Silicon-germanium heterostructures — advanced materials and devices for silicon technology T. E. WhallE. H. C. Parker Review Pages: 249 - 264
Misfit dislocation injection, interfacial stability and photonic properties of Si-Ge strained layers D. C. HoughtonJ.-M. BaribeauN. L. Rowell Papers Pages: 280 - 291
Strain and relaxation in Si-MBE structures studied by reciprocal space mapping using high resolution X-ray diffraction G. V. HanssonH. H. RadamssonWei-Xin Ni Papers Pages: 292 - 297
SiGe band engineering for MOS, CMOS and quantum effect devices K. L. WangS. G. ThomasM. O. Tanner Papers Pages: 311 - 324
Characterization of SiGe quantum-well p-channel MOSFETs J.-O. WeidnerK. R. HofmannL. Risch Papers Pages: 325 - 329
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy J. M. FernándezA. MatsumuraT. J. Thornton Papers Pages: 330 - 335
Silicon nanoelectronic devices with delta-doped layers F. WittmannH. GossnerI. Eisele Papers Pages: 336 - 340
Numerical simulation of the temperature dependence of photoluminescence in strained-Si1−xGex/Si heterostructures A. St. AmourJ. C. Sturm Papers Pages: 350 - 355
Optical properties of Si-Si1−xGex and Si-Ge nanostructures Y. S. TangC. M. Sotomayor TorresH. Kibbel Papers Pages: 356 - 362
Si1−XGeX/Si quantum well infrared photodetectors D. J. RobbinsM. B. StanawayC. Pickering Papers Pages: 363 - 367
