1. Foreword

   • James R. Waterman
   • Ralph P. Ruth

   EditorialNotes Pages: 801 - 802

2. Growth kinetics and properties of heteroepitaxial (Cd,Zn)Te films prepared by metalorganic molecular beam epitaxy

   • D. Rajavel
   • J. J. Zinck

   Special Issue Paper Pages: 803 - 808

3. Growth of HgSe and Hg_1−xCd_xSe thin films by molecular beam epitaxy

   • Y. Lansari
   • J. W. Cook
   • J. F. Schetzina

   Special Issue Paper Pages: 809 - 813

4. CdTe and HgTe surface growth kinetics for molecular and metalorganic molecular beam epitaxy

   • R. G. Benz
   • B. K. Wagner
   • C. J. Summers

   Special Issue Paper Pages: 815 - 820

5. Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

   • J. H. Tregilgas
   • C. F. Wan
   • H. Y. Liu

   Special Issue Paper Pages: 821 - 826

6. Substrate issues for the growth of mercury cadmium telluride

   • R. Triboulet
   • A. Tromson-Carli
   • T. Nguyen Duy

   Special Issue Paper Pages: 827 - 834

7. MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs

   • S. M. Johnson
   • J. A. Vigil
   • J. M. Myrosznyk

   Special Issue Paper Pages: 835 - 842

8. Comparison of In_1−xTl_x Sb and Hg_1−x Cd_x Te as long wavelength infrared materials

   • A. B. Chen
   • M. Van Schilfgaarde
   • A. Sher

   Special Issue Paper Pages: 843 - 846

9. Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg_1−x Cd_xTe grown by the direct alloy and interdiffused growth processes

   • D. D. Edwall

   Special Issue Paper Pages: 847 - 851

10. Indium doping of HgCdTe grown by metalorganic chemical vapor deposition-direct alloy growth using triisopropylindium and diisopropyltellurium triisopropylindium adduct

    • R. Korenstein
    • P. H. Hallock
    • K. T. Higa

    Special Issue Paper Pages: 853 - 857

11. A new N-type doping precursor for MOCVD-IMP growth of detector quality MCT

    • S. J. C. Irvine
    • J. Bajaj
    • K. T. Higa

    Special Issue Paper Pages: 859 - 864

12. Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor deposition

    • K. Shigenaka
    • L. Sugiura
    • K. Hirahara

    Special Issue Paper Pages: 865 - 871

13. Improved CdTe layers on GaAs and Si using atomic layer epitaxy

    • Wen-Sheng Wang
    • Hassan Ehsani
    • Ishwara Bhat

    Special Issue Paper Pages: 873 - 878

14. The effect of substrate tilt on MOCVD growth of {100}CdTe on {100}GaAs

    • W. J. Hamilton
    • J. A. Vigil
    • S. M. Johnson

    Special Issue Paper Pages: 879 - 885

15. Use of ellipsometry to characterize the surface of HgCdTe

    • David R. Rhiger

    Special Issue Paper Pages: 887 - 898

16. Modeling of in situ monitored laser reflectance during MOCVD growth of HgCdTe

    • J. Bajaj
    • S. J. C. Irvine
    • Spyros A. Svoronos

    Special Issue Paper Pages: 899 - 906

17. Hall effect characterization of LPE HgCdTe P/n heterojunctions

    • S. P. Tobin
    • G. N. Pultz
    • P. W. Norton

    Special Issue Paper Pages: 907 - 914

18. Assessment of electrical inhomogeneity of undoped and doped Hg_1−xCd_xTe MOVPE (IMP) layers by variable magnetic field hall profile measurements

