1. Creation and Development of the Ion Beam Technology

   • Yu. P. Maishev

   OriginalPaper 14 January 2020 Pages: 347 - 363

   

2. Parameters of Plasma and Way of Etching Silicon in a CF₄ + CHF₃ + O₂ Mixture

   • A. M. Efremov
   • D. B. Murin
   • K.-H. Kwon

   OriginalPaper 14 January 2020 Pages: 364 - 372

   

3. Simulation of the Effect of the Grain Boundary Structure on Effective Ionic Charges in the Processes of Electromigration

   • T. M. Makhviladze
   • M. E. Sarychev

   OriginalPaper 14 January 2020 Pages: 373 - 380

   

4. Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements

   • V. Ya. Stenin
   • Yu. V. Katunin

   OriginalPaper 14 January 2020 Pages: 381 - 393

   

5. Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region

   • N. V. Masal’skii

   OriginalPaper 14 January 2020 Pages: 394 - 401

   

6. Effect of the Pressure of Oxygen on the Plasma Oxidation of the Titanium Nitride Surface

   • V. M. Mordvintsev
   • V. V. Naumov
   • S. G. Simakin

   OriginalPaper 14 January 2020 Pages: 402 - 408

   

7. Estimating the Electric Mode Effect (Active and Passive) on the Dose of Radiation Resistance of Microcircuits

   • O. A. Kalashnikov

   OriginalPaper 14 January 2020 Pages: 409 - 414

   

8. Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

   • M. E. Chernyak
   • E. V. Ranneva
   • D. O. Titovets

   OriginalPaper 14 January 2020 Pages: 415 - 421

   

9. Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields

   • S. M. Asadov
   • S. N. Mustafaeva
   • V. F. Lukichev

   OriginalPaper 14 January 2020 Pages: 422 - 427

   

10. A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer

    • W. Filali
    • E. Garoudja
    • M. Henini

    OriginalPaper 14 January 2020 Pages: 428 - 434