Modified sheet resistance and specific contact resistance of Ni-, Pt- and Ti-based contacts to n-type 3C-SiC Patrick W. LeechMartyn H. KibelPhillip Tanner Original Paper 27 May 2021 Pages: 445 - 449
Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices Yafei LiuHongyu PengMichael Dudley Original Paper 06 July 2021 Pages: 450 - 455
Investigation of MOCVD grown crack-free 4 μm thick aluminum nitride using nitrogen as a carrier gas Samiul HasanAbdullah MamunAsif Khan Original Paper 25 May 2021 Pages: 456 - 460
Correction to: Investigation of MOCVD grown crack‑free 4 μm thick aluminum nitride using nitrogen as a carrier gas Samiul HasanAbdullah MamunAsif Khan Correction 12 August 2021 Pages: 461 - 461