Production of Semiconducting III–V Single Crystals: Current Status and Outlook A. V. Markov OriginalPaper Pages: 537 - 542
Neutron-Transmutation Doping and Radiation Modification of Semiconductors: Current Status and Outlook N. G. Kolin OriginalPaper Pages: 543 - 551
Physics and Technology of III–V Heterostructures: Current Status and Trends in the Development A. L. AseevO. P. PchelyakovA. I. Toropov OriginalPaper Pages: 552 - 558
Development of GaAs Epitaxy from Bulk to Ultrathin Films. Growth for Nanostructure Devices Jun-Ichi NishizawaToru Kurabayashi OriginalPaper Pages: 559 - 567
Three-Dimensional Self-Shaping Nanostructures Based on Free Stressed Heterofilms V. Ya. Prinz OriginalPaper Pages: 568 - 576
Study of the Elementary Growth Processes During Vapor-Phase Epitaxy of Semiconducting III–V Compounds I. V. IvoninI. A. Bobrovnikova OriginalPaper Pages: 577 - 584
Method of Envelope Functions for Heterostructures. Matching Models and Their Application to AlAs/AlxGa1–x As(110) G. F. KaravaevV. N. Chernyshov OriginalPaper Pages: 585 - 593
The Fermi Level Pinning in Semiconductors (Interphase Boundaries, Clusters, and Radiation Modification) V. N. BrudnyiS. N. GrinyaevN. G. Kolin OriginalPaper Pages: 594 - 600
Fabrication, Investigation, and Application of Doped Indium Antimonide Microcrystals in Radiation-Resistant Sensors F. TerraG. FakhimT. Moskovets OriginalPaper Pages: 601 - 608
Recent Advance in Terahertz Wave and Material Basis Jun-Ichi NishizawaKen SutoToru Kurabayashi OriginalPaper Pages: 615 - 622
High, Low, and Fast-Varying Pressure Gauges N. P. KrivorotovYu. G. Svinolupov OriginalPaper Pages: 623 - 630
New Approaches to the Creation of Strong Fields by Means of Permanent Magnets and to the Development of Sensor Devices for Their Mapping M. KumadaI. BolshakovaR. Holyaka OriginalPaper Pages: 631 - 635
