Volume 6, Issue 3 | Plasma Chemistry and Plasma Processing

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Volume 6, Issue 3

September 1986

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8 articles in this issue

Etching of metals by means of organic radicals
Christa Haag
Harald Suhr
OriginalPaper Pages: 197 - 203
A model of the chemical processes occurring in CF₄/O₂ discharges used in plasma etching
I. C. Plumb
K. R. Ryan
OriginalPaper Pages: 205 - 230
A model for the etching of Si in CF₄ plasmas: Comparison with experimental measurements
K. R. Ryan
I. C. Plumb
OriginalPaper Pages: 231 - 246
Gas-phase reactions of SF₅, SF₂, and SOF with O(³ P): Their significance in plasma processing
I. C. Plumb
K. R. Ryan
OriginalPaper Pages: 247 - 258
Ozone synthesis in charged particle induced noble gas-oxygen and noble gas-oxygen-sulfur hexafluoride discharges
H. E. Elsayed-Ali
G. H. Miley
OriginalPaper Pages: 259 - 280
Knudsen effect on plasma-particle mass transfer. I. Formulation and application to self-diffusion
Shrikant V. Joshi
Jin Y. Park
L. S. Richardson
OriginalPaper Pages: 281 - 298
Plasma contamination with electrode metal vapor jets
Z. Kołacinski
OriginalPaper Pages: 299 - 310
Announcement

Announcement Pages: 311 - 311