Volume 19, Issue 2

Search all Journal of Materials Science: Materials in Electronics articles

February 2008

Special Issue: Papers from the 6th International Conference on Materials for Microelectronics and Nanoengineering (MFMN2006) Guest Editor: Patrick McNally

23 articles in this issue

Editorial
Patrick McNally
Editorial 03 July 2007 Pages: 97 - 97
Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation
Francis Olabanji Lucas
A. Mitra
D. C. Cameron
OriginalPaper 05 June 2007 Pages: 99 - 101
Electrical studies on sputtered CuCl thin films
Gomathi Natarajan
R. T. Rajendra Kumar
P. J. McNally
OriginalPaper 05 June 2007 Pages: 103 - 106
Non-equilibrium Green’s function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure
Helmy Fitriawan
Matsuto Ogawa
Tanroku Miyoshi
OriginalPaper 09 June 2007 Pages: 107 - 110
Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in Si
M. Morooka
OriginalPaper 15 June 2007 Pages: 111 - 114
In-line characterization of dielectric constant and leakage currents of low-k films with corona charge method
D. Fossati
C. Beitia
J.-C. Royer
OriginalPaper 19 June 2007 Pages: 115 - 118
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates
D. W. McNeill
S. Bhattacharya
H. S. Gamble
OriginalPaper 06 July 2007 Pages: 119 - 123
Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition
Y. Matsui
Y. Miyoshi
OriginalPaper 05 June 2007 Pages: 125 - 130
Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy
Hiroyuki Usui
Hidehiro Yasuda
Hirotaro Mori
OriginalPaper 08 June 2007 Pages: 131 - 135
In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
O. Reentilä
A. Lankinen
P. J. McNally
OriginalPaper 28 June 2007 Pages: 137 - 142
Dislocations at the interface between sapphire and GaN
A. Lankinen
T. Lang
R. Simon
OriginalPaper 27 June 2007 Pages: 143 - 148
Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy
A. Säynätjoki
A. Lankinen
L. Fedorov
OriginalPaper 28 June 2007 Pages: 149 - 154
UV Raman spectroscopy of group IV nanocrystals embedded in a SiO₂ matrix
A. C. Prieto
A. Torres
T. Rodríguez
OriginalPaper 23 June 2007 Pages: 155 - 159
Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients
K. Hayama
K. Takakura
C. Claeys
OriginalPaper 05 June 2007 Pages: 161 - 165
Optical property and crystalline quarity of Si and Ge added β-Ga₂O₃ thin films
K. Takakura
T. Kudou
M. Shibuya
OriginalPaper 15 June 2007 Pages: 167 - 170
Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation
H. Ohyama
H. Shitogiden
C. Claeys
OriginalPaper 05 June 2007 Pages: 171 - 173
Degradation of SiC-MESFETs by irradiation
H. Ohyama
K. Takakura
C. Claeys
OriginalPaper 18 July 2007 Pages: 175 - 178
Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition
P. Iamraksa
N. S. Lloyd
D. M. Bagnall
OriginalPaper 05 June 2007 Pages: 179 - 182
Double-polysilicon self-aligned lateral bipolar transistors
P. Pengpad
D. M. Bagnall
OriginalPaper 08 June 2007 Pages: 183 - 187
High temperature assessment of nitride-based devices
R. Cuerdo
J. Pedrós
F. Calle
OriginalPaper 12 July 2007 Pages: 189 - 193
GaN based high temperature strain gauges
V. Tilak
J. Jiang
A. Knobloch
OriginalPaper 19 June 2007 Pages: 195 - 198
Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence
K. Yoshino
M. Yoneta
I. Yonenaga
OriginalPaper 29 June 2007 Pages: 199 - 201
Structural, optical and electrical characterization of undoped ZnMgO film grown by spray pyrolysis method
K. Yoshino
S. Oyama
M. Yoneta
OriginalPaper 15 June 2007 Pages: 203 - 209

Volume 19, Issue 2

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