Volume 7, Issue 36 | MRS Advances

Search all MRS Advances articles

Volume 7, Issue 36

December 2022

Ion Implantation Technology

62 articles in this issue

Introduction: Ion implantation technology special issue
Larry Larson
Susan Felch
Introduction 23 February 2023 Pages: 1231 - 1233
35 Years of challenge and innovation in ion implant
Anthony Renau
Review 09 November 2022 Pages: 1234 - 1240
Where is the annealing technology going for better device performance?
Kyoichi Suguro
Review 22 December 2022 Pages: 1241 - 1247
Development of ultra-high-current implanter for material modification process in next era devices
Hiroaki Kai
Yuya Uchida
Takeshi Matsumoto
Original Paper 23 February 2023 Pages: 1248 - 1252
Particle counts and size distributions after implantation with on-wafer graphite sources
Michael I. Current
Hideto Fujibuchi
Greg Lucchesi
Original Paper 28 December 2022 Pages: 1253 - 1256
High-temperature electrostatic chuck enabled by BN dielectrics
Wei Fan
Yuji Morikawa
Brian Kozak
Original Paper 30 November 2022 Pages: 1257 - 1259
Comparison of annealing quality after 3e15/cm² 50 keV BF₂⁺ implant between rapid thermal annealing and furnace annealing
Leonhard Sturm-Rogon
Alexander Burenkov
Wilfried Lerch
Original Paper Open access 05 December 2022 Pages: 1260 - 1264
The examination of source life and beam parameters of germanium implantation using hydrogen carrier gas
Weng Siong Chan
King Suen Lee
James Huang
Original Paper 14 November 2022 Pages: 1265 - 1269
Thermal budget reduction for spike anneals in conventional RTP
S. Hamm
M. Bauer
A. Wansidler
Original Paper 15 December 2022 Pages: 1270 - 1273
Parasitic side channel formation due to ion implantation isolation of GaN HEMT
Hao Yu
Uthayasankaran Peralagu
Nadine Collaert
Original Paper 12 December 2022 Pages: 1274 - 1278
Angle control requirements and solutions for enabling high aspect ratio structures
James DeLuca
Cheongil Ryu
Edward Eisner
Original Paper 05 December 2022 Pages: 1279 - 1284
Precise angle control for channeling using SS-UHE, a single-wafer ultrahigh-energy ion implanter
Hiroyuki Kariya
Sho Kawatsu
Mitsuaki Kabasawa
Original Paper 09 January 2023 Pages: 1285 - 1288
New ECR source ion implanter with advanced wafer temperature control for material modification
Sarko Cherekdjian
Preston Barrows
Ross Radel
Original Paper 11 November 2022 Pages: 1289 - 1294
Introducing the Purion H200™ single wafer high current implanter
A. Gupta
A. Ray
R. Rzeszut
Original Paper 05 December 2022 Pages: 1295 - 1300
A snapshot review on flash lamp annealing of semiconductor materials
Lars Rebohle
S. Prucnal
S. Zhou
Review Open access 02 December 2022 Pages: 1301 - 1309
Optimization of solid-phase epitaxial regrowth performed by UV nanosecond laser annealing
Angela Alvarez Alonso
Pablo Acosta Alba
Alain Claverie
Original Paper 21 December 2022 Pages: 1310 - 1314
On continuum simulations of the evolution of faulted and perfect dislocation loops in silicon during post-implantation annealing
Anna Johnsson
Original Paper Open access 17 January 2023 Pages: 1315 - 1320
Lateral mapping of damage patterns in plasma immersion ion-implanted silicon
O. Kéri
Á. Kerekes
Z. Zolnai
Original Paper 28 November 2022 Pages: 1321 - 1325
Measuring activation depth profiles in very highly doped ultra-thin semiconductors at sub-nm depth resolution
Abhijeet Joshi
Bulent M. Basol
Original Paper 05 January 2023 Pages: 1326 - 1330
The diffusion analysis of implanted heavy metals in 4H-SiC
Ryota Wada
Nariaki Hamamoto
Takashi Kuroi
Original Paper 15 December 2022 Pages: 1331 - 1337
Comparative evaluation of indirectly heated cathode DC ion source and inductively coupled plasma RF ion source for high current ion implanter
Jongjin Hwang
Myoungsoo Choi
Ho-Jun Lee
Original Paper 11 January 2023 Pages: 1338 - 1342
Risk of neutron generation with implantation of light ions
J. A. Turcaud
C. Heckman
J. Schuur
Original Paper 03 November 2022 Pages: 1343 - 1346
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
F. Torregrosa
M. Canino
R. Nipoti
Original Paper 15 December 2022 Pages: 1347 - 1352
Advanced process control method for inline isolation implant monitoring in III–V GaAs semiconductor fabrication
Sasha Kurkcuoglu
Shiban Tiku
Original Paper 20 December 2022 Pages: 1353 - 1357
Single implant damage accumulation and interactions between multiple implants
J. DeLuca
G. Cai