    • M. L. Young
    • J. Giess
    • J. S. Gough

    Special Issue Paper Pages: 915 - 921

19. Characterization of Hg_1−xCd_xTe heterostructures by thermoelectric measurements

    • J. Baars
    • D. Brink
    • L. O. Bubulac

    Special Issue Paper Pages: 923 - 929

20. Photo-induced excess low frequency noise in HgCdTe photodiodes

    • G. M. Williams
    • R. E. De Wames
    • E. R. Blazejewski

    Special Issue Paper Pages: 931 - 941

21. Synchrotron white beam x-ray topography analysis of MBE grown CdTe/CdTe (111)B

    • T. Fanning
    • M. B. Lee
    • M. Dudley

    Special Issue Paper Pages: 943 - 949

22. Structure of CdTe(111)B grown by MBE on misoriented Si(001)

    • Y. P. Chen
    • S. Sivananthan
    • J. P. Faurie

    Special Issue Paper Pages: 951 - 957

23. X-ray diffraction characterization of LPE HgCdTe heterojunction photodiode material

    • S. P. Tobin
    • E. E. Krueger
    • P. W. Norton

    Special Issue Paper Pages: 959 - 966

24. Growth method, composition, and defect structure dependence of mercury diffusion in Cd_xHg_1–xTe

    • N. A. Archer
    • H. D. Palfrey
    • A. F. W. Willoughby

    Special Issue Paper Pages: 967 - 971

25. Integrated heterostructure devices based on II–VI compound semiconductors

    • J. Ren
    • Y. Lansari
    • J. F. Schetzina

    Special Issue Paper Pages: 973 - 975

26. UV photon assisted control of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayers

    • Y. Nemirovsky
    • A. Ruzin
    • A. Bezinger

    Special Issue Paper Pages: 977 - 983

27. Heavily accumulated surfaces of mercury cadmium telluride detectors: Theory and experiment

    • J. R. Lowney
    • D. G. Seiler
    • C. L. Littler

    Special Issue Paper Pages: 985 - 991

28. The role of the insulator in determining 1/f noise in Hg_1-xCd_xTe integrating MIS devices

    • José L. Meléndez
    • Jeff Beck

    Special Issue Paper Pages: 993 - 998

29. Process modeling of point defect effects in Hg_1-xCd_xTe

    • José L. Meléndez
    • C. R. Helms

    Special Issue Paper Pages: 999 - 1004

30. Hg_0.8Cd_0.2Te native defects: Densities and dopant properties

    • M. A. Berding
    • M. Van Schilfgaarde
    • A. Sher

    Special Issue Paper Pages: 1005 - 1010

31. Observation of indium-vacancy and indium-hydrogen interactions in Hg_1−xCd_xTe

    • WM. C. Hughes
    • M. L. Swanson
    • J. C. Austin

    Special Issue Paper Pages: 1011 - 1016

32. Electrical effects of dislocations and other crystallographic defects in Hg_0.78Cd_0.22Te n-on-p photodiodes

    • R. S. List

    Special Issue Paper Pages: 1017 - 1025

33. Large improvement in HgCdTe photovoltaic detector performances at LETI

    • G. Destefanis
    • J. P. Chamonal

    Special Issue Paper Pages: 1027 - 1032

34. Influence of Hg pressure on diffusion coefficient of As in HgCdTe

    • D. Chandra
    • M. W. Goodwin
    • J. A. Dodge

    Special Issue Paper Pages: 1033 - 1037

35. Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe

    • S. H. Shin
    • J. M. Arias
    • R. E. De Wames

    Special Issue Paper Pages: 1039 - 1047

36. MBE HgCdTe heterostructure p-on-n planar infrared photodiodes

    • J. M. Arias
    • J. G. Pasko
    • W. E. Tennant

    Special Issue Paper Pages: 1049 - 1053

37. Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etching

    • C. R. Eddy
    • C. A. Hoffman
    • E. A. Dobisz

    Special Issue Paper Pages: 1055 - 1060

38. Low threshold injection laser in HgCdTe

    • Ph. Bouchut
    • G. Destefanis
    • J. Bablet

    Special Issue Paper Pages: 1061 - 1065

39. Vapor phase equilibria in the Cd_1−xZn_xTe alloy system

    • H. R. Vydyanath
    • J. A. Ellsworth
    • G. T. Neugebauer

    Special Issue Paper Pages: 1067 - 1071

40. Thermomigration of Te precipitates and improvement of (Cd,Zn)Te substrate characteristics for the fabrication of LWIR (Hg, Cd)Te photodiodes

    • H. R. Vydyanath
    • J. A. Ellsworth
    • Pok-Kai Liao

    Special Issue Paper Pages: 1073 - 1080

41. Evidence for 1/f noise in diffusion current due to insulator trapping and surface recombination velocity fluctuations

    • R. A. Schiebel
    • D. Blanks
    • M. A. Kinch

    Special Issue Paper Pages: 1081 - 1085

42. Properties of InAs/(Ga, In)Sb strained layer superlattices grown on the {111} orientations

    • J. A. Dura
    • J. T. Zborowski
    • W. Covington

    Special Issue Paper Pages: 1087 - 1091

43. Auger lifetimes in ideal InGaSb/InAs superlattices

    • C. H. Grein
    • P. M. Young
    • T. C. McGill

    Special Issue Paper Pages: 1093 - 1096

44. In-situ ellipsometric measurements of the MBE growth of CdTe/HgTe and CdTe/ZnTe superlattices

    • M. A. Folkard
    • G. Shen
    • M. Gal

    Special Issue Paper Pages: 1097 - 1102

45. States confined in the barriers of type-III HgTe/CdTe superlattices

    • H. Luo
    • L. R. Ram-Mohan
    • J. K. Furdyna

    Special Issue Paper Pages: 1103 - 1106

46. Band gap uniformity and layer stability of HgTe-CdTe superlattices grown by photon-assisted molecular beam epitaxy

    • R. W. Vanka
    • K. A. Harris
    • N. Otsuka

    Special Issue Paper Pages: 1107 - 1112

47. Comparison of the surface morphology and microstructure of in situ and ex situ derived YBa₂Cu₃O_7−x thin films

    • A. C. Westerheim
    • P. C. Mcintyre
    • M. J. Cima

    Regular Issue Paper Pages: 1113 - 1120

48. Fast vapor growth of cadmium telluride single crystals

    • Heribert Wiedemeier
    • Guangheng Wu

    Regular Issue Paper Pages: 1121 - 1127

49. A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal Si

    • Akif Sultan
    • Melvyn Lobo
    • C. Dennison

    Regular Issue Paper Pages: 1129 - 1135