Probing the mechanisms of growth of gallium arsenide by metalorganic vapor phase epitaxy using experimental and theoretical studies of designed precursors Douglas F. FosterChristopher GlidewellDavid J. Cole-Hamilton OriginalPaper Pages: 69 - 74
Growth of high mobility InSb by metalorganic chemical vapor deposition D. L. PartinL. GreenJ. Heremans OriginalPaper Pages: 75 - 79
High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy S. D. PerrinC. P. SeltzerP. C. Spurdens OriginalPaper Pages: 81 - 85
Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers M. E. HeimbuchA. L. HolmesL. A. Coldren OriginalPaper Pages: 87 - 91
Constant indium delivery from trimethylindium/hexadecane slurry L. W. FanninR. H. PearceD. W. Webb OriginalPaper Pages: 93 - 96
Lateral growth of GaAs on patterned {-1-1-1}B substrates for the fabrication of nano wires using metalorganic molecular beam epitaxy Yasuhiko NomuraYoshitaka MorishitaYoshifumi Katayama OriginalPaper Pages: 97 - 100
Impurity induced disordering of OMVPE-grown ZnSe/ZnS strained layer superlattices by germanium diffusion T. YokogawaP. D. FloydJ. L. Merz OriginalPaper Pages: 101 - 104
Photodissociation dynamics of DMZn at 193 nm: Implications for the growth of ZnSe films by laser-assisted metalorganic chemical vapor deposition Joseph A. EliasPeter J. WisoffWilliam L. Wilson OriginalPaper Pages: 105 - 113
Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD T. M. CockerillD. V. ForbesJ. J. Coleman OriginalPaper Pages: 115 - 119
Atmospheric and low pressure metalorganic vapor phase epitaxial growth of vertical quantum wells and quantum well wires on submicron gratings G. VermeireI. MoermanP. Demeester OriginalPaper Pages: 121 - 124
Control of ordering in GaInP and effect on bandgap energy L. C. SuS. T. PuD. Bimberg OriginalPaper Pages: 125 - 133
Optical and crystallographic properties of high perfection InP grown on Si(111) A. KrostF. HeinrichsdorffH. Cerva OriginalPaper Pages: 135 - 139
High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure J. P. AndréA. DeswarteP. Ruterana OriginalPaper Pages: 141 - 146
Growth of (GaAs)1_x(Ge2)x by metalorganic chemical vapor deposition S. M. VernonM. M. SanfaconR. K. Ahrenkiel OriginalPaper Pages: 147 - 151
Metalorganic vapor phase epitaxial growth and structural characterization of GaAs/InP heterostructures G. AttoliniP. FranzosiG. Salviati OriginalPaper Pages: 153 - 158
Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits H. KanberS. X. BarM. Pacer OriginalPaper Pages: 159 - 166
Integrated in situ monitoring of a metalorganic vapor phase epitaxy reactor for II–VI epitaxy S. J. C. IrvineJ. BajajR. V. Gil OriginalPaper Pages: 167 - 173
Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices D. V. ForbesJ. J. ColemanR. S. Averback OriginalPaper Pages: 175 - 178
In situ spectral reflectance monitoring of III-V epitaxy K. P. KilleenW. G. Breiland OriginalPaper Pages: 179 - 183
Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy C. A. WangD. M. Tracy OriginalPaper Pages: 185 - 189
Interdiffusion and relaxation in metalorganic vapor phase epitaxy grown InGaAs/GaAs strained layer quantum wells A. K. SrivastavaB. M. AroraS. Banerjee OriginalPaper Pages: 191 - 194
In situ observation of surface morphology of InP grown on singular and vicinal (001) substrates K. A. BertnessC. KramerJohn Moreland OriginalPaper Pages: 195 - 200
Strain distribution in InP grown on patterned Si: Direct visualization by cathodoluminescence wavelength imaging M. GrundmannJ. ChristenD. Bimberg OriginalPaper Pages: 201 - 206
Growth of InAIGaAs strained quantum well structures for reliable 0.8 μm lasers J. A. BaumannR. J. DalbyA. Shepard OriginalPaper Pages: 207 - 216
Growth kinetics of GaSb by metalorganic vapor phase epitaxy Wei Guang-YuPeng Rui-Wu OriginalPaper Pages: 217 - 220
Reaction kinetics control in preparation of CdTe and HgCdTe by hot wall metalorganic vapor phase epitaxy Ding Yong-QingWei Guang-YuPeng Rui-Wu OriginalPaper Pages: 221 - 224
Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells G. CoudenysI. MoeemanE. Finkman OriginalPaper Pages: 225 - 232
High performance InP JFETs grown by MOCVD using tertiarybutylphosphine M. M. HashemiJ. B. ShealyU. K. Mishra OriginalPaper Pages: 233 - 237
Carbon and hydrogen incorporation in ZnTe layers grown by metalorganic chemical vapor deposition Hervé DumontLudvik SvobOuri Gorochov OriginalPaper Pages: 239 - 242