Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band R. D. RajavelD. M. JambaS. M. Johnson OriginalPaper Pages: 476 - 481
MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays P. MitraS. L. BarnesB. L. Musicant OriginalPaper Pages: 482 - 487
MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors Owen K. WuRajesh D. RajavelBill Johnson OriginalPaper Pages: 488 - 492
Improving material characteristics and reproducibility of MBE HgCdTe D. D. EdwallM. ZandianJ. M. Arias OriginalPaper Pages: 493 - 501
Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures M. J. BevanL. A. AlmeidaH. D. Shih OriginalPaper Pages: 502 - 506
Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy M. S. HanT. W. KangT. W. Kim OriginalPaper Pages: 507 - 510
Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates David R. RhigerSanghamitra SenMichael Dudley OriginalPaper Pages: 515 - 523
Optimization of the structural properties of Hg1−x CdxTe (x = 0.18−0.30) alloys: Growth and modeling A. ParikhS. D. PearsonC. J. Summers OriginalPaper Pages: 524 - 528
Investigation of the effects of polishing and etching on the quality of Cd1−xZnxTe using spatial mapping techniques H. YoonJ. M. Van ScyocR. B. James OriginalPaper Pages: 529 - 533
The use of atomic hydrogen for substrate cleaning for subsequent growth of II-VI semiconductors L. S. HirschZhonghai YuM. R. Richards-Babb OriginalPaper Pages: 534 - 541
Surface cleaning and etching of CdZnTe and CdTe in H2/Ar, CH4/H2/Ar, and CH4/H2/N2/Ar electron cyclotron resonance plasmas Robert C. KellerH. ZimmermannH. J. Richter OriginalPaper Pages: 542 - 551
Surface passivation of HgCdTe by CdZnTe and its characteristics T. S. LeeK. K. ChoiS. D. Lee OriginalPaper Pages: 552 - 555
New surface treatment method for improving the interface characteristics of CdTe/Hg1−xCdxTe heterostructure Seong Hoon LeeHyungcheol ShinChoong Ki Kim OriginalPaper Pages: 556 - 560
Temperature dependence of the optical properties of Hg1−xCdxTe Charles C. KimS. Sivananthan OriginalPaper Pages: 561 - 566
Application of urbach rule optical absorption to composition measurement of Cd1−yZnyTe A. J. SyllaiosP. -K. LiaoG. Westphal OriginalPaper Pages: 567 - 570
Electronic structure, absorption coefficient, and auger rate in HgCdTe and thallium-based alloys Srinivasan KrishnamurthyA. -B. ChenA. Sher OriginalPaper Pages: 571 - 577
Evaluation of low-temperature interdiffusion coefficients in Hg-based superlattices by monitoring the E1 reflectance peak M. A. MattsonT. H. MyersJ. R. Meyer OriginalPaper Pages: 578 - 583
Inter-layer subb and mixing in MBE-grown HgTe/CdTe superlattices J. W. ParkJaesun LeeJ. M. Kim OriginalPaper Pages: 584 - 587
Improved determination of matrix compostion of Hg1−xCdxTe by SIMS Jack ShengLarry WangYumin Gao OriginalPaper Pages: 588 - 592
X-ray rocking curve analysis of ion implanted mercury cadmium telluride B. L. WilliamsH. G. RobinsonN. Zhu OriginalPaper Pages: 600 - 605
Characterization of CdTe/Hg1−xCdxTe heterostructures by high-resolution x-ray diffraction N. MainzerD. ShiloA. Sher OriginalPaper Pages: 606 - 609
Surface cracking in Zinc diffused CdTe J. C. ClarkE. D. JonesA. W. Brinkman OriginalPaper Pages: 610 - 615
Numerical simulation of clustering phenomena for point-defects in HgCdTe Iwao SugiyamaNobuyuki KajiharaYoshihiro Miyamoto OriginalPaper Pages: 616 - 620
Mode of arsenic incorporation in HgCdTe grown by MBE S. SivananthanP. S. WijewarnasuriyaJ. M. Arias OriginalPaper Pages: 621 - 624
Behavior of p-type dopants in HgCdTe M. A. BerdingA. SherM. Van Schilfgaarde OriginalPaper Pages: 625 - 628
Modeling of junction formation and drive-in in ion implanted HgCdTe S. Holander-GleixnerB. L. WilliamsC. R. Helms OriginalPaper Pages: 629 - 634
Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures M. H. WeilerG. J. Tarnowski OriginalPaper Pages: 635 - 642
1/f noise studies in uncooled narrow gap Hg1−xCdxTe non-equilibrium diodes C. T. ElliottN. T. GordonA. Best OriginalPaper Pages: 643 - 648
High performance SWIR HgCdTe detector arrays L. O. BubulacW. E. TennantA. I. D’souza OriginalPaper Pages: 649 - 655
VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications A. I. D’souzaL. C. DawsonJ. E. Jandik OriginalPaper Pages: 656 - 661
Photocurrent effect on the zero-Bias dynamic resistance of HgCdTe photodiode Kwan KimHan JungChoong-Ki Kim OriginalPaper Pages: 662 - 666
Resonant-cavity infrared optoelectronic devices J. L. PautratE. HadjiN. Magnea OriginalPaper Pages: 667 - 672
Modeling of heterojunction HgCdTe photodiodes using approximate k • p approach V. ArielG. Bahir OriginalPaper Pages: 673 - 677
Device modeling of HgCdTe vertically integrated photodiodes D. H. MaoH. G. RobinsonC. R. Helms OriginalPaper Pages: 678 - 682
Thermodynamical properties of thallium-based III-V materials M. A. BerdingM. Van SchilfgaardeC. R. Abernathy OriginalPaper Pages: 683 - 687
Applications of thermodynamical modeling in molecular beam epitaxy of CdxHg1-xTe T. ColinT. Skauli OriginalPaper Pages: 688 - 696
Structural properties of ZnSy Se1−yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy X. G. ZhangS. KalisettyF. C. Jain OriginalPaper Pages: 697 - 704
Molecular beam epitaxial growth of P-ZnSe:N using a novel plasma source K. KimuraS. MiwaT. Yao OriginalPaper Pages: 705 - 709
A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE D. W. ParentS. KalisettyF. C. Jain OriginalPaper Pages: 710 - 714
Degradation of ZnSe/ZnTe multiquantum well contacts to p-ZnSe John J. FijolPaul H. Holloway OriginalPaper Pages: 715 - 722
New mechanisms in photo-assisted MOVPE of II-VI semiconductors S. J. C. IrvineA. StaffordH. Kheyrandish OriginalPaper Pages: 723 - 727
Gas source molecular beam epitaxy growth of SrS:Ce for flat panel displays W. TongT. YangC. J. Summers OriginalPaper Pages: 728 - 731
Photoluminescence of nitrogen-doped zinc selenide epilayers M. MoldovanS. D. Setzler ZhonghaiyuN. C. Giles OriginalPaper Pages: 732 - 737
New developments in CdTe and CdZnTe detectors for X and γ-ray applications L. VergerJ. P. BonnefoyP. Ouvrier-Buffet OriginalPaper Pages: 738 - 744
Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design R. SudhaesananG. D. VakerlisN. H. Karam OriginalPaper Pages: 745 - 749
Linear x-ray detector array made on bulk CdZnTe for 30∼100 keV energy S. S. YooG. JenningsP. A. Montano OriginalPaper Pages: 750 - 755
Study of contacts to CdZnTe radiation detectors Y. NemirovskyA. RuzinL. Li OriginalPaper Pages: 756 - 764