1. About the choice of auxiliary sources during the solution of the problem of diffraction of a point source field by a dielectric body

   • S. A. Manenkov

   Electrodynamics and Wave Propagation 05 April 2016 Pages: 211 - 223

2. Diffraction of a plane wave by a multiserial lattice located in a dielectric layer

   • A. G. Kurkchan
   • S. A. Manenkov
   • E. S. Negorozhina

   Electrodynamics and Wave Propagation 05 April 2016 Pages: 224 - 233

3. A vector model of wave propagation through an interface of dissipative media

   • V. G. Shavrov
   • V. I. Shcheglov

   Electrodynamics and Wave Propagation 05 April 2016 Pages: 234 - 242

4. Boundary-value problem for the adjoint Helmholtz equation

   • A. S. Raevskii
   • S. B. Raevskii

   Electrodynamics and Wave Propagation 05 April 2016 Pages: 243 - 245

5. Amplitude-goniometric passive location of an emitting target in the nonstationary radio channel

   • Yu. G. Bulychev
   • V. Yu. Bulychev
   • S. S. Ivakina

   Statistical Radiophysics 05 April 2016 Pages: 246 - 253

6. Influence of the medium nonlinearity on the reflection of monochromatic and pulsed radiation

   • I. V. Zlodeev
   • D. I. Sementsov

   Radio Phenomena in Solids and Plasma 05 April 2016 Pages: 254 - 260

7. Tunneling of optical beams in a layered structure with a periodic variation in the refractive index

   • N. A. Bobkov
   • V. F. Marchenko
   • P. Yu. Shestakov

   Radio Phenomena in Solids and Plasma 05 April 2016 Pages: 261 - 266

8. Generation in crossed fields under parametric variation in the magnetic field

   • V. B. Baiburin
   • A. S. Rozov

   Microwave Electronics 05 April 2016 Pages: 267 - 271

9. Geometrized theory of plane electron beams and model of an electron-optical system of planar gyrotron

   • V. A. Syrovoi

   Electron and Ion Optics 05 April 2016 Pages: 272 - 290

10. Wideband planar filters with an extended stopband

    • A. V. Zakharov
    • M. E. Il’chenko

    Novel Radio Systems and Elements 05 April 2016 Pages: 291 - 301

11. Device for nanoobject manipulation based on two-layer composite with shape memory

    • V. A. Dikan
    • A. V. Mashirov
    • V. G. Shavrov

    Novel Radio Systems and Elements 05 April 2016 Pages: 302 - 310

12. Analytical model used to calculate focal-plane-array parameters

    • A. I. Patrashin
    • I. D. Burlakov
    • V. V. Shabarov

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 311 - 318

13. Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

    • N. I. Iakovleva
    • K. O. Boltar
    • N. A. Irodov

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 319 - 323

14. Focal plane arrays mesastructures formation by ion-beam etching

    • M. V. Sednev
    • K. O. Boltar
    • A. A. Lopukhin

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 324 - 327

15. Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes

    • S. S. Demidov
    • E. A. Klimanov

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 328 - 332

16. Investigation of the surface roughness of CdZnTe substrates by different techniques of nanometer accuracy

    • I. D. Burlakov
    • I. A. Denisov
    • N. A. Smirnova

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 333 - 337

17. Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors

    • V. A. Kholodnov
    • I. D. Burlakov
    • A. A. Drugova

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 338 - 343

18. Temperature dependence of diffusion length in MCT epitaxial layers

    • I. A. Nikiforov
    • A. V. Nikonov
    • N. I. Iakovleva

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 344 - 347

19. 320 × 256 avalanche array photodetector on the basis of ternary alloys of the A₃B₅ group with an InGaAs absorbing layer and an InAlAs barrier layer

    • N. I. Iakovleva
    • K. O. Boltar
    • E. D. Korotaev

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 348 - 351

20. Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes

    • A. Yu. Selyakov
    • I. D. Burlakov
    • A. M. Filachev

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 352 - 357

21. Characteristics of heteroepitaxial structures Al _x Ga_1–x N for p–i–n diode focal plane arrays

    • D. V. Smirnov
    • K. O. Boltar
    • Yu. P. Sharonov

    Articles from the Russian Journal Prikladnaya Fizika 05 April 2016 Pages: 358 - 362