1. The hyperfine energy spectrum of³¹P donors in a silicon NMR quantum computer

   • K. A. Valiev
   • A. A. Kokin
   • L. E. Fedichkin

   OriginalPaper Pages: 285 - 293

2. Formation of local insulating regions in Si/Si—Ge structures by ion implantation with subsequent stain etching

   • V. V. Starkov
   • E. A. Starostina
   • Yu. B. Gorbatov

   OriginalPaper Pages: 294 - 298

3. Frequency-response equalization in integrated current amplifiers with collector—base cross coupling

   • V. G. Prokopenko

   OriginalPaper Pages: 299 - 302

4. Performance improvement of CCD image sensor arrays

   • V. A. Arutyunov
   • O. V. Sorokin

   OriginalPaper Pages: 303 - 306

5. Charge transfer and structural—impurity complexes in the transition layer of the Si/SiO₂ system

   • G. Ya. Krasnikov
   • N. A. Zaitsev
   • I. V. Matyushkin

   OriginalPaper Pages: 307 - 310

6. Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching

   • I. I. Amirov
   • V. A. Fedorov

   OriginalPaper Pages: 311 - 315

7. The energy of activation of electromigration in aluminum conductors tested by the drift-velocity method

   • O. V. Kononenko
   • V. N. Matveev
   • D. P. Field

   OriginalPaper Pages: 316 - 323

8. Low-temperature annealing of SIMOX structures in an inhomogeneous temperature field

   • V. I. Rudakov
   • Yu. I. Denisenko
   • B. V. Mochalov

   OriginalPaper Pages: 324 - 330

9. An adsorption ellipsometric method for studying porous films and coatings

   • V. A. Tolmachev

   OriginalPaper Pages: 331 - 344

10. Discrete electron states at the Si(100)/SiO₂ interface

    • S. I. Kirillova
    • V. E. Primachenko
    • V. A. Chernobai

    OriginalPaper Pages: 345 - 348

11. Chip training conditions

    • M. I. Gorlov
    • P. Yu. Kovalenko

    OriginalPaper Pages: 349 - 353