Majority carrier transistor based on voltage-controlled thermionic emission R. F. KazarinovSerge Luryi Invited Paper Pages: 151 - 160
A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3 Y. MatsuiM. OkuyamaY. Hamakawa Contributed Papers Pages: 161 - 166
The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy H. KünzelJ. KnechtK. Ploog Contributed Papers Pages: 167 - 173
Vacancy-impurity interaction in dilute iron alloys by positron annihilation W. TriftshäuserH. MatterJ. Winter Contributed Papers Pages: 179 - 187
Energy and spatial redistributions of the particle flux resulting from its interaction with the scattering center L. L. BalashovaA. I. DodonovV. A. Molchanov Contributed Papers Pages: 189 - 194
Velocity auto-correlation and hot-electron diffusion constant in GaAs and InP M. Deb RoyB. R. Nag Contributed Papers Pages: 195 - 204