Solution growth and some properties of GaP bulk crystals H. FabigL. Hildisch OriginalPaper Pages: 5 - 11
Epitaxial growth of AIIIBV semiconductors from vapour phase T. GörögE. Lendvay OriginalPaper Pages: 13 - 28
Investigation of the doping level in overcompensated p-GaP layers grown by liquid phase epitaxy J. PfeiferL. CsontosB. Szentpáli OriginalPaper Pages: 29 - 42
On investigations of inhomogeneities in GaP monocrystals by cathodoluminescence in the scanning electron microscope H. MennigerH. RaidtG. Voigt OriginalPaper Pages: 43 - 48
On the formation of interfaces in real GaP-Au Schottky barriers M. Somogyi OriginalPaper Pages: 49 - 54
Electrical characterization of GaAs epitaxial layers grown onto a conductive substrate L. GútaiT. Görög OriginalPaper Pages: 69 - 77
Characterization of GaAs epitaxial layers and diode chips for microwave device purposes B. PődörI. MojzesB. Szentpáli OriginalPaper Pages: 79 - 89
Determination of optical absorption of indirect GaAs1−xPx from photoluminescence measurement M. Gál OriginalPaper Pages: 91 - 95
Complex capacitance spectroscopy of impurity levels in semiconductor junctions P. Krispin OriginalPaper Pages: 97 - 102
Remarks on space-charge spectroscopy; An analysis on the temperature dependence of the junction capacitance G. FerencziJ. KissM. Somogyi OriginalPaper Pages: 103 - 109