Graphene-based vertical-junction diodes and applications Suk-Ho Choi Review Articles 19 September 2017 Pages: 311 - 318
Effect of device package on optical, spectral, and thermal properties of InGaN/GaN near-ultraviolet lateral light-emitting diodes Soo Hyun LeeXiang-Yu GuanJae Su Yu OriginalPaper 19 September 2017 Pages: 319 - 324
Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate Won-Ju ChoMin-Ju Ahn OriginalPaper 19 September 2017 Pages: 325 - 328
Enhanced performance of amorphous In-Ga-Zn-O thin-film transistors using different metals for source/drain electrodes Ju-Young PyoWon-Ju Cho OriginalPaper 19 September 2017 Pages: 329 - 334
Effect of additives on the properties of printed ITO sensors Jieun KooSeok-hwan LeeJiho Chang OriginalPaper 19 September 2017 Pages: 335 - 339
GaN nanorod arrays as a high-stability field emitter H. W. SeoL. W. TuW. K. Chu OriginalPaper 19 September 2017 Pages: 340 - 344
Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector Woo Seop JeongDae-sik KimDongjin Byun OriginalPaper 19 September 2017 Pages: 345 - 348
Effects of P3HT concentration on the electrical properties of the Au/PEDOT:PSS/P3HT/n-GaN hybrid junction structure Ji-yeon NohHa Young LeeDong Han Ha OriginalPaper 19 September 2017 Pages: 349 - 354
Velocity overshoot degradation in short-channel AlGaAs/GaAs HEMTs due to the minimum electron acceleration lengths Jaeheon Han OriginalPaper 19 September 2017 Pages: 355 - 359
Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing Hyung Sup YoonByoung-Gue MinJong Won Lim OriginalPaper 19 September 2017 Pages: 360 - 364
Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications Jong-Min LeeHo-Kyun AhnJong-Won Lim OriginalPaper 19 September 2017 Pages: 365 - 369
