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Gallium Arsenide

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Book cover Springer Handbook of Electronic and Photonic Materials

Part of the book series: Springer Handbooks ((SHB))

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Abstract

The history of gallium arsenide is complicated because the technology required to produce GaAs devices has been fraught with problems associated with the material itself and with difficulties in its fabrication. Thus, for many years, GaAs was labelled as “the semiconductor of the future, and it will always be that way.” Recently, however, advances in compact-disc (CD) technology, fibre-optic communications and mobile telephony have boosted investment in GaAs research and development. Consequently, there have been advances in materials and fabrication technology and, as a result, GaAs devices now enjoy stable niche markets.

The specialised uses for GaAs in high-frequency and optoelectronic applications result from the physical processes of electron motion that allow high-speed and efficient light emission to take place. In this review, these advanced devices are shown to result from the physical properties of GaAs as a semiconducting material, the controlled growth of GaAs and its alloys and the subsequent fabrication into devices.

Extensive use is made of chapters from “Properties of Gallium Arsenide, 3rd edition” which I edited with the help of Prof. G. E. Stillman [23.1]. This book was written to reflect virtually all aspects of GaAs and its devices within a readable text. I believe that we succeeded in that aim and I make no apologies in referring to it. Readers who need specialised data, but not necessarily within an explanatory text, should refer to the Landolt-Börnstein, group III (condensed matter) data collection [23.2,3]. The sub-volumes A1α (lattice properties) and A2α (impurities and defects) within volume 41 are rich sources of data for all III–V compounds. Although there are no better sources than the original research papers, I have referred to textbooks where possible. This is because the presentation and discussion of scientific data is often clearer than in the original text, and these books are more accessible to students.

Gallium arsenide (GaAs) is one of the most useful of the III–V semiconductors. In this chapter, the properties of GaAs are described and the ways in which these are exploited in devices are explained. The limitations of this material are presented in terms of both its physical and its electronic properties.

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Abbreviations

BEP:

beam effective pressure

CL:

cathodoluminescence

CV:

chemical vapor

DH:

double heterostructure

DLTS:

deep level transient spectroscopy

DVD:

digital versatile disk

DXD:

double-crystal X-ray diffraction

EPD:

etch pit density

EPR:

electron paramagnetic resonance

FET:

field effect transistor

FTIR:

Fourier transform infrared

GDMS:

glow discharge mass spectrometry

GF:

gradient freeze

GRIN:

graded refractive index

GSMBE:

gas-source molecular beam epitaxy

HB:

horizontal Bridgman

HBT:

hetero-junction bipolar transistor

HEMT:

high electron mobility transistor

IC:

integrated circuit

IR:

infrared

JFET:

junction field-effect transistors

LEC:

liquid-encapsulated Czochralski

LED:

light-emitting diodes

LPE:

liquid phase epitaxy

LVM:

localized vibrational mode

MBE:

molecular beam epitaxy

MESFET:

metal-semiconductor field-effect transistor

MOCVD:

metal-organic chemical vapor deposition

MODFET:

modulation-doped field effect transistor

MOMBE:

metalorganic molecular beam epitaxy

MOVPE:

metalorganic vapor phase epitaxy

MQW:

multiple quantum well

NDR:

negative differential resistance

PL:

photoluminescence

PTIS:

photothermal ionisation spectroscopy

QW:

quantum well

RCLED:

resonant-cavity light-emitting diode

RF:

radio frequency

RG:

recombination–generation

RHEED:

reflection high-energy electron diffraction

RTA:

rapid thermal annealing

SCH:

separate confinement heterojunction

SEM:

scanning electron microscope

SIMS:

secondary ion mass spectrometry

TDCM:

time-domain charge measurement

TEM:

transmission electron microscope

TMA:

trimethyl-aluminum

TMG:

trimethyl-gallium

TMI:

trimethyl-indium

TSC:

thermally stimulated current

VCSEL:

vertical-cavity surface-emitting laser

VGF:

vertical gradient freeze

VPE:

vapor phase epitaxy

pBN:

pyrolytic boron nitride

pHEMT:

pseudomorphic HEMT

ppm:

parts per million

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  1. Department of Physics and Astronomy, University of Glasgow, Kelvin Building, G12 8QQ, Glasgow, UK

    Mike Brozel

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  1. Mike Brozel
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Correspondence to Mike Brozel .

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  1. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9, Saskatoon, SK, Canada

    Safa Kasap Prof.

  2. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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Brozel, M. (2006). Gallium Arsenide. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_23

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