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Carbon Impurity in Crystalline Silicon

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Handbook of Photovoltaic Silicon

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Abstract

Carbon impurity contamination during growth of crystalline silicon has been systematically studied in a representative unidirectional furnace. Mechanism of carbon incorporation into silicon has been illuminated. To better understand the carbon contamination process, a global simulation in a unidirectional solidification furnace was implemented. The effects of flow rate and pressure on impurities were examined.

To reduce carbon contamination, an improved unidirectional solidification furnace with a crucible cover was designed. Results show that this improvement enables the production of a high-purity multicrystalline silicon crystal in a unidirectional solidification furnace. In addition, the material of crucible cover has a great influence on carbon contamination. Another possible contamination mechanism due to the reaction between silica crucible and the graphite susceptor has also been given. Results show that the crucible reaction with graphite susceptor has a marked effect on carbon impurity in the crystal.

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Author information

Authors and Affiliations

  1. The Institute of Technological Sciences, Wuhan University, Wuhan, China

    Bing Gao

  2. RIAM, Kyushu University, Fukuoka, Japan

    Koichi Kakimoto

Authors
  1. Bing Gao
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  2. Koichi Kakimoto
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Corresponding author

Correspondence to Bing Gao .

Editor information

Editors and Affiliations

  1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, China

    Deren Yang

Section Editor information

  1. Faculty of Physics - IV. Physical Institute - Ropers group, Georg-August-University Goettingen, Goettingen, Germany

    Michael Seibt

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Gao, B., Kakimoto, K. (2019). Carbon Impurity in Crystalline Silicon. In: Yang, D. (eds) Handbook of Photovoltaic Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-56472-1_21

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