Nature and singularities in the behavior of point defects in doped single crystals of A3B5 compounds V. T. BublikM. G. Mil'vidskiiV. B. Osvenskii OriginalPaper Pages: 1 - 13
Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy L. G. Lavrent'eva OriginalPaper Pages: 13 - 24
Structure, electron states, and electrophysical properties of gallium arsenide surfaces N. L. Dmitruk OriginalPaper Pages: 24 - 35
Study of gallium arsenide deep centers by capacitance spectroscopy A. F. KravchenkoV. Ya. Prints OriginalPaper Pages: 35 - 44