Degradation of PL characteristics in strained layer multi-quantum well structure with atomic ordering structure Nobuyuki OtsukaMasahiro KitoYasushi Matsui OriginalPaper Pages: 701 - 708
Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics B. J. H. StadlerK. VaccaroJ. P. Lorenzo OriginalPaper Pages: 709 - 713
Thermal stability of interfaces between metals and InP-based materials Y. AshizawaC. NozakiA. Sasaki OriginalPaper Pages: 715 - 719
Microstructural analysis of the Ge/Pd(Zn) ohmic contact to p-InP Moon-Ho ParkL. C. WangD. M. Hwang OriginalPaper Pages: 721 - 725
Atomic structures of Au and Ag films epitaxially grown on the InP(001)-p(2 × 4) surface K. MoritaK. SodaM. Hanebuchi OriginalPaper Pages: 727 - 731
Characterization of electron traps in plasma-treated AlInAs T. SuginoD. HirataJ. Shirafuji OriginalPaper Pages: 733 - 737
Interface strain in InGaAs-InP superlattices A. R. ClawsonC. M. Hanson OriginalPaper Pages: 739 - 744
Highly confined two-dimensional electron gas in an In0.52AI0.48As/In0.52Ga0.47As modulation-doped structure with a strained InAs quantum well Tatsushi AkazakiJunsaku NittaKunihiro Arai OriginalPaper Pages: 745 - 748
Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactor C. YuanT. SalagajR. M. Kolbas OriginalPaper Pages: 749 - 753
A unique, device-friendly contact system for shallow junction p/n indium phosphide devices Victor G. WeizerNavid S. Fatemi OriginalPaper Pages: 755 - 760
Effect of the post-As+-lmplantation thermal treatment on MBE HgCdTe optical properties S. P. GuoY. ChangS. X. Yuan OriginalPaper Pages: 761 - 764
Magnetron sputtered transparent conducting CdO thin films K. GurumuruganD. MangalarajS. A. K. Narayandass OriginalPaper Pages: 765 - 770
Low oxygen and carbon incorporation in AIGaAs using tritertiarybutylaluminum in organometallic vapor phase epitaxy C. A. WangS. SalimandA. C. Jones OriginalPaper Pages: 771 - 774