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Springer Handbook of Electronic and Photonic Materials pp 565–580Cite as

Amorphous Semiconductors: Structure, Optical, and Electrical Properties

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Abstract

This chapter is devoted to a survey of the structural, optical and electrical properties of amorphous semiconductors on the basis of their fundamental understanding. These properties are important for various types of applications using amorphous semiconductors.

First, we review general aspects of the electronic states and defects in amorphous semiconductors, i.e., a-Si:H and related materials, and chalcogenide glasses, and their structural, optical and electrical properties.

Further, we survey the two types of phenomena associated with amorphous structure, i.e., light-induced phenomena, and quantum phenomena associated with nanosized amorphous structure. The former are important from the viewpoint of amorphous-silicon solar cells. The latter phenomena promise novel applications of amorphous semiconductors from the viewpoint of nanotechnology.

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Abbreviations

CPM:

constant-photocurrent method

DC:

direct current

DLTS:

deep level transient spectroscopy

DVD:

digital versatile disk

ENDOR:

electron–nuclear double resonance

ESR:

electron spin resonance spectroscopy

EXAFS:

extended X-ray absorption fine structure

FWHM:

full-width at half-maximum

ICTS:

isothermal capacitance transient spectroscopy

IR:

infrared

MD:

molecular dynamics

NMR:

nuclear magnetic resonance

PDS:

photothermal deflection spectroscopy

PL:

photoluminescence

RDF:

radial distribution function

SAXS:

small-angle X-ray scattering

SEM:

scanning electron microscope

TEM:

transmission electron microscope

TO:

transverse optical

TOF:

time of flight

VAP:

valence-alternation pairs

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Author information

Authors and Affiliations

  1. University of Tokyo, C-305, Wakabadai 2-12, Inagi, 206-0824, Tokyo, Japan

    Kazuo Morigaki Ph.D.

  2. Department of Applied Science, Yamaguchi University, 2-16-1 Tokiwadai, 755-8611, Ube, Japan

    Chisato Ogihara Dr.

Authors
  1. Kazuo Morigaki Ph.D.
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  2. Chisato Ogihara Dr.
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Corresponding authors

Correspondence to Kazuo Morigaki Ph.D. or Chisato Ogihara Dr. .

Editor information

Editors and Affiliations

  1. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9, Saskatoon, SK, Canada

    Safa Kasap Prof.

  2. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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Morigaki, K., Ogihara, C. (2006). Amorphous Semiconductors: Structure, Optical, and Electrical Properties. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_25

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