1. Semiinsulating gallium arsenide for microwave electronics

   • M. G. Mil'vidskii
   • V. B. Osvenskii
   • I. N. Shershakova

   OriginalPaper Pages: 879 - 888

2. Nonequilibrium deep-center trapping in liquid epitaxy on gallium arsenide

   • Yu. B. Bolkhovityanov
   • A. F. Kravchenko
   • S. I. Chikichev

   OriginalPaper Pages: 889 - 898

3. Impurity trapping during gas-phase epitaxy on gallium arsenide

   • L. G. Lavrent'eva

   OriginalPaper Pages: 899 - 909

4. Electron structure of bulk centers in gallium arsenide

   • V. F. Masterov

   OriginalPaper Pages: 910 - 919

5. Deep centers in gallium arsenide associated with intrinsic structural defects

   • B. I. Boltaks
   • M. N. Kolotov
   • E. A. Skoryatina

   OriginalPaper Pages: 919 - 927

6. Gallium arsenide avalanche s-diodes

   • S. S. Khludkov

   OriginalPaper Pages: 928 - 937

7. Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron

   • V. I. Gaman

   OriginalPaper Pages: 938 - 951

8. Defects in Schottky barrier structures

   • A. P. Vyatkin
   • N. K. Maksimova

   OriginalPaper Pages: 952 - 963