The role of metallurgy in the technology of electronic materials J. H. Scaff OriginalPaper Pages: 561 - 573
A review of bulk and process-induced defects in GaAs semiconductors E. D. Jungbluth ReviewPaper Pages: 575 - 586
Efficiency degradation of GaAs1−xPx electroluminescent diodes due to high-energy electron irradiation C. J. NueseH. SchadeD. Herrick OriginalPaper Pages: 587 - 591
Anneal behavior of defects in lon-lmplanted GaAs diodes Robert G. HunspergerOgden J. Marsh OriginalPaper Pages: 603 - 607
Autodoping effects at the interface of GaAs-Ge heterojunctions G. O. LaddD. L. Feucht OriginalPaper Pages: 609 - 616
Heteroepitaxial GaAs on aluminum oxide. I: Early growth studies H. M. ManasevitA. C. Thorsen OriginalPaper Pages: 623 - 628
Rapid, nondestructive evaluation of macroscopic defects in crystalline materials: The laue topography of (Hg, Cd) Te Laurence N. SwinkMaurice J. Brau OriginalPaper Pages: 629 - 634
Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation H. KresselN. E. ByerS. H. McFarlane OriginalPaper Pages: 635 - 638
Defects studies of semiconductor materials E. D. PierronJ. W. BurdJ. B. McNeely OriginalPaper Pages: 639 - 642
The anomalous behavior of Schottky barrier diodes made on lightly doped GaAs Michael F. Amsterdam OriginalPaper Pages: 643 - 646
Fast growing protrusions from epitaxial semiconductor surfaces J. M. Green OriginalPaper Pages: 647 - 650
Dislocation mobility in heavily doped silicon single crystals A. D. PaddockS. H. Carpenter OriginalPaper Pages: 651 - 658
Defect study and identification in Ge(Li) P-N junction radiation detectors Guy A. Armantrout OriginalPaper Pages: 659 - 665
Influence of metallic diffusion on the adhesion of screen printed silver films A. A. Milgram OriginalPaper Pages: 695 - 700
Electrical reliability of parylene films for device passivation S. M. LeeJ. J. LicariI. Litant OriginalPaper Pages: 701 - 711
Aluminum metallization and contacts for integrated circuits Clyde H. Lane OriginalPaper Pages: 713 - 724
Epitaxial effects in vapor-deposited metal films Lester GoldsteinBenjamin Post OriginalPaper Pages: 733 - 734
Structural properties of vapor deposited silicon nitride Willem A. Kohler OriginalPaper Pages: 735 - 740
Pinholes in pyrolytic oxide deposited on silicon and metals V. Y. DooViola M. L. Sun OriginalPaper Pages: 741 - 745
Infrared absorption characteristics of soluble and insoluble phosphorous-bearing oxide layers E. A. CorlW. E. Reese OriginalPaper Pages: 747 - 748