Original Paper 05 December 2022 Pages: 1358 - 1363
Defects and dopant behavior of a medium-dose range implant into heated silicon wafers
Tae-Hoon Huh
Akira Mineji
Yoji Kawasaki
Original Paper 22 December 2022 Pages: 1364 - 1368
A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond
Hao Yu
Marc Schaekers
Nadine Collaert
Review 21 November 2022 Pages: 1369 - 1379
Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis
John Borland
Shota Komago
Temel Buyuklimanli
Original Paper 23 February 2023 Pages: 1380 - 1389
Nitride stress inversion using plasma immersion ion implantation processes
L. Lachal
C. Plantier
F. Mazen
Original Paper 04 January 2023 Pages: 1390 - 1394
The performance of the fourth generation of safe delivery source® (SDS®4) package on AIBT iPulsar high current implanter
Ying Tang
Vito Nien
Brandon Ni
Original Paper 27 December 2022 Pages: 1395 - 1397
Performance improvement on SMIT SHX-III high current ion implanter through the use of EnrichedPlus ⁷²germanium tetrafluoride (EnPlus ⁷²GeF₄) and hydrogen (H₂) mixture gases
Ying Tang
Vito Nien
Eric Tien
Original Paper 21 November 2022 Pages: 1398 - 1400
Germanium ion implantation performance improvement on applied materials’ VIISta HCS high current implanter with use of germanium tetrafluoride (GeF₄) and hydrogen (H₂) mixture gases
Ying Tang
Chee Weng Leong
Eric Tien
Original Paper 28 November 2022 Pages: 1401 - 1403
Investigation of source materials, co-gases, and methods for aluminum ion implantation
Ying Tang
Ed Jones
Joseph Sweeney
Original Paper 08 December 2022 Pages: 1404 - 1406
Investigation of various source materials and co-gases for fluorine ion implantation performance improvement
Ying Tang
Joseph Despres
Joseph Sweeney
Original Paper 21 November 2022 Pages: 1407 - 1409
Performance and reliability of the fourth generation of Safe Delivery Source® (SDS®4) in the ion implantation application
Weihang Guan
Ying Tang
Kavita Murthi
Original Paper 07 December 2022 Pages: 1410 - 1417
Results and Adoption of Safe Delivery Source® (SDS®4) on VIISta® HCP
Barry Chambers
Douglas Newman
John Flood
Original Paper 21 November 2022 Pages: 1418 - 1420
Improving safety in dopant gas delivery systems
Josep Arnó
Mitchell H. Weston
Original Paper 10 February 2023 Pages: 1421 - 1425
Dopant gas purity and adsorbent stability
Josep Arnó
Omar K. Farha
Patrick E. Fuller
Original Paper 02 December 2022 Pages: 1426 - 1430
Temperature effect in high-dose, medium-energy implantation with single-wafer-type implanter
Takuya Sakaguchi
Kazutaka Tsukahara
Yoji Kawasaki
Original Paper 21 November 2022 Pages: 1431 - 1434
Enhancement of Al⁺ beam current in GSD III-180
Hiroki Murooka
Keiji Sakita
Hideo Tsurumi
Original Paper 18 November 2022 Pages: 1435 - 1437
A study of beam divergence effects on medium-dose channeling implants
Tae-Hoon Huh
Akira Mineji
Yoji Kawasaki
Original Paper 12 January 2023 Pages: 1438 - 1440
Ion erosion and elemental purity of deposited Si films on Al
Walt Wriggins
Matthew Wong
Michael I. Current
Original Paper 02 February 2023 Pages: 1441 - 1444
Angle-directed ion beams for localized deposition on high aspect ratio structures
Thomas E. Seidel
Michael I. Current
Original Paper 20 December 2022 Pages: 1445 - 1449
Ion erosion and particle release in fine graphite
Michael I. Current
Hideto Fujibuchi
Max Slaton
Original Paper 20 December 2022 Pages: 1450 - 1453
Profiles and defects in highly channeled and random beam orientation MeV dopant implants in Si(100)
Michael I. Current
Yoji Kawasaki
Viktor Samu
Original Paper 05 January 2023 Pages: 1454 - 1458
Individual dopant profiles in high energy multiple implantation under channeling conditions
Yoji Kawasaki
Takuya Sakaguchi
Haruka Sasaki
Original Paper 08 November 2022 Pages: 1459 - 1462
Beam shape control system by machine learning on the NISSIN BeyEX medium current ion implanter
Shinya Takemura
Shigeki Sakai
Eiichi Murayama
Original Paper 09 January 2023 Pages: 1463 - 1467
The scaled FinFET well formation using heated implantation
B. N. Guo
N. Pradhan
K. H. Shim
Original Paper 19 December 2022 Pages: 1468 - 1471
Analysis of dopant distribution profiles of very high energy implants
Serguei Kondratenko
Leonard Rubin
Original Paper 21 November 2022 Pages: 1472 - 1475
Neutron radiation due to high energy boron ion beams
Wilhelm Platow
Leonard Rubin
Steven Roberge
Original Paper 15 November 2022 Pages: 1476 - 1481