Measuring the Magnetooptic Kerr effect by diffraction J. KranzCh. Schrödter Contributed Papers Pages: 59 - 63
Electron transport in sub-micron GaAs channels at 300 K B. R. NagM. Deb Roy Contributed Papers Pages: 65 - 70
Incorporation of oxygen atoms into As+ implanted silicon during cw CO2 laser annealing in O2 Ian W. Boyd Contributed Papers Pages: 71 - 74
The electronic structure of GaP (110) and Cu-Phthalocyanine overlayers studied by ellipsometry A. RitzH. Lüth Contributed Papers Pages: 75 - 80
Recovery of concentration spectra of binary solids from diffraction profiles by means of band matrices P. SchattschneiderA. Wagendristel Contributed Papers Pages: 81 - 86
The characteristics and properties of optimised amorphous silicon field effect transistors K. D. MackenzieA. J. SnellW. E. Spear Contributed Papers Pages: 87 - 92
Relaxation phenomena in amorphous Co75−x Mn x B25 induced by stress annealing A. EhrhardtR. KernU. Gonser Contributed Papers Pages: 93 - 95
On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon T. Y. TanU. GöseleF. F. Morehead Contributed Papers Pages: 97 - 108
Generation of dislocations introduced by bending stress in a Si wafer R. SawadaT. KarakiJ. Watanabe Contributed Papers Pages: 109 - 114
Low-frequency electrical resistance of iron, cobalt, and nickel in the vicinity of their Curie temperatures B. C. SalesM. B. Maple Contributed Papers Pages: 115 - 117