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Bulk Crystal Growth – Methods and Materials

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Book cover Springer Handbook of Electronic and Photonic Materials

Part of the book series: Springer Handbooks ((SHB))

Abstract

This chapter covers the field of bulk single crystals of materials used in electronics and optoelectronics. These crystals are used in both active and passive modes (to produce devices directly in/on bulk-grown slices of material, or as substrates in epitaxial growth, respectively). Single-crystal material usually provides superior properties to polycrystalline or amorphous equivalents. The various bulk growth techniques are outlined, together with specific critical features, and examples are given of the types of materials (and their current typical sizes) grown by these techniques. Materials covered range from Group IV (Si, Ge, SiGe, diamond, SiC), Group III–V (such as GaAs, InP, nitrides) Group II–IV (including CdTe, ZnSe, MCT) through to a wide range of oxide/halide/phosphate/borate materials. This chapter is to be treated as a snapshot only; the interested reader is referred to the remainder of the chapters in this Handbook for more specific growth and characterization details on the various materials outlined in this chapter. This chapter also does not cover the more fundamental aspects of the growth of the particular materials covered; for these, the reader is again referred to relevant chapters within the Handbook, or to other sources of information in the general literature.

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Abbreviations

ACRT:

accelerated crucible rotation technique

CRA:

cast recrystallize anneal

CVT:

chemical vapor transport

DMS:

dilute magnetic semiconductors

EFG:

film-fed growth

FZ:

floating zone

HDC:

horizontal directional solidification crystallization

IR:

infrared

KLN:

K3Li2Nb5O12

KTPO:

KTiOPO4

LEC:

liquid-encapsulated Czochralski

LED:

light-emitting diodes

MBE:

molecular beam epitaxy

MCT:

mercury cadmium telluride

MOVPE:

metalorganic vapor phase epitaxy

MQW:

multiple quantum well

QA:

quench anneal

RF:

radio frequency

SSR:

solid-state recrystallisation

STHM:

sublimation traveling heater method

THM:

traveling heater method

UV:

ultraviolet

VCZ:

vapor-pressure-controlled Czochralski

VGF:

vertical gradient freeze

VUVG:

vertical unseeded vapor growth

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  1. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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  1. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9, Saskatoon, SK, Canada

    Safa Kasap Prof.

  2. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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Capper, P. (2006). Bulk Crystal Growth – Methods and Materials. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_12

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