1. Electronic Materials Conference Proceedings

   Foreword Pages: 560 - 560

2. The role of metallurgy in the technology of electronic materials

   • J. H. Scaff

   OriginalPaper Pages: 561 - 573

3. A review of bulk and process-induced defects in GaAs semiconductors

   • E. D. Jungbluth

   ReviewPaper Pages: 575 - 586

4. Efficiency degradation of GaAs_1−xP_x electroluminescent diodes due to high-energy electron irradiation

   • C. J. Nuese
   • H. Schade
   • D. Herrick

   OriginalPaper Pages: 587 - 591

5. Bulk growth of GaP by halogen vapor transport

   • Lars C. Luther

   OriginalPaper Pages: 593 - 601

6. Anneal behavior of defects in lon-lmplanted GaAs diodes

   • Robert G. Hunsperger
   • Ogden J. Marsh

   OriginalPaper Pages: 603 - 607

7. Autodoping effects at the interface of GaAs-Ge heterojunctions

   • G. O. Ladd
   • D. L. Feucht

   OriginalPaper Pages: 609 - 616

8. Electrically active point defects in cadmium telluride

   • F. T. J. Smith

   OriginalPaper Pages: 617 - 621

9. Heteroepitaxial GaAs on aluminum oxide. I: Early growth studies

   • H. M. Manasevit
   • A. C. Thorsen

   OriginalPaper Pages: 623 - 628

10. Rapid, nondestructive evaluation of macroscopic defects in crystalline materials: The laue topography of (Hg, Cd) Te

    • Laurence N. Swink
    • Maurice J. Brau

    OriginalPaper Pages: 629 - 634

11. Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation

    • H. Kressel
    • N. E. Byer
    • S. H. McFarlane

    OriginalPaper Pages: 635 - 638

12. Defects studies of semiconductor materials

    • E. D. Pierron
    • J. W. Burd
    • J. B. McNeely

    OriginalPaper Pages: 639 - 642

13. The anomalous behavior of Schottky barrier diodes made on lightly doped GaAs

    • Michael F. Amsterdam

    OriginalPaper Pages: 643 - 646

14. Fast growing protrusions from epitaxial semiconductor surfaces

    • J. M. Green

    OriginalPaper Pages: 647 - 650

15. Dislocation mobility in heavily doped silicon single crystals

    • A. D. Paddock
    • S. H. Carpenter

    OriginalPaper Pages: 651 - 658

16. Defect study and identification in Ge(Li) P-N junction radiation detectors

    • Guy A. Armantrout

    OriginalPaper Pages: 659 - 665

17. Metallographic aspects of thick film technology

    • Denis G. Kelemen

    OriginalPaper Pages: 667 - 677

18. Metallurgical study of flip-chip bonding

    • H. Ohara
    • K. Sato
    • G. Kamoshita

    OriginalPaper Pages: 679 - 683

19. Refractory metallization of green ceramic

    • Dudley A. Chance

    OriginalPaper Pages: 685 - 694

20. Influence of metallic diffusion on the adhesion of screen printed silver films

    • A. A. Milgram

    OriginalPaper Pages: 695 - 700

21. Electrical reliability of parylene films for device passivation

    • S. M. Lee
    • J. J. Licari
    • I. Litant

    OriginalPaper Pages: 701 - 711

22. Aluminum metallization and contacts for integrated circuits

    • Clyde H. Lane

    OriginalPaper Pages: 713 - 724

23. Aluminum films deposited by rf sputtering

    • F. M. D’Heurle

    OriginalPaper Pages: 725 - 732

24. Epitaxial effects in vapor-deposited metal films

    • Lester Goldstein
    • Benjamin Post

    OriginalPaper Pages: 733 - 734

25. Structural properties of vapor deposited silicon nitride

    • Willem A. Kohler

    OriginalPaper Pages: 735 - 740

26. Pinholes in pyrolytic oxide deposited on silicon and metals

    • V. Y. Doo
    • Viola M. L. Sun

    OriginalPaper Pages: 741 - 745

27. Infrared absorption characteristics of soluble and insoluble phosphorous-bearing oxide layers

    • E. A. Corl
    • W. E. Reese

    OriginalPaper Pages: 747 - 748