Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence V. A. WilkinsonA. D. PrinsM. T. Emeny OriginalPaper Pages: 509 - 516
Radiation damage and annealing behaviour in Be+-implanted pure Ga(Al)Sb layers M. PĂ©RotinA. SabirB. Lambert OriginalPaper Pages: 517 - 522
Orientation dependent growth behaviour during hydride VPE regrowth of InP:Fe around reactive ion etched mesas BO HammarlundSebastian LourdudossOlle Kjebon OriginalPaper Pages: 523 - 528
Low hydrogen content silicon nitride films grown by chemical vapor deposition using microwave excited hydrogen radicals Kanji YasuiShigeo Kaneda OriginalPaper Pages: 529 - 533
Dry etching characteristics of In1-x-y Ga x Al y as alloys in CCl2F2:Ar and CH4:H2:Ar discharges S. J. PeartonR. F. Kopf OriginalPaper Pages: 535 - 539
Zinc-doping of InP during chemical beam epitaxy using diethylzinc W. T. TsangF. S. ChoaN. T. Ha OriginalPaper Pages: 541 - 544
Interface trap and interface depletion in lattice-mismatched GaInAs/GaAs heterostructures Y. W. ChoiK. XieC. R. Wie OriginalPaper Pages: 545 - 551
Deep level studies in MBE GaAs grown at low temperature K. XieZ. C. HuangC. R. Wie OriginalPaper Pages: 553 - 558
Variations of temperature coefficient and noise in thin Al and Al/Si resistors subjected to high current density A. DiligentiB. NeriS. Ciucci OriginalPaper Pages: 559 - 565
Group III alkyl source purity effect on the quality of GaAs grown with tertiarybutylarsine V. S. SundaramL. M. FraasC. C. Samuel OriginalPaper Pages: 567 - 569
Correlation between copper diffusion and phase change in parylene G. R. YangS. DabralH. Bakhru OriginalPaper Pages: 571 - 576
Effect of elemental plasma on metal/Si films by partially ionized beam deposition G. R. YangT. C. NasonW. M. Lau OriginalPaper Pages: 577 - 581