Laser schlieren measurement of vibrational relaxation times for N2O in mixtures containing CO, N2, and Ar behind a shock wave A. P. ZuevS. S. NegodyaevB. K. Tkachenko Optics and Spectroscopy Pages: 911 - 914
Vavilov-Cherenkov emission spectrum in an excited isotropic dispersing medium B. A. Veklenko Optics and Spectroscopy Pages: 915 - 917
Transition radiation in the presence of excited media B. A. Veklenko Optics and Spectroscopy Pages: 918 - 920
Comparison of ionization potentials of unexcited atoms and ions calculated by different methods G. P. FedinaA. V. Fedin Optics and Spectroscopy Pages: 921 - 924
Accurate relations for the isotopically invariant spectroscopic parameters of diatomic molecules T. I. VelichkoVl. G. Tyuterev Optics and Spectroscopy Pages: 925 - 928
Interaction of generators with hard excitation and the turbulence problem P. S. LandaS. M. Perminov Optics and Spectroscopy Pages: 928 - 931
Field drift of local centers as the cause of instability in the dark conductivity in CdS films grown in an atmosphere containing oxygen S. A. KorepanovP. A. ViktorV. V. Serdyuk Physics of Semiconductors and Dielectrics Pages: 932 - 934
Modeling the electrical transfer in a mixture of disperse dielectric and finely disperse solid- or liquid-phase conductor T. G. MikhailovaL. A. Bel'kovaE. A. Zamotrinskaya Physics of Semiconductors and Dielectrics Pages: 935 - 940
Deflection of IR-radiation in n-InSb in the presence of temperature-electrical instability in a magnetic field V. V. AntonovV. V. GusakovL. I. Kats Physics of Semiconductors and Dielectrics Pages: 940 - 945
Screening of the electric field in covalent crystals containing point defects N. A. Poklonskii Physics of Semiconductors and Dielectrics Pages: 945 - 947
Controlling the growth of variable zone heterostructures of GaAs-AlxGa1−xAs in a temperature-gradient field V. N. GaponenkoL. S. LuninO. D. Lunina Physics of Semiconductors and Dielectrics Pages: 948 - 950
Comparison of the results of theoretical analysis and experimental investigation of dynamic volt-ampere characteristics M. É. BorisovaO. V. GalyukovV. P. Rymsha Physics of Semiconductors and Dielectrics Pages: 951 - 957
Generalization of the Hutson and White theory to the case of piezosemiconductors with mixed conductivity B. V. Shchepetil'nikovA. G. SmaginG. A. Ermakov Physics of Semiconductors and Dielectrics Pages: 958 - 961
High-frequency conductivity of a dielectric diode with cylindrical electrodes in the case of double injection in the drift-velocity saturation regime B. L. TimanV. M. FesenkoG. M. Gulevich Physics of Semiconductors and Dielectrics Pages: 961 - 964
Low-frequency noises of planar Schottky diodes at high current densities N. N. ArmenchaI. A. Vasil'evA. V. Khalak Physics of Semiconductors and Dielectrics Pages: 964 - 967
Characteristic diffusion constants of cadmium in silicon A. A. ArifovD. Rakhimbaev Physics of Semiconductors and Dielectrics Pages: 967 - 970
Effect of growth conditions on the structure of GaAs layers in the OM-hydride process T. A. ZevekeT. S. BabushkinaT. M. Zotova Physics of Semiconductors and Dielectrics Pages: 971 - 973
Growing silicon epitaxial layers from a Si-Ga melt by the moving solvent method V. N. LozovskiiV. P. KryzhanovskiiA. I. Kolesnichenko Physics of Semiconductors and Dielectrics Pages: 974 - 976
Binary correlation function of a random field in a spatially inhomogeneous semiconductor V. D. Iskra Physics of Semiconductors and Dielectrics Pages: 977 - 980
Interband optical absorption in a heteropolar semiconductor with microcrystalline structure V. D. Iskra Physics of Semiconductors and Dielectrics Pages: 981 - 984
Formation of p-n junctions in tellurium-doped AlxGa1−xSb(As) (x = 0.15–0.20) solid solution layers A. P. VyatkinV. P. GermogenovL. S. Khludkova Physics of Semiconductors and Dielectrics Pages: 985 - 988
Stochastic self-excited oscillations in semiconductors with shallow donors under avalanche breakdown conditions I. N. Voronin Physics of Semiconductors and Dielectrics Pages: 988 - 991
Exciton mechanism of the formation of an N-section on the volt-ampere characteristic of GaSe 〈Cu〉 B. G. TagievG. M. MamedovM. B. Dzhafarov Physics of Semiconductors and Dielectrics Pages: 991 - 994
Use of variational inequalities in electrostatics V. P. Kazantsev Physics of Semiconductors and Dielectrics Pages: 995 - 999
Charge-ordered state of a half-filled conduction layer in a magnetic field N. R. Moskal'V. D. DidukhD. N. Moskal' Physics of Magnetic Effects Pages: 1000 - 1003
