Abstract
The field of narrow-bandgap II–VI semiconductors is dominated by the compound Hg1−x Cd x Te (CMT), although some Hg-based alternatives to this ternary have been suggested. The fact that CMT is still the preeminent infrared (IR) material stems, in part, from the fact that the material can be made to cover all IR regions of interest by varying the x value. In addition, the direct band transitions in this material result in large absorption coefficients, allowing quantum efficiencies to approach 100%. Long minority carrier lifetimes result in low thermal noise, allowing high-performance detectors to be made at the highest operating temperatures reported for infrared detectors of comparable wavelengths. This chapter covers the growth of CMT by various bulk growth techniques (used mainly for first-generation infrared detectors), by liquid phase epitaxy (used mainly for second-generation infrared detectors), and by metalorganic vapor phase and molecular beam epitaxies (used mainly for third-generation infrared detectors, including two-color and hyperspectral detectors). Growth on silicon substrates is also discussed.
Keywords
- Molecular Beam Epitaxy
- Focal Plane Array
- Minority Carrier Lifetime
- Molecular Beam Epitaxy Growth
- CdZnTe Substrate
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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- ACRT:
-
accelerated crucible rotation technique
- CRA:
-
cast recrystallize anneal
- DAG:
-
direct alloy growth
- DET:
-
diethyl telluride
- DIPTe:
-
diisopropyltellurium
- DLHJ:
-
double-layer heterojunction
- DMCd:
-
dimethyl cadmium
- EPD:
-
etch pit density
- FPA:
-
focal plane arrays
- FTIR:
-
Fourier transform infrared
- FWHM:
-
full-width at half-maximum
- IMP:
-
interdiffused multilayer process
- IR:
-
infrared
- LPE:
-
liquid phase epitaxy
- MBE:
-
molecular beam epitaxy
- MLHJ:
-
multilayer heterojunction
- MOCVD:
-
metal-organic chemical vapor deposition
- MOVPE:
-
metalorganic vapor phase epitaxy
- MWIR:
-
medium-wavelength infrared
- QA:
-
quench anneal
- RDS:
-
reflection difference spectroscopy
- RHEED:
-
reflection high-energy electron diffraction
- RTD:
-
resistance temperature devices
- SEM:
-
scanning electron microscope
- SIMS:
-
secondary ion mass spectrometry
- SSR:
-
solid-state recrystallisation
- SWIR:
-
short-wavelength infrared
- THM:
-
traveling heater method
- TLHJ:
-
triple-layer graded heterojunction
- UV:
-
ultraviolet
- VB:
-
valence band
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Capper, P. (2006). Narrow-Bandgap II–VI Semiconductors: Growth. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_15
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