1. Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy

   • V. A. Zinov’ev
   • A. V. Dvurechenskii
   • A. V. Mudryi

   Fundamental Problems of Epitaxy of Semiconductor Nanoheterostructures 10 December 2013 Pages: 423 - 428

2. Growth of AlGaN/GaN heterostructures with a two-dimensional electron gas on AlN/Al₂O₃ substrates

   • T. V. Malin
   • V. G. Mansurov
   • K. S. Zhuravlev

   Fundamental Problems of Epitaxy of Semiconductor Nanoheterostructures 10 December 2013 Pages: 429 - 433

3. Formation and structural features of silicon quantum dots in germanium

   • N. P. Stepina
   • A. F. Zinov’eva
   • S. V. Gaponenko

   Fundamental Problems of Epitaxy of Semiconductor Nanoheterostructures 10 December 2013 Pages: 434 - 439

4. Two-dimensional strain distribution in elastically anisotropic heterostructures

   • A. V. Nenashev
   • A. A. Koshkarev
   • A. V. Dvurechenskii

   Numerical Modeling of Nanoheterostructure Growth, Strain Fields, and Energy Spectrum 10 December 2013 Pages: 440 - 449

5. Applicability of the six-band kp -model equations to semiconductor heterostructures

   • V. P. Zhukov
   • M. P. Fedoruk
   • A. V. Dvurechenskii

   Numerical Modeling of Nanoheterostructure Growth, Strain Fields, and Energy Spectrum 10 December 2013 Pages: 450 - 460

6. Three-dimensional model of heteroepitaxial growth of germanium on silicon

   • S. A. Rudin
   • V. A. Zinov’ev
   • A. V. Dvurechenskii

   Numerical Modeling of Nanoheterostructure Growth, Strain Fields, and Energy Spectrum 10 December 2013 Pages: 461 - 466

7. Ge/Si heterostructures with Ge quantum dots for mid-infrared photodetectors

   • A. I. Yakimov

   Nanoheterostructures for Photoelectric Converters and Photodetector Tubes 10 December 2013 Pages: 467 - 475

8. HgCdTe structures for dual-band photodetectors operating in the 3–5 and 8–12 µm spectral ranges

   • V. S. Varavin
   • S. A. Dvoretskii
   • I. N. Uzhakov

   Nanoheterostructures for Photoelectric Converters and Photodetector Tubes 10 December 2013 Pages: 476 - 484

9. High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy

   • A. V. Predein
   • Yu. G. Sidorov
   • I. V. Marchishin

   Nanoheterostructures for Photoelectric Converters and Photodetector Tubes 10 December 2013 Pages: 485 - 491

10. Terahertz detectors based on Pb_1−x Sn _x Te:In films

    • A. N. Akimov
    • D. V. Ishchenko
    • V. S. Epov

    Nanoheterostructures for Photoelectric Converters and Photodetector Tubes 10 December 2013 Pages: 492 - 497

11. Spectroscopy of single InAs quantum dots

    • A. V. Gaisler
    • A. S. Jaroshevich
    • A. L. Aseev

    Fundamental Problems of Photonic Devices Based on Semiconductor Nanoheterostructures 10 December 2013 Pages: 498 - 503

12. Surface-enhanced Raman scattering by semiconductor nanostructures

    • A. G. Milekhin
    • L. L. Sveshnikova
    • D. R. T. Zahn

    Fundamental Problems of Photonic Devices Based on Semiconductor Nanoheterostructures 10 December 2013 Pages: 504 - 513

13. Microsecond Lifetime of Exciton Spin Polarization in (In,Al)As/AlAs Quantum Dots

    • T. S. Shamirzaev
    • D. Dunker
    • M. Bayer

    Semiconductor Nanoheterostructures for Spintronics 10 December 2013 Pages: 514 - 519

14. SOI nanowire transistor for detection of D-NFATc1 molecules

    • Yu. D. Ivanov
    • T. O. Pleshakova
    • A. I. Archakov

    Fundamental Problems of Biosensorics on the Basis of Nanoheterostructures 10 December 2013 Pages: 520 - 525