Information aspects of “which-path” interference experiments with microparticles Yu. I. BogdanovK. A. ValievA. K. Gavrichenko Quantum Information Science 21 July 2010 Pages: 221 - 242
Simulation of properties of the channels of silicon MOS transistors on the deforming germanium substrate V. V. FilippovB. K. Petrov Micro- and Nanoelectronic Device 21 July 2010 Pages: 243 - 251
A system for precision reactive ion-beam etching of nanostructures for field-emission devices Yu. P. MaishevYu. P. Terent’evV. A. Golikov Manufacturing Processes and Equipment 21 July 2010 Pages: 252 - 261
Low-temperature pulsed CVD of thin layers of metallic ruthenium for microelectronics and nanoelectronics. Part 3: Nucleation phenomena during the growth of ruthenium layers V. Yu. Vasilyev Manufacturing Processes and Equipment 21 July 2010 Pages: 262 - 272
Formation and properties of thin-film composites vanadium oxide/porous anodic aluminum oxide E. A. OutkinaA. I. VorobyovaA. A. Khodin Thin Films 21 July 2010 Pages: 273 - 280
Specific features of constructional optimization of the parameters of CMOS memory devices V. V. Shubin Circuit Analysis and Synthesis 21 July 2010 Pages: 281 - 287
Determination of the delay of a programmable logic array N. A. AvdeevP. N. Bibilo Circuit Analysis and Synthesis 21 July 2010 Pages: 288 - 298