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Silicon–Germanium: Properties, Growth and Applications

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Springer Handbook of Electronic and Photonic Materials

Part of the book series: Springer Handbooks ((SHB))

Abstract

Silicon–germanium is an important material that is used for the fabrication of SiGe heterojunction bipolar transistors and strained Si metal–oxide–semiconductor (MOS) transistors for advanced complementary metal—oxide–semiconductor (CMOS) and BiCMOS (bipolar CMOS) technologies. It also has interesting optical properties that are increasingly being applied in silicon-based photonic devices. The key benefit of silicon–germanium is its use in combination with silicon to produce a heterojunction. Strain is incorporated into the silicon–germanium or the silicon during growth, which also gives improved physical properties such as higher values of mobility. This chapter reviews the properties of silicon–germanium, beginning with the electronic properties and then progressing to the optical properties. The growth of silicon–germanium is considered, with particular emphasis on the chemical vapour deposition technique and selective epitaxy. Finally, the properties of polycrystalline silicon–germanium are discussed in the context of its use as a gate material for MOS transistors.

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Abbreviations

CMOS:

complementary metal-oxide-semiconductor

CVD:

chemical vapor deposition

HBT:

hetero-junction bipolar transistor

MBE:

molecular beam epitaxy

MOS:

metal/oxide/semiconductor

MOSFET:

metal/oxide/semiconductor field effect transistor

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Author information

Authors and Affiliations

  1. School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK

    Peter Ashburn Ph.D.

  2. School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK

    Darren Bagnall Dr.

Authors
  1. Peter Ashburn Ph.D.
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  2. Darren Bagnall Dr.
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Corresponding authors

Correspondence to Peter Ashburn Ph.D. or Darren Bagnall Dr. .

Editor information

Editors and Affiliations

  1. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9, Saskatoon, SK, Canada

    Safa Kasap Prof.

  2. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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© 2006 Springer-Verlag

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Ashburn, P., Bagnall, D. (2006). Silicon–Germanium: Properties, Growth and Applications. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_22

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