Volume 1, Issue 2

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January 2016

Energy and Sustainability

16 articles in this issue

Performance and Reliability of SiC Power MOSFETs
Daniel J. Lichtenwalner
Brett Hull
John W. Palmour
OriginalPaper 07 January 2016 Pages: 81 - 89
Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
M. Dudley
H. Wang
S. G. Mueller
OriginalPaper 26 January 2016 Pages: 91 - 102
Development of the Nitride Laser Diode Arrays for Video and Movie Projectors
Piotr Perlin
Szymon Stańczyk
Mike Leszczynski
OriginalPaper 15 February 2016 Pages: 103 - 108
Thermal Properties of β-Ga₂O₃ from First Principles
Marco D. Santia
Nandan Tandon
J. D. Albrecht
OriginalPaper 06 January 2016 Pages: 109 - 114
Room Temperature Fabrication of (ZnO)_x(InN)_1-x films with Step-Terrace Structure by RF Magnetron Sputtering
Koichi Matsushima
Tomoaki Ide
Naho Itagaki
OriginalPaper 06 January 2016 Pages: 115 - 119
Scintillation of Un-doped ZnO Single Crystals
A. M. Colosimo
Jianfeng Ji
F. A. Selim
OriginalPaper 07 January 2016 Pages: 121 - 126
Metallic β-Nb₂N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates
D. Scott Katzer
Neeraj Nepal
Matthew T. Hardy
OriginalPaper 15 January 2016 Pages: 127 - 132
Influence of Al, In codoping in enhancing the Figure of Merit of ZnO thin films for TCO Applications
Vinoth Kumar Jayaraman
Arturo Maldonado Alvarez
Maria De la Luz Olvera Amador
OriginalPaper 19 January 2016 Pages: 133 - 139
Reactive sputtering of III-N materials for applications in electronic devices
Sameer Joglekar
Mohamed Azize
Tomás Palacios
OriginalPaper 19 January 2016 Pages: 141 - 146
GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz
P. C. Chao
Kanin Chu
John Blevins
OriginalPaper 07 March 2016 Pages: 147 - 155
Modified Linear Transmission Line Model Test Structure for Determining Specific Contact Resistance
G. K. Reeves
Y. Pan
A. S. Holland
OriginalPaper 01 February 2016 Pages: 157 - 162
Effect of rapid thermal treatments on the physical properties of Cobalt Doped ZnO Films
C. Davesnne
C. Frilay
X. Portier
OriginalPaper 01 February 2016 Pages: 163 - 168
Incorporation of Mg into thick free-standing HVPE GaN
M. E. Zvanut
J. Dashdorj
K. Udwary
OriginalPaper 04 February 2016 Pages: 169 - 174
Bandgap Energies of Cubic Al_xGa_1-xN_yAs_1-y Calculated by Means of the Dielectric Method
Hiroyuki Naoi
Takeyuki Matsumoto
OriginalPaper 05 February 2016 Pages: 175 - 180
Near-Junction Microfluidic Cooling for Wide Bandgap Devices
Avram Bar-Cohen
Joseph J. Maurer
Abirami Sivananthan
OriginalPaper 09 February 2016 Pages: 181 - 195
Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness
X. C. Wei
L. Zhang
J. M. Li
OriginalPaper 17 February 2016 Pages: 197 - 202
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Volume 1, Issue 2

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