solar Cells
Rights and permissions
Copyright information
© 2013 Springer Science+Business Media New York
About this entry
Cite this entry
Martinuzzi, S. et al. (2013). Silicon Solar Cells , Crystalline. In: Richter, C., Lincot, D., Gueymard, C.A. (eds) Solar Energy. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-5806-7_461
Download citation
DOI: https://doi.org/10.1007/978-1-4614-5806-7_461
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-5805-0
Online ISBN: 978-1-4614-5806-7
eBook Packages: EnergyReference Module Computer Science and Engineering