Influence of inert gas pressure on deposition rate during pulsed laser deposition T. ScharfH.U. Krebs Pages: 551 - 554
Complex dielectric permittivities of the Ag2O-Ag2CO3 system at microwave frequencies and temperatures between 22 °C and 189 °C J.E. Atwater Pages: 555 - 558
The gas-sensing potential of nanocrystalline SnO2 produced by a mechanochemical milling via centrifugal action Ü. Kersen Pages: 559 - 563
Critical dimensions for YBCO islands grown by pulsed laser deposition C.M. GilmoreJ. Kim Pages: 565 - 571
Optical gain of interdiffused GaInNAs/GaAs quantum wells M.C.Y. ChanC. SuryaP.K.A. Wai Pages: 573 - 576
Anisotropy of atomic bonds formed by p-type dopants in bulk GaN crystals K. Lawniczak-JablonskaT. SuskiI. Grzegory Pages: 577 - 583
The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states G.F. CerofoliniC. BongiornoO. Viscuso Pages: 585 - 590
Comparison of different gettering techniques for Cu–p+ versus polysilicon and oxygen precipitates R. HoelzlK.J. RangeL. Fabry Pages: 591 - 595
Preparation and characterisation of compositionally graded BaxSr1-xTiO3 thin films S.U. AdikaryA.L. DingH.L.W. Chan Pages: 597 - 600
Processing effects on the microstructure and ferroelectric properties of strontium bismuth tantalate thin films R. JiménezC. AlemanyJ. Mendiola Pages: 607 - 615
Atomic force microscopy studies on phase transitions and surface morphology transformation of CMTC crystals X.N. JiangD. XuM.H. Jiang Pages: 617 - 620
X-ray diffraction imaging investigation of silicon carbide on insulator structures S. MilitaY. Le TiecF. Letertre Pages: 621 - 627
Room-temperature photoluminescence in amorphous SrTiO3– the influence of acceptor-type dopants L.E.B. SoledadeE. LongoJ.A. Varela Pages: 629 - 632
Pulsed UV-laser-induced chemistry of perfluoropolyether lubricant film L. ZhuT. LiewT.C. Chong Pages: 633 - 636
Deep UV laser induced luminescence in oxide thin films J. HeberC. MühligN. Kaiser Rapid communication Pages: 637 - 640