1. Germanium-based metal-insulator-semiconductor transistors as a direction for the further development of CMOS technology

   • I. G. Neizvestny

   Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 421 - 427

2. Materials science aspects of dielectric film compositions in the planar technology of Ge-based MIS structures

   • E. B. Gorokhov
   • K. N. Astankova

   Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 428 - 433

3. Optimization of the response of nanowire biosensors

   • O. V. Naumova
   • B. I. Fomin

   Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 434 - 437

4. Current-coltage characteristics of PbSnTe:In films in a magnetic field with electron injection from the contacts

   • D. V. Ishchenko
   • V. S. Epov

   Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 438 - 441

5. Negative differential resistance in high-power InGaN/GaN laser diode

   • V. T. Shamirzaev
   • V. A. Gaisler
   • T. S. Shamirzaev

   Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 442 - 446

6. Three-spectrum multielement photodetector device

   • I. G. Neizvestny
   • V. N. Shumsky

   Optical Information Technologies 06 January 2017 Pages: 447 - 452

7. Quantum key distribution in single-photon communication system

   • D. B. Tretyakov
   • A. V. Kolyako
   • I. G. Neizvestny

   Optical Information Technologies 06 January 2017 Pages: 453 - 461

8. Radiation detectors based on PbSnTe:In films, sensitive in the terahertz range of the spectrum

   • I. G. Neizvestnyi
   • A. E. Klimov
   • V. N. Shumskii

   Optical Information Technologies 06 January 2017 Pages: 462 - 474

9. Study of photon statistics using a compound Poisson distribution and quadrature measurements

   • Yu. I. Bogdanov
   • N. A. Bogdanova
   • V. F. Lukichev

   Optical Information Technologies 06 January 2017 Pages: 475 - 485

10. Formation of silicon nanocrystals in Si—SiO₂—α-Si—SiO₂ heterostructures during high-temperature annealing: Experiment and simulation

    • I. G. Neizvestny
    • V. A. Volodin
    • N. L. Shwartz

    Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 486 - 495

11. Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing

    • A. V. Dvurechenskii
    • V. A. Volodin
    • J. Stuchlik

    Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 496 - 500

12. Adatom concentration distribution on an extrawide Si(111) terrace during sublimation

    • D. I. Rogilo
    • N. E. Rybin
    • A. V. Latyshev

    Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 501 - 507

13. Monte Carlo simulation of the formation of A^IIIB^V nanostructures with the use of droplet epitaxy

    • M. A. Vasilenko
    • A. G. Nastovjak
    • N. L. Shwartz

    Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 508 - 517

14. Introscopy in nano- and mesoscopic physics: Single electronics and quantum ballistics

    • V. A. Tkachenko
    • O. A. Tkachenko
    • A. L. Aseev

    Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 518 - 528