Electrical properties of metal-vanadium-phosphate-glass contacts in various gaseous media V. O. MakarovI. D. SeikovskiiI. M. Chernenko Physics of Semiconductors and Dielectrics Pages: 503 - 506
Bistable conduction state of MOS structures based on ZnSe:Al single crystals I. BirchakV. V. SerdyukG. G. Chemeresyuk Physics of Semiconductors and Dielectrics Pages: 506 - 510
Equations of motion for slow variables in a dielectric crystal G. L. Bukhbinder Physics of Semiconductors and Dielectrics Pages: 510 - 512
Generalized hydrodynamics of a dielectric crystal G. L. Bukhbinder Physics of Semiconductors and Dielectrics Pages: 513 - 516
Band structure and density of valent states in AgAlSe2 and AgAlTe2 A. M. ProtasenyaM. L. ZolotarevA. S. Poplavnoi Physics of Semiconductors and Dielectrics Pages: 517 - 520
Methods for determination of conductivity and dielectric relaxation parameters of heterogeneous semiconductor materials using isolation layers V. V. SagoskinE. A. ZamotrinskayaV. I. Solov'ev Physics of Semiconductors and Dielectrics Pages: 520 - 524
Negative differential resistance and switching properties of metal-dielectric-semiconductor (metal) structures L. R. BitnerV. L. Galanskii Physics of Semiconductors and Dielectrics Pages: 524 - 527
Properties of Bi2O3-V2O5-CaO glasses V. M. KalyginaV. I. KosintsevO. E. Modebadze Physics of Semiconductors and Dielectrics Pages: 527 - 530
Switching of pure uniaxial ferroelectrics upon imposition of two electrical field or mechanical stress components V. V. GeneV. I. Shul'ga Physics of Semiconductors and Dielectrics Pages: 530 - 533
Effective characteristics of media containing foreign inclusions S. F. BorodulinA. N. Mezentsev Physics of Semiconductors and Dielectrics Pages: 533 - 536
Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl3-H2 system at various supersaturations L. G. Lavrent'evaM. D. VilisovaV. A. Moskovkin Physics of Semiconductors and Dielectrics Pages: 536 - 540
Growth of GaAs epitaxial layers in the proximity of singular faces at various chlorine and impurity (tellurium) pressures S. E. ToropovL. P. PorokhovnichenkoL. G. Lavrent'eva Physics of Semiconductors and Dielectrics Pages: 540 - 543
Dispersion of an acoustic polaron in a magnetic field V. N. GladilinA. A. Klyukanov Physics of Semiconductors and Dielectrics Pages: 543 - 547
Calculation of the linear parameters of a surface-helical instability in semiconductor plates G. F. KaravaevN. L. ChuprikovB. A. Uspenskii Physics of Semiconductors and Dielectrics Pages: 547 - 551
Amplitude of oscillations and the nonlinear frequency shift upon excitation of a surface-helical instability in semiconductor plates G. F. KarabaevN. L. ChuprikovB. A. Espenskii Physics of Semiconductors and Dielectrics Pages: 551 - 554
Positron annihilation in GaAs crystals irradiated by high-current protons K. P. Aref'evV. S. LopatinA. D. Pogrebnyak Physics of Semiconductors and Dielectrics Pages: 555 - 558
Influence of annealing on the photosensitivity of low-resistance CdS single crystals V. T. MakV. S. Manzhara Physics of Semiconductors and Dielectrics Pages: 558 - 561
Effect of shortwave illumination on the properties of a metal-anode oxide film-indium antimonide structure V. N. DavydovE. A. Loskutova Physics of Semiconductors and Dielectrics Pages: 561 - 565
Dependence of the effective mass of a diamagnetic exciton on the magnetic field intensity and temperature of a semiconducting crystal N. V. TkachA. A. ZhinchenkoV. M. Nitsovich Physics of Semiconductors and Dielectrics Pages: 565 - 568
Measurement of the surface recombination rate and lifetime of charge carriers in semiconductors by a contactless microwave resonator method V. B. AkhmanaevYu. V. LisyukA. S. Petrov Physics of Semiconductors and Dielectrics Pages: 569 - 574
Formation of equilibrium twins in systems undergoing β-ω transformations A. I. PotekaevV. E. Egorushkin Solid State Physics Pages: 575 - 578
