Volume 3, Issue 3

January 2018

Electronics, Magnetics and Photonics

9 articles in this issue

Analytic Modeling of Nonlinear Current Conduction in Access Regions of III-Nitride HEMTs
Kexin Li
Shaloo Rakheja
OriginalPaper 05 January 2018 Pages: 131 - 136
AlGaN/GaN HEMTs with 2DHG Back Gate Control
Wei-Tse Lin
Wen-Chia Liao
Yue-ming Hsin
OriginalPaper 26 December 2017 Pages: 137 - 141
AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer
Che-Ching Hsu
Pei-Chien Shen
Yue-Ming Hsin
OriginalPaper 28 December 2017 Pages: 143 - 146
Towards Two-Dimensional Oxides for Optoelectronic Applications
Jonathan C. Rackham
Bin Zou
Michelle A. Moram
OriginalPaper 20 February 2018 Pages: 147 - 151
Intlp compounds for Underwater Solar Energy Harvesting
Ahmed Zayan
Thomas E. Vandervelde
OriginalPaper 11 January 2018 Pages: 153 - 158
Room Temperature Ferromagnetism in Gadolinium-doped Gallium Nitride
Vishal G. Saravade
Cameron H. Ferguson
Ian T. Ferguson
OriginalPaper 09 January 2018 Pages: 159 - 164
Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique
Shumpei Ogawa
Tatsuya Kuroda
Hiroki Ishizaki
OriginalPaper 26 February 2018 Pages: 165 - 170
Electrical characterization of Si-doped n-type α-Ga₂O₃ on sapphire substrates
Takayuki Uchida
Kentaro Kaneko
Shizuo Fujita
OriginalPaper 11 January 2018 Pages: 171 - 177
Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers
M. Gaddy
V. Kuryatkov
S. Nikishin
OriginalPaper 26 February 2018 Pages: 179 - 184

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