1. Electrical properties of metal-vanadium-phosphate-glass contacts in various gaseous media

   • V. O. Makarov
   • I. D. Seikovskii
   • I. M. Chernenko

   Physics of Semiconductors and Dielectrics Pages: 503 - 506

2. Bistable conduction state of MOS structures based on ZnSe:Al single crystals

   • I. Birchak
   • V. V. Serdyuk
   • G. G. Chemeresyuk

   Physics of Semiconductors and Dielectrics Pages: 506 - 510

3. Equations of motion for slow variables in a dielectric crystal

   • G. L. Bukhbinder

   Physics of Semiconductors and Dielectrics Pages: 510 - 512

4. Generalized hydrodynamics of a dielectric crystal

   • G. L. Bukhbinder

   Physics of Semiconductors and Dielectrics Pages: 513 - 516

5. Band structure and density of valent states in AgAlSe₂ and AgAlTe₂

   • A. M. Protasenya
   • M. L. Zolotarev
   • A. S. Poplavnoi

   Physics of Semiconductors and Dielectrics Pages: 517 - 520

6. Methods for determination of conductivity and dielectric relaxation parameters of heterogeneous semiconductor materials using isolation layers

   • V. V. Sagoskin
   • E. A. Zamotrinskaya
   • V. I. Solov'ev

   Physics of Semiconductors and Dielectrics Pages: 520 - 524

7. Negative differential resistance and switching properties of metal-dielectric-semiconductor (metal) structures

   • L. R. Bitner
   • V. L. Galanskii

   Physics of Semiconductors and Dielectrics Pages: 524 - 527

8. Properties of Bi₂O₃-V₂O₅-CaO glasses

   • V. M. Kalygina
   • V. I. Kosintsev
   • O. E. Modebadze

   Physics of Semiconductors and Dielectrics Pages: 527 - 530

9. Switching of pure uniaxial ferroelectrics upon imposition of two electrical field or mechanical stress components

   • V. V. Gene
   • V. I. Shul'ga

   Physics of Semiconductors and Dielectrics Pages: 530 - 533

10. Effective characteristics of media containing foreign inclusions

    • S. F. Borodulin
    • A. N. Mezentsev

    Physics of Semiconductors and Dielectrics Pages: 533 - 536

11. Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl₃-H₂ system at various supersaturations

    • L. G. Lavrent'eva
    • M. D. Vilisova
    • V. A. Moskovkin

    Physics of Semiconductors and Dielectrics Pages: 536 - 540

12. Growth of GaAs epitaxial layers in the proximity of singular faces at various chlorine and impurity (tellurium) pressures

    • S. E. Toropov
    • L. P. Porokhovnichenko
    • L. G. Lavrent'eva

    Physics of Semiconductors and Dielectrics Pages: 540 - 543

13. Dispersion of an acoustic polaron in a magnetic field

    • V. N. Gladilin
    • A. A. Klyukanov

    Physics of Semiconductors and Dielectrics Pages: 543 - 547

14. Calculation of the linear parameters of a surface-helical instability in semiconductor plates

    • G. F. Karavaev
    • N. L. Chuprikov
    • B. A. Uspenskii

    Physics of Semiconductors and Dielectrics Pages: 547 - 551

15. Amplitude of oscillations and the nonlinear frequency shift upon excitation of a surface-helical instability in semiconductor plates

    • G. F. Karabaev
    • N. L. Chuprikov
    • B. A. Espenskii

    Physics of Semiconductors and Dielectrics Pages: 551 - 554

16. Positron annihilation in GaAs crystals irradiated by high-current protons

    • K. P. Aref'ev
    • V. S. Lopatin
    • A. D. Pogrebnyak

    Physics of Semiconductors and Dielectrics Pages: 555 - 558

17. Influence of annealing on the photosensitivity of low-resistance CdS single crystals

    • V. T. Mak
    • V. S. Manzhara

    Physics of Semiconductors and Dielectrics Pages: 558 - 561

18. Effect of shortwave illumination on the properties of a metal-anode oxide film-indium antimonide structure

    • V. N. Davydov
    • E. A. Loskutova

    Physics of Semiconductors and Dielectrics Pages: 561 - 565

19. Dependence of the effective mass of a diamagnetic exciton on the magnetic field intensity and temperature of a semiconducting crystal

    • N. V. Tkach
    • A. A. Zhinchenko
    • V. M. Nitsovich

    Physics of Semiconductors and Dielectrics Pages: 565 - 568

20. Measurement of the surface recombination rate and lifetime of charge carriers in semiconductors by a contactless microwave resonator method

    • V. B. Akhmanaev
    • Yu. V. Lisyuk
    • A. S. Petrov

    Physics of Semiconductors and Dielectrics Pages: 569 - 574

21. Formation of equilibrium twins in systems undergoing β-ω transformations

    • A. I. Potekaev
    • V. E. Egorushkin

    Solid State Physics Pages: 575 - 578