Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors E. F. SchubertK. PloogK. Heime Invited Paper Pages: 63 - 76
Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements J. P. RivièreJ. DelafondJ. F. Dinhut Contributed Papers Pages: 77 - 82
Far-infrared donor spectroscopy of MBE-GaAs F. KucharR. MeiselsH. Burkhard Contributed Papers Pages: 83 - 85
Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs J. J. HarrisD. E. AshenfordB. A. Joyce Contributed Papers Pages: 87 - 92
Glass-forming ability in laser quenched transition-metal Alloys K. AffolterM. von Allmen Contributed Papers Pages: 93 - 96
Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy H. JungA. FischerK. Ploog Contributed Papers Pages: 97 - 105
Laser-induced free-carrier absorption in Si single crystal M. G. GrimaldiP. BaeriE. Rimini Contributed Papers Pages: 107 - 111
Derivation of a modified paraxial formalism for two-dimensional trajectories in electron and ion sources of non-simple geometries N. M. MiskovskyP. H. CutlerT. E. Feuchtwang Contributed Papers Pages: 113 - 120
Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements N. A. StolwijkB. SchusterJ. Hölzl Contributed Papers Pages: 133 - 140