On the use of single-photon ionization for inorganic surface analysis C. H. Becker Part I Pages: 3 - 6
Saturation and fragmentation in non resonant laser postionization of sputtered atoms and molecules K. FranzrebA. WucherH. Oechsner Part I Pages: 7 - 11
The emission of secondary clusters and its relevance for analytical Laser-SNMS W. HusinskyP. WurzG. Betz Part I Pages: 12 - 16
SNMS studies of ULSI gate interconnection structures L. MoroP. LazzeriM. Anderle Part I Pages: 20 - 24
Interaction of Pd-overlayers with SnO2: comparative XPS, SIMS, and SNMS studies J. F. GeigerP. BeckmannW. Göpel Part I Pages: 25 - 30
Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs M. GerickeT. LillA. Hupfer Part I Pages: 31 - 34
Influence of the primary ion incidence angle on secondary ion emission in SIMS with nitric oxide as reactant gas W. SeidelW. RybczynskiD. Thiel Part I Pages: 35 - 42
Angle-dependent SIMS artifact in the analysis of InP/InGaAs layers I. WeitzelW. HöslerR. v. Criegern Part I Pages: 43 - 48
Dynamic range optimization in SIMS analyses of arsenic and antimony dopants in silicon K. WangemannR. Lange-Gieseler Part I Pages: 49 - 53
Quadrupole mass spectrometer for residual gas analysis and SIMS application Gy. HársA. SólyomJ. Giber Part I Pages: 57 - 59
Extended SIMS capabilities by sample preparation R. v. CriegernR. Lange-GieselerH. Zeininger Part I Pages: 60 - 65
Depth profile investigations of metallic layer contacts to GaAs(100) and InP(100) by means of Auger Electron Spectroscopy and sputter technique S. SteinA. ReifH. Störi Part I Pages: 66 - 69
Evaluation of Auger Electron Spectroscopy (AES) depth-profiles by application of Factor Analysis E. OesterschulzeK. MaßeliR. Kassing Part I Pages: 70 - 73
Electron Spectroscopy (ESCA) on technical oxidic thin films prepared by different methods O. AndersonK. Bange Part I Pages: 74 - 78
AES and CEMS analysis of the formation of layers on Si steel under thermal treatment in a flux of H2/water vapour T. TernesW. MeiselP. Gütlich Part I Pages: 79 - 82
X-ray induced fluorescence spectrometry at grazing incidence for quantitative surface and layer analysis U. WeisbrodR. GutschkeH. Schwenke Part I Pages: 83 - 86
Characterization of V2O5/SiO2- and TiO2/SiO2-mixed gel catalysts by Raman spectroscopy M. Schraml-MarthA. WokaunA. Baiker Part I Pages: 87 - 91
In situ measurement of etch velocity of layers on silicon H. ProkscheG. NagorsenD. Roß Part I Pages: 92 - 94
Optical reflection spectroscopy of mineral and ice surfaces in comet simulation experiments E. LangenscheidtK. Roessler Part I Pages: 95 - 100
Application of infrared luminescence microscopy for ion beam diagnostics and for measurement of ion dose densities from 109 to 1016 cm−2 O. HoinkisK. MietheW. H. Gries Part I Pages: 101 - 105
Interface analysis for solid state electrochemical devices and chemical sensors H. D. WiemhöferW. Göpel Part I Pages: 106 - 111
Quantitative characterization of oxygen precipitates in CZ-silicon with secondary ion mass spectrometry S. GaraG. StingederM. Grasserbauer Part I Pages: 112 - 115
A standard form of spectra for quantitative ESCA-analysis K. BerresheimM. Mattern-KlossonM. Wilmers Part I Pages: 121 - 124
Bulk trace and distribution analysis in refractory and hard metals. examples from research and development and applications in quality assurance Peter WilhartitzHugo M. Ortner Part I Pages: 125 - 130
Surface phase analysis by conversion X-ray and conversion electron Mössbauer spectroscopy Ulrich GonserPeter Schaaf Part I Pages: 131 - 135
Quantitative depth-profiling with GDOS: application to ZnNi-electrogalvanized steel sheets J. AngeliT. KaltenbrunnerF. M. Androsch Part I Pages: 140 - 144
Investigations of the distribution of elements in phases present in G-AlMg5Si cast alloy with EDX/WDX spectrometers and AES Joze PirsAnton Zalar Part I Pages: 145 - 149
Investigation of the deuterium solubility in niobium using secondary ion mass spectrometry (SIMS) Harald ZüchnerThomas Brüning Part I Pages: 150 - 153