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MRS Advances - Volume 7 Editorial Board

Volume 7 Editors

Editor in Chief

David F. Bahr, Purdue University, USA


Edited by

Editorial Board

Viktoriia Babicheva, University of New Mexico, USA

Susana Diaz-Amaya, Bayer, USA

Meenakshi Dutt, Rutgers University, USA

Nicholas Glavin, Air Force Research Lab, USA

Norbert Huber, Helmholtz-Zentrum Hereon, Germany

Javier Illescas, Instituto Tecnológico de Toluca, Mexico

Praveen Kumar, Indian Institute of Science, India

Ruth Schwaiger, Forschungszentrum Jülich, Germany


Volume 7 | Principal Editors

Robert Abbel, New Zealand Forest Research Institute (Scion), New Zealand

Björn Alling, Linköping University, Sweden

Jean-Charles Arnault, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), France

Mario Caironi, Istituto Italiano di Tecnologia, Italy

Artur Davoyan, University of California, Los Angeles, USA

Chiara Ghezzi, UMass Lowell, USA

Krzysztof Gofryk, Idaho National Laboratory, USA

Ivan Gordon, imec, Belgium

Seung Min Han, Korea Advanced Institute of Science and Technology, South Korea

Anna Isaeva, The University of Amsterdam, The Netherlands

Hyunhyub Ko, Ulsan National Institute of Science and Technology, South Korea

N. M. Anoop Krishnan, Indian Institute of Technology Delhi, India

Christian Leinenbach, Empa-Swiss Federal Laboratories for Materials Science and Technology, Switzerland

Shangchao Lin, Shanghai Jiao Tong University, China

Yuzi Liu, Argonne National Laboratory, USA

Christine Luscombe, University of Washington, USA

Veruska Malavé, National Institute of Standards and Technology, USA

Zebing Mao, Shibaura Institute of Technology, Japan

Alex Martinson, Argonne National Laboratory, USA

John McCloy, Washington State University, USA

Thompson Mefford, Clemson University, USA

Shashank Misra, Sandia National Laboratories, USA

Kevin Musselman, University of Waterloo, Canada

Tianxiang Nan, Tsinghua University, China

Roger Narayan, North Carolina State University, USA

Marc in het Panhuis, University of Wollongong, Australia

Eun Soo Park, Seoul National University, South Korea

Junghyun Park, Samsung Electronics, USA

Yuyan Shao, Pacific Northwest National Laboratory, USA

Radwanul Hasan Siddique, Samsung Electronics America, USA

Fernando Sigoli, The University of Campinas, Brazil

Giulia Tagliabue, EPFL, Switzerland

Jeremy Theil, Mountain View Energy, USA

Fumiyoshi Tochikubo, Tokyo Metropolitan University, Japan

Rama Vasudevan, Oak Ridge National Laboratory, USA

Claire Villevieille, Laboratoire d'Electrochimie et Physicochimie des Matériaux et des Interfaces, France

Hui Wang, University of Louisville, USA

Oliver Williams, Cardiff University, UK

Thierry Wiss, European Commission Joint Research Centre, Germany

Annie Xian Zhang, Stevens Institute of Technology, USA

Huichan Zhao, Tsinghua University, China

Yangying Zhu, University of California, Santa Barbara, USA

Volume 7 | Scientific Basis for Nuclear Waste Management XLV

Stefan Neumeier, Forschungszentrum Jülich, Germany

Volume 7 | IMRC 2022

Oswaldo Burciaga Díaz, Instituto Tecnológico de Saltillo, Mexico

Epifanio Cruz, Universidad Nacional Autonoma de Mexico, Mexico

Jose M Herrera-Ramirez, Centro de Investigación en Materiales Avanzados (CIMAV), Mexico

Javier Illescas, Instituto Tecnológico de Toluca, Mexico

N M Anoop Krishnan, Indian Institute of Technology-Delhi, India

Carlos A. León Patiño, Universidad Michoacana, Mexico

Eddie Lopez-Honorato, Oak Ridge National Laboratory, USA

Issis Claudette Romero Ibarra, Instituto Politécnico Nacional, Mexico

Hector Siller, University of North Texas, USA

Sylvia Thomas, University of South Florida, USA

Javier Rodriguez Varela, Javier Rodriguez-Varela, Cinvestav Unidad Saltillo, Mexico

Volume 7 | Research snapshots from the 40th year of the Semiconductor Research Corporation

Victor Zhirnov, Semiconductor Research Corporation, USA

Volume 7 | Ion Implantation Technology

Larry Larson, Texas State University, USA

Susan Felch, Susan Felch Consulting, USA

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