1. Origin of photoluminescence from Er³⁺ centers in erbium doped GaAs and Al_0.4Ga_0.6 As grown by MBE

   • Tong Zhang
   • Y. Hwang
   • P. J. Caldwell

   OriginalPaper Pages: 1137 - 1140

2. Surface charge spectroscopy—A novel surface science technique for measuring surface state distributions on semiconductors

   • R. W. M. Kwok
   • W. M. Lau
   • S. Ingrey

   OriginalPaper Pages: 1141 - 1146

3. Characterization of silicon oxide films grown at room temperature by point-to-plane corona discharge

   • M. R. Madani
   • P. K. Ajmera

   OriginalPaper Pages: 1147 - 1152

4. Fe and Ti implants in In_0.52Al_0.48As

   • Jaime M. Martin
   • Ravi K. Nadella
   • C. Caneau

   OriginalPaper Pages: 1153 - 1157

5. Influence of the interface-state density on the electron mobility in silicon inversion layers

   • J. Banqueri
   • F. Gámiz
   • J. A. López-Villanueva

   OriginalPaper Pages: 1159 - 1163

6. Controlled p-type Sb doping in LPE-grown Hg_1−x Cd_x Te epilayers

   • Theodore C. Harman

   OriginalPaper Pages: 1165 - 1172

7. Influence of device structure and growth conditions on the tunneling characteristics of Si/Si_1−xGe_x double barrier structures

   • Ulf Gennser
   • V. P. Kesan
   • E. S. Yang

   OriginalPaper Pages: 1173 - 1177