Development of methods and instruments for optical ellipsometry at the Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences E. V. SpesivtsevS. V. RykhlitskiiV. A. Shvets Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 419 - 425
Growing of HgCdTe heterostructures with in situ ellipsometric control V. A. ShvetsN. N. MikhailovS. A. Dvoretskii Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 426 - 435
Emitters based on semiconductor Bragg microcavities V. A. HaislerI. A. DerebezovI. I. Ryabtsev Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 436 - 441
Effect of electron trapping centers on electrical and photoelectric properties of PbSnTe : In A. E. KlimovV. N. Shumsky Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 442 - 451
Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy E. A. Emel’yanovD. F. FeklinV. V. Preobrazhenskii Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 452 - 458
Oxidation kinetics of a silicon surface in a plasma of oxygen with inert gases A. Kh. AntonenkoV. A. VolodinD. V. Marin Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 459 - 464
Optical properties and morphology of diamond-like films obtained in a supersonic flow of a hydrocarbon plasma S. N. SvitashevaG. A. PozdnyakovYu. V. Nastaushev Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 465 - 471
Ellipsometric monitoring in label-free microarray biotechnologies V. V. VlasovA. N. SinyakovV. P. Bessmel’tsev Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 472 - 481
Estimation of the ultimate efficiency of a three-pin solar cell based on the GaAs/Si heterostructure D. O. KuznetsovE. G. TishkovskiiD. M. Legan Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 482 - 484
Dependences of the optical characteristics of Al x Ga1−x N films on the substrate composition and polarity S. N. SvitashevaK. S. Zhuravlev Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 485 - 489
Modeling the formation of silicon nanoclusters during annealing SiO x layers E. A. Mikhant’evI. G. NeizvestnyiN. L. Shvarts Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 28 January 2012 Pages: 490 - 497
Infrared scanning microscope with high spatial resolution V. M. BazovkinI. V. Mzhel’skiiV. G. Polovinkin Automatic Control Systems in Scientific Research and Industry 28 January 2012 Pages: 498 - 502
Calibration of photodetectors in IR microscopes G. L. KuryshevI. V. Mzhel’skiiV. G. Polovinkin Automatic Control Systems in Scientific Research and Industry 28 January 2012 Pages: 503 - 507
Application of uncooled microbolometer detector arrays for recording radiation of the terahertz spectral range M. A. Dem’yanenkoD. G. EsaevV. V. Gerasimov Automatic Control Systems in Scientific Research and Industry 28 January 2012 Pages: 508 - 512
Application of ellipsometry for studying bio-organic media M. I. VoevodaS. E. Pel’tekK. P. Mogil’nikov Automatic Control Systems in Scientific Research and Industry 28 January 2012 Pages: 513 - 518
Automated system for measuring electrical and recombination-diffusion parameters of charge carriers in p-type mercury-cadmium-tellurium films B. Ya. KostyuchenkoD. V. KombarovD. Yu. Protasov Automatic Control Systems in Scientific Research and Industry 28 January 2012 Pages: 519 - 525